M. Alyari, R. Bradford, M. Campanella, P. Camporeale, R. Demina, J. Everts, Z. Gecse, R. Halenza, U. Heintz, S. Holland, S. Hong, S. Korjenevski, A. Lampis, R. … 展开作者
M. Alyari, R. Bradford, M. Campanella, P. Camporeale, R. Demina, J. Everts, Z. Gecse, R. Halenza, U. Heintz, S. Holland, S. Hong, S. Korjenevski, A. Lampis, R. Lipton, R. Patti, J. Segal, K. W. Shin
Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to $\> 200\ m^2$ for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than $200\ m^2$ of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than $600\ m^2$. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on $200 mm$ wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.
Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple semiconductor wafers without any additional material at the bonding interface. In the context of particle pixel detectors this might provide an alternative to bump-bonding for joining sensors to readout chips. Previous investigations have shown that the amorphous layer formed at the interface during bonding is detrimental to charge propagation. To investigate the influence of the bonding interface on signal collection we have fabricated custom test structures by bonding high-resistivity N to high-resistivity …
Biosensors exploiting long-range surface plasmon polariton (LRSPP) waveguides comprised of Au stripes embedded in Cytop with integrated and encapsulated microfluidic channels are fabricated and demonstrated. A fabrication approach was devised where the lower cladding and recessed Au stripes are fabricated on a Si substrate, and the upper cladding and microfluidic channels are fabricated on a glass substrate, followed by wafer bonding to assemble the wafers into complete structures. The bond is centered over the full length of the optical path, yet no evidence of optical scattering or excess lo…
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation t…
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. The moderate gain of these sensors, together with the relatively thin active region, provide precise time information for minimum ionizing particles. To mitigate the effect of pile-up at the HL-LHC the ATLAS and CMS experiments have chosen the LGAD technology for the High Granularity Timing Detector (HGTD) and for t…
We report a gas flow driven voltage generation of Octyltrichlorosilane (OTS) molecules self assembled on silicon wafers (Si wafers). OTS Self assembled Monolayer (SAM) has been coated on both p-type and n-type doped silicon wafers (p-Si and n-Si wafers) using dip coating method. We have measured the flow induced voltage generation on OTS SAM coated Si wafers/ Uncoated Si wafers at modest gas flow velocities of subsonic regime (Mach number < 0.2) using national instruments NI-PXI-1044 Workstation. The gas flow driven voltage generation is mainly due to the interplay mechanisms of Bernoulli prin…
The high integration density of MAPS, with silicon sensor and readout electronics implemented in the same device, allows very thin structures with a greatly reduced material budget. Thicknesses of $\mathcal{O}$(50~$μ$m), values at which silicon chips become flexible, are readily used in many applications. In addition, MAPS can be produced in sensors of wafer size by a process known as stitching. This in turn allows to build detector elements that are large enough to cover full tracker half-layers with single bent sensors. The ALICE ITS~3 project is planning to build a new vertex tracker based …
Temperature dependence of the long-term annealing behavior of neutron irradiated diodes from 8-inch p-type silicon wafers
CERN（欧洲核子研究组织）；Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院）；Heidelberg University（海德堡大学）；Uppsala University（乌普萨拉大学）；Al-Farabi Kazakh National University（阿尔法拉比哈萨克国立大学）；An Najah National University（安纳贾赫国立大学）；HAN University of Applied Sciences（汉应用科学大学）
Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the progress of the fabrication of these microtraps designed for antimatter storage such as positrons. The fabrication of large length to radius aspect ratio (1000:1) microtrap arrays involved advanced techniques including photolithography, deep reactive ion etching (DRIE) of silicon wafers to achieve through-vias, gold sputtering of the wafers on the surfaces an…
This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we have fine-tuned various process parameters in order to produce sensors with the desired specifications.
Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC
University of Science and Technology of China（中国科学技术大学）；Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS)（中国科学院苏州纳米技术与纳米仿生研究所）；State Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences（中国科学院集成工艺国家重点实验室）
Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor response, largely due to high reflection from the illuminated device surface. We demonstrate here a method to increase the sensitivity of Ge sensors by implementing nanostructures to the wafer surfaces. The absorbance of nanostructured Ge wafers is measured to be >99 % in the whole UV-VIS-NIR spectrum up to 1600 nm wavelength, which is a significant improvement to…
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured fro…
The ATLAS Planar Pixel Sensor R&D Project is a collaboration of 17 institutes and more than 80 scientists. Their goal is to explore the operation of planar pixel sensors for the tracker upgrade at the High Luminosity-Large Hadron Collider (HL-LHC). This work will give a summary of the achievements on radiation studies with n-in-n and n-in-p pixel sensors, bump-bonded to ATLAS FE-I3 and FE-I4 readout chips. The summary includes results from tests with radioactive sources and tracking efficiencies extracted from test beam measurements. Analysis results of ${2\cdot10^{16}} \text{n}_{\text{eq}}\te…
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at w…
For the High-Luminosity phase of LHC, the ATLAS experiment is proposing the addition of a High Granularity Timing Detector (HGTD) in the forward region to mitigate the effects of the increased pile-up. The chosen detection technology is Low Gain Avalanche Detector (LGAD) silicon sensors that can provide an excellent timing resolution below 50 ps. The front-end read-out ASIC must maintain the performance of the sensor, while keeping low power consumption. This paper presents the results on the first prototype of a front-end ASIC, named ALTIROC0, which contains the analog stages (preamplifier an…
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
A Novel Approach for Fault Detection and Failure Analysis of CMOS Copper Metal Stacks
University of Oxford（牛津大学）；Massachusetts Institute of Technology（麻省理工学院）；European Organization for Nuclear Research (CERN)（欧洲核子研究组织（CERN））；Centre National de la Recherche Scientifique（法国国家科学研究中心）；Lund University（隆德大学）；Università degli studi di Cagliari（卡利亚里大学）；Istituto Nazionale di Fisica Nucleare (INFN)（意大利国家核物理研究所）
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 …
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about $1$ $\times$ $10^{16}$ $\text{n}_{\text{eq}}$ cm$^{-2}$ (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensor…
We describe technologies which can be developed to produce large area, low cost pixelated tracking detec- tors. These utilize wafer-scale 3D electronics and sensor technologies currently being developed in industry. This can result in fully active sensor/readout chip tiles which can be assembled into large area arrays with good yield and minimal dead area. The ability to connect though the bulk of the device can also provide better electrical performance and lower mass.
After the successful installation and first operation of the upgraded Inner Tracking System (ITS2), which consists of about $10\,$m$^2$ of monolithic silicon pixel sensors, ALICE is pioneering the usage of bent, wafer-scale pixel sensors for the ITS3 for LHC Run 4. Sensors larger than typical reticle sizes can be produced using the technique of stitching. At thicknesses of about $30\,μ$m, silicon is flexible enough to be bent to radii of the order of $1\,$cm. By cooling such sensors with a forced airflow, it becomes possible to construct truly cylindrical layers which consist practically only …
Between 2025 and 2027, some essential components of the CMS (Compact Muon Solenoid) detector - most notably the tracker and the calorimeter endcap - will be upgraded to prepare for HL-LHC (High Luminosity Large Hadron Collider) conditions. The upgraded CMS Outer Tracker and parts of the new CMS High Granularity Calorimeter (HGCAL) will encompass over $50{,}000$ new silicon sensors covering a total area of about $800\,\text{m}^{2}$. The sensor series production requires a dedicated strategy to monitor the quality and stability of the production process. The strategy is based on a test structure…
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is …
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate eff…
The installation of the High-Luminosity Large Hadron Collider (HL-LHC) presents unprecedented challenges to experiments like the Compact Muon Solenoid (CMS) in terms of event rate, integrated luminosity and therefore radiation exposures. To cope with this new environment, new detectors will be installed during the CMS Phase 2 Upgrade, including the replacement of the calorimeter endcaps with the "High Granularity Calorimeter" (HGCAL), which contains silicon sensors and scintillators as active elements. The silicon sensors will be produced in an 8" wafer process, which is new for high-energy ph…
SPT-3G is a polarization-sensitive receiver, installed on the South Pole Telescope, that measures the anisotropy of the cosmic microwave background (CMB) from degree to arcminute scales. The receiver consists of ten 150~mm-diameter detector wafers, containing a total of 16,000 transition-edge sensor (TES) bolometers observing at 95, 150, and 220 GHz. During the 2018-2019 austral summer, one of these detector wafers was replaced by a new wafer fabricated with Al-Mn TESs instead of the Ti/Au design originally deployed for SPT-3G. We present the results of in-lab characterization and on-sky perfo…
A high-resolution beam telescope is one of the most important and demanding infrastructure components at any test beam facility. Its main purpose is to provide reference particle tracks from the incoming test beam particles to the test beam users, which allows measurement of the performance of the device-under-test (DUT). \LYCORIS, a six-plane compact beam telescope with an active area of $\sim$10$\times$\SI{10}{\square\centi\metre} (extensible to 10$\times$\SI{20}{\square\centi\metre}) was installed at the \DIITBF in 2019, to provide a precise momentum measurement in a \SI{1}{\tesla} solenoid…
We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readout mode, in which all the pixels are read out serially. Previous studies have clarified that the problem is caused by the cross-talks between buried P-wells (BPW) in the sensor layer and in-pixel circu…
Engineering of titanium transition edge sensor wafers for the BA4-90/150 receiver of BICEP Array
California Institute of Technology（加州理工学院）；Cardiff University（卡迪夫大学）；Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；University of British Columbia（不列颠哥伦比亚大学）；Center for Astrophysics, Harvard & Smithsonian（哈佛-史密松尼天体物理中心）；University of Cincinnati（辛辛那提大学）；Jet Propulsion Laboratory, California Institute of Technology（加州理工学院喷气推进实验室）；University of Chicago（芝加哥大学）；National Institute of Standards and Technology（美国国家标准与技术研究院）；Argonne National Laboratory（阿贡国家实验室）；University of Minnesota（明尼苏达大学）；Commissariat a l’Energie Atomique（法国原子能和替代能源委员会）；Harvard University（哈佛大学）；University of Illinois at Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）；University of Cambridge（剑桥大学）
We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.
The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip track…
Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and energy simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by timewalk. In this paper, a method for pixel-by-pixel calibration of the time response is presented. Assemblies of Timepix3 ASICs bump-bonded to thin planar silicon pixel sensors of different thicknesses between 50 um and 150 um are calibrated and characterised in particle beams. For minimum ionising particles, time resolutions down to 0.72 $\pm$ 0.04 ns are achi…
During the high-luminosity phase of the LHC (HL-LHC), planned to start around 2027, the accelerator is expected to deliver an instantaneous peak luminosity of up to $7.5\times10^{34}$ cm$^{-2}$s$^{-1}$. A total integrated luminosity of $3000$ or even $4000$~fb$^{-1}$ is foreseen to be delivered to the general purpose detectors ATLAS and CMS over a decade, thereby increasing the discovery potential of the LHC experiments significantly. The CMS detector will undergo a major upgrade for the HL-LHC, with entirely new tracking detectors consisting of an Outer Tracker and Inner Tracker. However, the…
Characterization of p-stop isolation implants in silicon sensors using MOSFET structures
Marietta Blau Institute for Particle Physics, Austrian Academy of Sciences（马里埃塔·布劳粒子物理研究所，奥地利科学院）；National Technical University of Athens（雅典国立技术大学）；European Organization for Nuclear Research CERN（欧洲核子研究组织（CERN））
研究用 MOSFET 测试结构表征 p 型硅传感器中 p-stop 隔离注入，通过测量器件转移特性提取相关参数，提出重建掺杂分布方法，评估其对不同 p-stop 几何形状和掺杂浓度的灵敏度，证明该结构可作无损诊断监测相关特性。
The depleted CMOS sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Its capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detec…
This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two …
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in full-depletion mode have been studied. The pixel sensors were fabricated on 4-inch, N type, 320μm thick, high-resistivity silicon wafers. The pixel sensors has a p+-in-n structure with varies of pixel size and gap size including guard-ring structures. Later, the pixel sensor was wire bonded to the ASIC circuits and tested for the performance of X-ray response in the sy…
We report on the development of a 10B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed titanium-boron-nickel multilayer film was deposited on silicon using a microwave plasma-assisted co-sputtering method (first, for test purpose, on silicon wafers, then directly on the surface of a CCD sensor). The obtained sensor was then tested using both cold and ultra-cold neutrons.
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\ti…
We report on Ge coated silicon nanowires (SiNWs) sensors synthesized with metal assisted chemical etching and qualify their functionality as human respiratory sensor. The sensors were made from p-type single-crystalline (100) silicon wafers using a silver catalysed top-down etching, afterwards coated by 50 nm Ge thin layer using a magnetron sputtering. The Ge post-treatment were performed by rapid thermal annealing (RTA) at 450 and 700 C degrees. The sensors were characterized by X-ray diffraction diffractogram and scanning electron microscopy. It is demonstrated that the sensors are highly se…
