Ge coated silicon nanowires as human respiratory sensing device

英文摘要：

We report on Ge coated silicon nanowires (SiNWs) sensors synthesized with metal assisted chemical etching and qualify their functionality as human respiratory sensor. The sensors were made from p-type single-crystalline (100) silicon wafers using a silver catalysed top-down etching, afterwards coated by 50 nm Ge thin layer using a magnetron sputtering. The Ge post-treatment were performed by rapid thermal annealing (RTA) at 450 and 700 C degrees. The sensors were characterized by X-ray diffraction diffractogram and scanning electron microscopy. It is demonstrated that the sensors are highly sensitive as human breath detectors, with rapid response and frequency detect-ability. They are also shown to be a good candidate for human respiratory diseases diagnoses.