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arXiv 1902.092322019-02physics.ins-det

Boron-10 conversion layer for ultra-cold neutron detection

Benoit Clement, Alexandre Bes, Ana Lacoste, Rodolphe Combe, Valery V. Nesvizhevsky, Guillaume Pignol, Dominique Rebreyend, Yinghao Xi

备注：: 12 pages
DOI：: 10.1088/1748-0221/14/09/P09003

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We report on the development of a 10B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed titanium-boron-nickel multilayer film was deposited on silicon using a microwave plasma-assisted co-sputtering method (first, for test purpose, on silicon wafers, then directly on the surface of a CCD sensor). The obtained sensor was then tested using both cold and ultra-cold neutrons.

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