Mapping the depleted area of silicon diodes using a micro-focused X-ray beam
Luise Poley, Andrew Blue, Ingo Bloch, Craig Buttar, Vitaliy Fadeyev, Javier Fernandez-Tejero, Celeste Fleta, Johannes Hacker, Carlos Lacasta Llacer, Mercedes Mi… 展开作者
Luise Poley, Andrew Blue, Ingo Bloch, Craig Buttar, Vitaliy Fadeyev, Javier Fernandez-Tejero, Celeste Fleta, Johannes Hacker, Carlos Lacasta Llacer, Mercedes Miñano, Martin Renzmann, Edoardo Rossi, Craig Sawyer, Dennis Sperlich, Martin Stegler, Miguel Ullán, Yoshinobu Unno
发表信息：
Journal of Instrumentation, Volume 14, published March 2019
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge.
Test-beam results from MiniCACTUS-v2: A depleted monolithic CMOS timing sensor prototype
Institute for High Energy Physiscs (IFAE) Campus Autonomous University of Barcelona (UAB)（巴塞罗那自治大学高能物理研究所）；Autonomous University of Barcelona (UAB)（巴塞罗那自治大学）；Catalan Institution for Research and Advanced Studies (ICREA)（加泰罗尼亚研究与高级研究学院）；University of Liverpool（利物浦大学）
An active Transverse Energy Filter based on microstructured Si-PIN diodes with an angular-selective detection efficiency
University of Münster（明斯特大学）；Istituto Nazionale di Fisica Nucleare (INFN) – Sezione di Milano-Bicocca（意大利国家核物理研究所（INFN）米兰-比科卡分部）；Kirchhoff-Institute for Physics, University of Heidelberg（海德堡大学基希霍夫物理研究所）
