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arXiv 1606.09413physics.ins-detnucl-ex
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硅条中的负非线性磁电阻效应

Negative and nonlinear magnetoresistance effect in silicon strip

Fangcong Wang, Haixia Li, Hui Guo, Xiaolong Fan, Zhankui Li

摘要:

在室温条件下,在不同方向施加高磁场强度时,硅条核辐射探测器中既有负磁阻,又有非线性磁阻。这一结果与以往的报道不同。我们认为这是高电场(耿氏效应)和高磁场共同作用的结果,或者是由于载流子数和载流子迁移率的变化。弱局域化和朗道能级也影响磁电阻。不同的晶体取向具有不同的能带结构。复杂的能带结构导致复杂的载流子迁移率加上朗道能级。因此,磁阻效应是各向异性的。

英文摘要:

Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with former report. We believe this is the result of coaction of high electric field (Gunn effect) and high magnetic field, or because of the variation of number of carriers and the carriers mobility. The weak localization and Landau energy levels also affect the magnetoresistance. Different crystal orientations have different energy band structures. Complex band structures lead complex carriers mobility plus Landau energy levels. So the magnetoresisitance effect is anisotropy.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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