p+ n型硅带传感器中Si-SiO2界面积累层和电荷损耗的研究
Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
摘要：
用多道瞬态电流技术测量了波长为660 nm的亚纳秒激光聚焦在p+n硅条传感器的Si-SiO_2界面附近产生的电子-空穴对的感应电流，并确定了电荷收集效率。激光器以脉冲串模式运行，脉冲串通常间隔1 ms，每个脉冲串由30个脉冲组成，间隔50 ns。在以前的论文中，据报道，根据X射线辐射损伤，偏置历史和湿度，没有电荷损失的情况下，与空穴损失，并与电子损失已被观察到。在本文中，我们显示的传感器之前和之后，由X射线照射到1兆戈瑞（二氧化硅），电荷损失如何变化与每个激光脉冲产生的电子-空穴对的数量，以及激光脉冲之间的时间间隔。这允许我们估计在Si-SiO2界面处的累积层中有多少额外的电荷必须被捕获以显著改变局部电场，以及累积层和电场返回到稳态情况所花费的时间。此外，结果上的变化所造成的等离子体效应的高电荷密度沉积接近Si-SiO2界面的脉冲形状。
英文摘要：
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-SiO2 interface of p+n silicon strip sensors have been measured, and the charge-collection efficiency determined. The laser has been operated in burst mode, with bursts typically spaced by 1 ms, each consisting of 30 pulses separated by 50 ns. In a previous paper it has been reported that, depending on X-ray-radiation damage, biasing history and humidity, situations without charge losses, with hole losses, and with electron losses have been observed. In this paper we show for sensors before and after irradiation by X-rays to 1 MGy (SiO2), how the charge losses change with the number of electron-hole pairs generated by each laser pulse, and the time interval between the laser pulses. This allows us to estimate how many additional charges in the accumulation layers at the Si-SiO2 interface have to be trapped to significantly change the local electric field, as well as the time it takes that the accumulation layer and the electric field return to the steady-state situation. In addition, results are presented on the change of the pulse shape caused by the plasma effect for high charge densities deposited close to the Si-SiO2 interface.
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