用于SiD探测器的p-喷雾/p-停止注入硅传感器性能研究
Performance Studies of the p-spray/p-stop implanted Si Sensors for the SiD Detector
摘要：
硅探测器（SiD）是未来$e^+e^-$直线对撞机（如国际直线对撞机（ILC））的探测器之一。ILC的中子背景估计约为1 - 1.6 × 1010 1-MeV当量中子cm-2年-1的硅微带传感器中使用的最内顶点探测器。p+n-n+双面硅条传感器可作为SiD的位置敏感传感器。在这些传感器的$n^+n^-$侧，由于电子积累而导致的短路导致信号在所有n+条上均匀分布。因此，带间隔离成为主要的技术挑战之一。实现带间隔离的有吸引力的方法之一是在硅表面上使用均匀的p型注入（p喷雾）。另一种替代方案是使用围绕n-带（p-停止）的浮置p-型注入。然而，高电场在边缘的p-喷雾/p-停止已被证明诱导预击穿微放电。需要对p-喷雾和p-停止的注入剂量分布进行优化，以实现良好的电隔离，同时确保Si传感器的令人满意的击穿性能。在目前的工作中，我们报告的初步结果进行模拟研究的$n^+n^-$硅传感器，配备了p-喷雾和p-停止，使用SILVACO工具。
英文摘要：
Silicon Detector (SiD) is one of the proposed detector for future $e^+e^-$ Linear colliders, like International Linear Collider (ILC). The estimated neutron background for ILC is around 1 - 1.6 x 1010 1-MeV equivalent neutrons cm-2 year-1 for the Si micro strip sensors to be used in the innermost vertex detector. The p+n-n+ double-sided Si strip sensors are supposed to be used as position sensitive sensors for SiD. On the $n^+n^-$ side of these sensors, shorting due to electron accumulation leads to uniform spreading of signal over all the n+ strips. Hence inter-strip isolation becomes one of the major technological challenges. One of the attractive methods to achieve the inter-strip isolation is the use of uniform p-type implant on the silicon surface (p-spray). Another alternative is the use of floating p-type implants that surround the n-strips (p-stop). However, the high electric fields at the edge of the p-spray/p-stop have been shown to induce pre-breakdown micro-discharge. An optimization of the implant dose profile of the p-spray and p-stop is required to achieve good electrical isolation while ensuring satisfactory breakdown performance of the Si sensors. In the present work, we report the preliminary results of simulation study performed on the $n^+n^-$ Si sensors, equipped with p-spray and p-stops, using SILVACO tools.
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