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arXiv 2309.00534physics.plasm-ph
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面向半导体的等离子体电子表面散射核

Electron surface scattering kernel for a plasma facing a semiconductor

F. X. Bronold, F. Willert

AI总结:

本文基于不变嵌入原理构建电子表面散射核,用于面向半导体(如硅、锗)的等离子体玻尔兹曼方程边界条件,考虑微观物理机制,所得发射产额与实验吻合。

摘要:

利用电子背散射函数的不变嵌入原理,我们提出了一种构建电子表面散射核的方案,该散射核用于面向半导体固体的等离子体电子玻尔兹曼方程的边界条件。该方案在randium-jellium模型框架内考虑了固体中负责界面电子发射和背散射的微观物理机制,并且同样适用于介电体和金属。作为示例,我们考虑了硅和锗,通过肖特基势垒描述界面势,并包含了跨越能隙的碰撞电离以及声子和离子实散射。由该散射核推导出的发射产额与实测数据吻合良好,足以支持其在面向硅或锗的等离子体电子边界条件中的应用。

英文摘要:

Employing the invariant embedding principle for the electron backscattering function, we present a scheme for constructing an electron surface scattering kernel to be used in the boundary condition for the electron Boltzmann equation of a plasma facing a semiconducting solid. The scheme takes the solid's microphysics responsible for electron emission and backscattering from the interface within a randium-jellium model into account and is applicable to dielectrics and metals as well. As an illustration, we consider silicon and germanium, describing the interface potential by a Schottky barrier and including impact ionization across the energy gap as well as scattering on phonons and ion cores. The emission yields deduced from the kernel agree well enough with measured data to support its use in the electron boundary condition of a plasma facing silicon or germanium.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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