杂质半导体电离产生局域等离子体波
Creating localized plasma wave by ionization of doped semiconductors
摘要：
局域等离子体波可以通过突然电离具有空间周期性掺杂剂密度的非本征半导体来产生。在冶金结处的内置静电势与电子密度波纹相结合，提供了在电离时激发持久等离子体波的确切初始条件。这种方法可以产生频率在几太赫兹到亚太赫兹之间的等离子体波，而没有实质性的阻尼。滞留的等离子体波可以种子后向拉曼放大在很宽的范围内的共振频率，直到极紫外区。啁啾波矢量和弯曲的波前允许在纵向和横向维度上聚焦放大的光束。这种方法的主要限制似乎是从固态材料获得足够低的等离子体密度，以避免碰撞阻尼。
英文摘要：
Localized plasma waves can be generated by suddenly ionizing extrinsic semiconductors with spatially periodic dopant densities. The built-in electrostatic potentials at the metallurgical junctions, combined with electron density ripples, offer the exact initial condition for exciting long-lasting plasma waves upon ionization. This method can create plasma waves with a frequency between a few terahertz to sub-petahertz without substantial damping. The lingering plasma waves can seed backward Raman amplification in a wide range of resonance frequencies up to the extreme ultraviolet regime. Chirped wavevectors and curved wavefronts allow focusing the amplified beam in both longitudinal and transverse dimensions. The main limitation to this method appears to be obtaining sufficiently low plasma density from solid-state materials to avoid collisional damping.
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