面向介质等离子体固体电子响应的动力学模拟
Kinetic modeling of the electronic response of a dielectric plasma-facing solid
摘要：
我们提出了一个面向等离子体的电介质固体的电子响应的自洽动力学理论。基于Poisson方程和两组空间分离的Boltzmann方程，一组用于等离子体中的电子和离子，另一组用于介质中的导带电子和价带空穴，该方法给出了由于等离子体中的电子和离子的永久流入而在界面处形成的双电层的准稳态密度和电势分布。这两套玻尔兹曼方程连接的量子力学匹配条件的电子分布函数和半经验模型的空穴注入模仿离子在表面的中和。动力学建模的关键是壁内的双极性，导致电子-空穴复合条件，以及双层与壁和等离子体内部深处的准中性无场区域的合并。为了表明该方法的可行性以及潜力，我们将其应用到无碰撞，完全吸收界面使用本征和非本征二氧化硅和硅表面接触的两个温度的氢等离子体作为一个例子。
英文摘要：
We present a self-consistent kinetic theory for the electronic response of a plasma-facing dielectric solid. Based on the Poisson equation and two sets of spatially separated Boltzmann equations, one for electrons and ions in the plasma and one for conduction band electrons and valence band holes in the dielectric, the approach gives the quasi-stationary density and potential profiles of the electric double layer forming at the interface due to the permanent influx of electrons and ions from the plasma. The two sets of Boltzmann equations are connected by quantum-mechanical matching conditions for the electron distribution functions and a semi-empirical model for hole injection mimicking the neutralization of ions at the surface. Essential for the kinetic modeling is the ambipolarity inside the wall, leading to an electron-hole recombination condition, and the merging of the double layer with the quasi-neutral, field-free regions deep inside the wall and the plasma. To indicate the feasibility as well as the potential of the approach we apply it to a collisionless, perfectly absorbing interface using intrinsic and extrinsic silicon dioxide and silicon surfaces in contact with a two-temperature hydrogen plasma as an example.
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