A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p-n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated. By comparing the Zener tunneling processes in these structures to traditional group IV and III-V semiconductors, it is proved that for identical bandgaps, carbon based 1D structures have higher tunneling probabilities. The high tunneling current magnitudes for 1D carbon structures suggest the distinct feasibility of high-performance tunneling-based field-effect transistors.
The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons, and from acoustic phonons are as important as line edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.
Graphene nanoribbons are the counterpart of carbon nanotubes in graphene-based nanoelectronics. We investigate the electronic properties of chemically modified ribbons by means of density functional theory. We observe that chemical modifications of zigzag ribbons can break the spin degeneracy. This promotes the onset of a semiconducting-metal transition, or of an half-semiconducting state, with the two spin channels having a different bandgap, or of a spin-polarized half-semiconducting state -where the spins in the valence and conduction bands are oppositely polarized. Edge functionalization o…
By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano-devices were obtained. The scattering properties were then used with an adaptation of the Landauer formalism to calculate an analytical expression for current and conductance. The numerical results of the IV characteristics were then briefly discussed for the graphene step and Zener barrier. A comparison between the theoretical model and experimental results shows the similarities of graphene nanoribbons and infinite sheet graphene.
Using the density functional theory, we have demonstrated the chemical functionalization of semiconducting graphene nanoribbons (GNRs) with Stone-Wales (SW) defects by carboxyl (COOH) groups. It is found that the geometrical structures and electronic properties of the GNRs changed significantly, and the electrical conductivity of the system could be considerably enhanced by mono-adsorption and double-adsorption of COOH, which sensitively depends upon the axial concentration of SW defects COOH pairs (SWDCPs). With the increase of the axial concentration of SWDCPs, the system would transform fro…
We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency of ~0.15 (Se/Ta=2.85) did not show any PL or TERS response. The confocal Raman spectra…
The electronic and magnetic properties of varying width, oxygen-functionalized armchair graphene nanoribbons (AGNRs) are investigated using first-principles density functional theory (DFT). Our study shows that O-passivation results in a rich geometrical environment which in turn determines the electronic and magnetic properties of the AGNR. For planar systems a degenerate magnetic ground state, arising from emptying of O lone-pair electrons, is reported. DFT predicts ribbons with ferromagnetic coupling to be metallic whereas antiferromagnetically coupled ribbons present three band gap familie…
We study analytically, based on the tight-binding model, the electronic band structure of armchair AA-stacked bilayer graphene nanoribbons (BLGNRs) in several regimes. We apply hard-wall boundary conditions to determine the discretion dominating on the Bloch wavefunctions in the confined direction. First we consider an ideal case, perfect nanoribbons without any edge deformation, and show that their electronic properties are strongly size-dependent. We find that the narrow armchair AA-stacked BLGNRs (similar to single-layer graphene nanoribbons) may be metallic or semiconducting depending on t…
Strain-enhanced edge ferromagnetism and bipolar magnetic semiconducting behavior in Janus graphene nanoribbons
School of Physics and Astronomy, and Key Laboratory of Multiscale Spin Physics (Ministry of Education), Beijing Normal University（北京师范大学物理与天文学院，多尺度自旋物理教育部重点实验室）；School of Physics and Electronics, Shandong Normal University（山东师范大学物理与电子科学学院）
Atomic and electronic structures of phosphorene nanoribbons are studied within density functional theory. These novel materials present different physical phenomena expected in two very different physical systems: one dimensional metallic chains and semiconductor surfaces. While `rugged' nanoribbons are semiconducting in their layer-terminnated structures, pure `linear' and `zigzag' nanoribbons are metallic due to metallic edge states. Linear nanoribbons undergo edge reconstruction and zigzag nanoribbons beyond a certain width undergo Peierls transition leading to opening of a band gap in the …
Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZGNRs and SiO2. These functional groups stabilize ZGNRs on substrate, as well as modify the edge states of ZGNRs and further affect their electronic properties. Band gaps are opened owing to edge states…
Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZGNRs and SiO2. These functional groups stabilize ZGNRs on substrate, as well as modify the edge states of ZGNRs and further affect their electronic properties. Band gaps are opened owing to edge states…
Nonlinear optical responses of semiconducting graphene nanoribbons: Strong constraint from a hidden symmetry
University of California at Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Eastern Institute of Technology（宁波东方理工大学）；National Center of Theoretical Sciences（台湾理论科学中心）；Institute of Atomic and Molecular Sciences, Academia Sinica（中央研究院原子与分子科学研究所）
Aligned graphene nanoribbon (GNR) arrays were made by unzipping of aligned single-walled and few-walled carbon nanotube (CNT) arrays. Nanotube unzipping was achieved by a polymer-protected Ar plasma etching method, and the resulting nanoribbon array was transferred onto any substrates. Atomic force microscope (AFM) imaging and Raman mapping on the same CNTs before and after unzipping confirmed that ~80% of CNTs were opened up to form single layer sub-10 nm GNRs. Electrical devices made from the GNRs (after annealing in H2 at high temperature) showed on/off current (Ion/Ioff) ratios up to 103 a…
Graphene nanoribbons (GNR) in mutually perpendicular electric and magnetic fields are shown to exhibit dramatic changes in their band structure and electron transport properties. A strong electric field across the ribbon induces multiple chiral Dirac points, closing the semiconducting gap in armchair GNR's. A perpendicular magnetic field induces partially formed Landau levels as well as dispersive surface-bound states. Each of the applied fields on its own preserves the even symmetry $E_{k} = E_{-k}$ of the subband dispersion. When applied together, they reverse the dispersion parity to be odd…
We have studied the adsorption of gas molecules (CO, NO, NO2, O2, N2, CO2, and NH3) on graphene nanoribbons (GNRs) using first principles methods. The adsorption geometries, adsorption energies, charge transfer, and electronic band structures are obtained. We find that the electronic and transport properties of the GNR with armchair-shaped edges are sensitive to the adsorption of NH3 and the system exhibits n type semiconducting behavior after NH3 adsorption. Other gas molecules have little effect on modifying the conductance of GNRs. Quantum transport calculations further indicate that NH3 mo…
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional met…
Graphene nanoribbons present diverse electronic properties ranging from semiconducting to half-metallic, depending on their geometry, dimensions and chemical composition. Here we present a route to control these properties via externally applied mechanical deformations. Using state-of-the-art density functional theory calculations combined with classical elasticity theory considerations, we find a remarkable Young's modulus value of ~7 TPa for ultra-narrow graphene strips and a pronounced electromechanical response towards bending and torsional deformations. Given the current advances in the s…
We report electronic structure and electric field modulation calculations in the width direction for armchair graphene nanoribbons (acGNRs) using a semi-empirical extended Huckel theory. Important band structure parameters are computed, e.g. effectives masses, velocities and bandgaps. For the three types of acGNRs, the pz orbital tight-binding parameters are extracted if feasible. Furthermore, the effect of electric field in the width direction on acGNRs dispersion is explored. It is shown that for the two types of semiconducting acGNRs, an external electric field can reduce the bandgap to a f…
Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons (AGNRB) on their widths, interlayer distance (D) and edge doping concentration of boron/nitrogen is investigated using local density approximation and compare to the results of monolayer graphene nanoribbons (AGNRM). Although Eg of AGNRB, in general, is smaller than that of AGNRM, AGNRB exhibits two distinct groups, metal and semiconductor, while AGNRM displays purely semiconducting behavior. Eg of AGNRB, moreover, is highly sensitive to D, indicating a possible application in tuning Eg by varying D. Finally, edge dopin…
In this paper, we apply the first-principle theory to explore how the electronic structures of armchair graphene nanoribbons (AGNRs) are affected by chemical modifications. The edge addends include H, F, N, NH$_{2}$, and NO$_{2}$. Our theoretical results show that the energy gaps are highly tunable by controlling the widths of AGNRs and addends. The most interesting finding is that N-passivated AGNRs with various widths are metallic due to the unique electronic features of N-N bonds. This property change of AGNRs (from semiconducting to metallic) is important in developing graphene-based devic…
One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles method, we derived and proved a general edge (boundary) condition for the opening of a significant bandgap in ZGNRs with defective edge structures. The proposed semiconducting GNRs have some interesting properties including the one that they can be embedded and integrated in a large piece of graphene without the need of completely cutting them out. We also demons…
Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled. Here, we combine simple model Hamiltonians with extensive first-principles calculations to investigate the response of armchair graphene nanoribbons to transverse electric fields. Such fields can be achieved either upon laterally gating the nanoribbon or incorporating ambipolar chemical co-dopants along the edges. We reveal that the field induces a…
The edge reconstruction of zigzag graphene nanoribbons to a stable line of alternatively fused seven and five membered rings with hydrogen passivation has been studied within density functional theory with both localized and extended basis approximations. Reconstruction of both edges results in a nonmagnetic metallic ground state, whereas the one edge reconstruction stabilizes the system in a ferromagnetic metallic ground state. The reconstructed edge suppresses the local spin density of atoms and contributes finite density of states at Fermi energy. Our study paves a new way to fabricate the …
We perform first-principles calculations based on density functional theory to study quasi one-dimensional edge-passivated (with hydrogen) zigzag graphene nanoribbons (ZGNRs) of various widths with chemical dopants, boron and nitrogen, keeping the whole system isoelectronic. Gradual increase in doping concentration takes the system finally to zigzag boron nitride nanoribbons (ZBNNRs). Our study reveals that, for all doping concentrations the systems stabilize in anti-ferromagnetic ground states. Doping concentrations and dopant positions regulate the electronic structure of the nanoribbons, ex…
Armchair graphene nanoribbons are a highly promising class of semiconductors for all-carbon nanocircuitry. Here, we present a new perspective on their electronic structure from simple model Hamiltonians and $\textit{ab initio}$ calculations. We focus on a specific set of nanoribbons of width $n = 3p+2$, where $n$ is the number of carbon atoms across the nanoribbon axis and $p$ is a positive integer. We demonstrate that the energy-gap opening in these nanoribbons originates from the breaking of a previously unidentified hidden symmetry by long-ranged hopping of $π$-electrons and structural dist…
A form of an indirect Ruderman-Kittel-Kasuya-Yosida (RKKY)-like coupling between magnetic on-site impurities in armchair graphene nanoribbons is studied theoretically. The calculations are based on a tight-binding model for a finite nanoribbon system with periodic boundary conditions. A pronounced Friedel-oscillation-like dependence of the coupling magnitude on the impurity position within the nanoribbon resulting from quantum size effects is found and investigated. In particular, the distance dependence of coupling is analysed. For semiconducting nanoribbons, this dependence is exponential-li…
In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semicon…
The interaction between substitutional nitrogen atoms in graphene is studied by performing first principles calculations. The nearest neighbor interaction between nitrogen dopants is highly repulsive because of the strong electrostatic repulsion between nitrogen atoms, which prevents the full phase separation in nitrogen doped graphene. Interestingly, there are two relatively stable nitrogen-nitrogen pairs due to the anisotropy charge redistribution induced by nitrogen doping. We reveal two stable semiconducting ordered N doped graphene structures C3N and C12N through the cluster expansion tec…
In cove-edged zigzag graphene nanoribbons (ZGNR-C), one terminal CH group per length unit is removed on each zigzag edge, forming a regular pattern of coves which controls their electronic structure. Based on three structural parameters that unambiguously characterize the atomistic structure of ZGNR-C, we present a scheme that classifies their electronic state, i.e., if they are metallic, topological insulators or trivial semiconductors, for all possible widths N, unit lengths a and cove position offsets at both edges b, thus showing the direct structure-electronic structure relation. We furth…
We present a first-principles study of the migration and recombination of edge defects (carbon adatom and/or vacancy) and their influence on electrical conductance in zigzag graphene nanoribbons (ZGNRs). It is found that at room temperature, the adatom is quite mobile while the vacancy is almost immobile along the edge of ZGNRs. The recombination of an adatom-vacancy pair leads to a pentagon-heptagon ring defect structure having a lower energy than the perfect edge, implying that such an edge-defect can be formed spontaneously. This edge defect can suppresses the conductance of ZGNRs drastical…
Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurement…
This study of elastic and plastic deformation of graphene, silicene, and boron nitride (BN) honeycomb nanoribbons under uniaxial tension determines their elastic constants and reveals interesting features. In the course of stretching in the elastic range, the electronic and magnetic properties can be strongly modified. In particular, it is shown that the band gap of a specific armchair nanoribbon is closed under strain and highest valance and lowest conduction bands are linearized. This way, the massless Dirac fermion behavior can be attained even in a semiconducting nanoribbon. Under plastic …
The two-dimensional (2D) C3N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C3N via stacking or forming nanoribbon, bandgap modulation of bilayer C3N nanoribbons (C3NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C3N by cutting it into hydrogen passivated C3NNRs and stacking them into bilayer heterostruct…
The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned at nanometer length scales. Recent developments in bottom-up synthesis have enabled the design and characterization of atomically-precise GNRs, but strategies for realizing GNR metallicity have been elusive. Here we demonstrate a general technique for inducing metallicity in GNRs by inserting a symmetric superlattice of zero-energy modes into otherwise semico…
Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials carved from graphene lattice. GNRs possess high mobility and current carrying capability, sizable bandgap, and versatile electronic properties tailored by the orientations and open edge structures. These unique properties make GNRs promising candidates for prospective electronics applications including nano-sized field-effect transistors (FETs), spintronic devices, and quantum information processing. To fully exploit the potential of GNRs, fundamental understanding of structure-property relationship, precise control of …
Graphene nanoribbons (GNRs) are one-dimensional nanostructures predicted to display a rich variety of electronic behaviors. Depending on their structure, GNRs realize metallic and semiconducting electronic structures with band gaps that can be tuned across broad ranges. Certain GNRs also exhibit a peculiar gapped magnetic phase for which the half-metallic state can be induced as well as the topologically non-trivial quantum spin Hall electronic phase. Because their electronic properties are highly tunable, GNRs have quickly become a popular subject of research toward the design of graphene-bas…
Breaking Bipartite and Time Reversal Symmetries by Fusing Porphine Unit in-between two Zigzag-edge Graphene Nanoribbons
Sardar Vallabhbhai National Institute of Technology (SVNIT)（萨达尔·瓦拉巴伊国家理工学院）；Indian Institute of Science Education and Research (IISER) Tirupati（印度科学教育研究学院蒂鲁帕蒂分校）
We employ first-principles calculations based density-functional-theory (DFT) approach to study electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, electrons which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that the metallic behavior is observed for the fo…
Thermoelectric junctions are often made of components of different materials characterized by distinct transport properties. Single material junctions, with the same type of charge carriers, have also been considered to investigate various classical and quantum effects on the thermoelectric properties of nanostructured materials. We here introduce the concept of defect-induced thermoelectric voltage, namely, {\it thermodefect voltage}, in graphene nanoribbon (GNR) junctions under a temperature gradient. Our thermodefect junction is formed by two GNRs with identical properties except the existe…
The light-like dispersion of graphene monolayer results in many novel electronic properties in it1, however, this gapless feature also limits the applications of graphene monolayer in digital electronics2. A rare working solution to generate a moderate bandgap in graphene monolayer is to cut it into one-dimensional (1D) nanometre-wide ribbons3-13. Here we show that a wide bandgap can be created in a unique 1D strained structure, i.e., graphene-nanoribbon-like (GNR-like) structure, of a continuous graphene sheet via strong interaction between graphene and the metal substrate, instead of cutting…
Synthesis of Metal-Semiconductor Heterojunctions in Single Graphene Nanoribbons
University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory（加州大学伯克利分校与劳伦斯伯克利国家实验室卡弗里能源纳米科学研究所）；Department of Chemistry, Columbia University（哥伦比亚大学化学系）；Department of Physics, University of Illinois Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校物理系）；Department of Physics, Cornell University（康奈尔大学物理系）；Department of Materials Science and Nanoengineering, Rice University（莱斯大学材料科学与纳米工程系）
Spin-ordered electronic states in hydrogen-terminated zigzag nanographene give rise to magnetic quantum phenomena that have sparked renewed interest in carbon-based spintronics. Zigzag graphene nanoribbons (ZGNRs), quasi one-dimensional semiconducting strips of graphene featuring two parallel zigzag edges along the main axis of the ribbon, are predicted to host intrinsic electronic edge states that are ferromagnetically ordered along the edges of the ribbon and antiferromagnetically coupled across its width. Despite recent advances in the bottom-up synthesis of atomically-precise ZGNRs, their …
Graphene's isolation launched explorations of fundamental relativistic physics originating from the planar honeycomb lattice arrangement of the carbon atoms, and of potential technological applications in nanoscale electronics. Bottom-up fabricated atomically-precise segmented graphene nanoribbons, SGNRs, open avenues for studies of electrical transport, coherence, and interference effects in metallic, semiconducting, and mixed GNRs, with different edge terminations. Conceptual and practical understanding of electric transport through SGNRs is gained through nonequilibrium Green's function (NE…
Graphene nanoribbons (GNRs) are one-dimensional (1D) structures that exhibit a rich variety of electronic properties1-17. Therefore, they are predicted to be the building blocks in next-generation nanoelectronic devices. Theoretically, it has been demonstrated that armchair GNRs can be divided into three families, i.e., Na = 3p, Na = 3p + 1, and Na = 3p + 2 (here Na is the number of dimer lines across the ribbon width and p is an integer), according to their electronic structures, and the energy gaps for the three families are quite different even with the same p1,3-6. However, a systematic ex…
Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for …
Topology as a Design Variable for Multiproperty Engineering in Synthesized 4-5-6-8 Carbon Nanoribbons
State University of Campinas（坎皮纳斯州立大学）；Federal University of Campina Grande（坎皮纳格兰德联邦大学）；Fluminense Federal University（弗鲁米嫩塞联邦大学）；University of Campinas (UNICAMP)（坎皮纳斯大学）
Knowledge of the topology of the electronic ground state of materials has led to deep insights to novel phenomena such as the integer quantum Hall effect and fermion-number fractionalization, as well as other properties of matter. Joining two insulators of different topological classes produces fascinating boundary states in the band gap. Another exciting recent development is the bottom-up synthesis (from molecular precursors) of graphene nanoribbons (GNRs) with atomic precision control of their edge and width. Here we connect these two fields, and show for the first time that semiconducting …
Graphene epoxide, with oxygen atoms lining up on pristine graphene sheets, is investigated theoretically in this Letter. Two distinct phases: metastable clamped and unzipped structures are unveiled in consistence with experiments. In the stable (unzipped) phase, epoxy group breaks underneath sp2 bond and modifies the mechanical and electronic properties of graphene remarkably. The foldable epoxy ring structure reduces its Young's modulus by 42.4%, while leaves the tensile strength almost unchanged. Epoxidation also perturbs the pi state and opens semiconducting gap for both phases, with depend…
Multiproperty Atomistic Characterization of a Synthesized Pyrazinic Nitrogen-Doped Porous Armchair Graphene Nanoribbon
Laboratory of NanoEngineering, College of Technology, University of Brasília（巴西利亚大学技术学院纳米工程实验室）；Graduate Program in Physics, Institute of Physics, University of Brasília（巴西利亚大学物理研究所物理研究生项目）；Center for Agri-Food Science and Technology, Federal University of Campina Grande（坎皮纳格兰德联邦大学农业食品科学与技术中心）；Institute of Physics, Federal University of Rio Grande do Norte（北里奥格兰德联邦大学物理研究所）；Department of Applied Physics, Gleb Wataghin Institute of Physics, University of Campinas（坎皮纳斯大学格列布·瓦塔金物理研究所应用物理系）；Department of Electrical Engineering, College of Technology, University of Brasília（巴西利亚大学技术学院电气工程系）
Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally-confined, semiconducting strips of graphene is determined by their width, edge shape, and the terminating unit cell, and is c…
Tuning the Electronic Structure of Graphene by Controlling Spatial Confinement
Center for Advanced Systems Understanding (CASUS)（高级系统理解中心）；Helmholtz Zentrum Dresden-Rossendorf（德累斯顿-罗斯多夫亥姆霍兹中心）；Institute of Artificial Intelligence, Technische Universität Dresden（德累斯顿工业大学人工智能研究所）
By means of pseudopotential calculations based on density functional theory (DFT) we studied the effect of hydrogenation on electronic properties of armchair single-wall carbon nanotubes. The calculations demonstrate strong preference for formation of monoatomic H chains along the (5,5) nanotube axis with the H binding in an infinite H chain reaching the value of 2.58 eV per atom. Upon formation of chains of H adatoms, initially metallic (5,5) nanotubes change electronic structure to the semiconducting. The opening of the band gap of $\sim$0.6 eV is accompanied with antiferromagnetic coupling …
Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of graphene. In this study, gate controllability of photo-oxidation of graphene is thoroughly examined using a field-effect-transistor configuration. The presence of water molecules enhances gate controllability, which can be explained using water-oxygen co-adsorption picture. In addition, the photo-oxidation reaction evolves from the edge and proceeds towards …
