Graphene's isolation launched explorations of fundamental relativistic physics originating from the planar honeycomb lattice arrangement of the carbon atoms, and of potential technological applications in nanoscale electronics. Bottom-up fabricated atomically-precise segmented graphene nanoribbons, SGNRs, open avenues for studies of electrical transport, coherence, and interference effects in metallic, semiconducting, and mixed GNRs, with different edge terminations. Conceptual and practical understanding of electric transport through SGNRs is gained through nonequilibrium Green's function (NEGF) conductance calculations and a Dirac continuum model that absorbs the valence-to-conductance energy gaps as position-dependent masses, including topological-in-origin mass-barriers at the contacts between segments. The continuum model reproduces the NEGF results, including optical Dirac Fabry-Perot (FP) equidistant oscillations for massless relativistic carriers in metallic armchair SGNRs, and an unequally-spaced FP pattern for mixed armchair-zigzag SGNRs where carriers transit from a relativistic (armchair) to a nonrelativistic (zigzag) regime. This provides a unifying framework for analysis of coherent transport phenomena and interpretation of forthcoming experiments in SGNRs.
The fabrication of atomically precise structures with designer electronic properties is one of the emerging topics in condensed matter physics. The required level of structural control can either be reached through atomic manipulation using the tip of a scanning tunneling microscope (STM) or by bottom-up chemical synthesis. In this review, we focus on recent progress in constructing novel, atomically precise artificial materials: artificial lattices built through atom manipulation and graphene nanoribbons (GNRs) realized by on-surface synthesis. We summarize the required theoretical background…
We study the band gap of finite $N_A=7$ armchair graphene nanoribbons (7-AGNRs) on Au(111) through scanning tunneling microscopy/spectroscopy combined with density functional theory calculations. The band gap of 7-AGNRs with lengths of 6 nm and more is converged to within 0.1 eV of its bulk value of 2.3 eV, while the band gap opens by several hundred meV in very short 7-AGNRs. The termination has a significant effect on the band gap, doubly hydrogenated termini yielding a lower band gap than singly hydrogenated ones.
Recent advances in graphene nanoribbon-based research have demonstrated the controlled synthesis of chiral graphene nanoribbons (cGNR) with atomic precision using strategies of on-surface chemistry. However their electronic characterization, including typical figures of merit like band gap or frontier bands effective masses, has not yet been reported. In this work, we provide a detailed characterization of (3,1)-cGNRs on Au(111). The structure and epitaxy, as well as the electronic band structure of the ribbons, are analyzed by means of scanning tunneling microscopy and spectroscopy, angle res…
Starting from an engineered periodic optical structure formed by waveguide arrays comprised of two interleaved lattices, we simulate a deformed Dirac equation. We show that the system also simulate graphene nano ribbons under strain. This optical analogue allows us to study the phenomenon of Zitterbewegung for the modified Dirac equation. Our results show that the amplitude of Zitterbewegung oscillations changes as the deformation parameter is changed.
Graphene nanoribbons (GNRs) make up an extremely interesting class of materials. On the one hand GNRs share many of the superlative properties of graphene, while on the other hand they display an exceptional degree of tunability of their optoelectronic properties. The presence or absence of correlated low-dimensional magnetism, or of a widely tunable band gap, is determined by the boundary conditions imposed by the width, crystallographic symmetry and edge structure of the nanoribbons. In combination with additional controllable parame-ters like the presence of heteroatoms, tailored strain, or…
Precision control of interfacial structures and electronic properties is the key to the realization of functional heterostructures. Here, utilizing the scanning tunneling microscope (STM) both as a manipulation and characterization tool, we demonstrate the fabrication of a heterostructure in a single atomically precise graphene nanoribbon (GNR) and report its electronic properties. The heterostructure is made of a seven-carbon-wide armchair GNR and a lower band gap intermediate ribbon synthesized bottom-up from a molecular precursor on an Au substrate. The short GNR segments are directly writt…
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-g…
Excitonic emission from atomically precise graphene nanoribbons (GNRs) synthesised on a metal surface is probed with atomic-scale spatial resolution using a scanning tunneling microscopy (STM) approach. A STM-based strategy to transfer the GNRs to a partially insulating surface is used to prevent light emission quenching of the ribbons by the metal substrate. Sub-nanometer resolved STM-induced fluorescence spectra reveal emission from localized dark excitons build upon the topological end states of the GNRs. A low frequency vibronic emission comb whose characteristics change with the GNR lengt…
Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting individual GNRs remains challenging due to their nanometer-sized width and length as well as their high density on the metallic growth substrate. Here, we demonstrate the contacting and electrical chara…
Graphene nanoribbons (GNRs) synthesized using a bottom-up technique potentially enable future electronic devices owing to the tunable electronic structures depending on the well-defined width and edge geometry. For instance, armchair-edged GNRs (AGNRs) exhibit width-dependent bandgaps. However, the bandgaps of AGNRs synthesized experimentally thus far are relatively large, well above 1 eV. Such a large bandgap may deteriorate device performances due to large Schottky barriers and carrier effective masses. We describe the bottom-up synthesis of AGNRs with a smaller bandgap using dibromobenzene-…
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percol…
Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNR…
Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characterization. In contrast, Raman spectroscopy is a sensitive method for the characterization of GNRs, in particular for investigating their width and structure. Here, we report on a length-dependent, Raman ac…
2D abrupt nano-junctions blending sp-sp2 bonds on atomically precise heterostructures
Politecnico di Milano（米兰理工大学）；Università degli Studi di Milano（米兰大学）；INFN Sezione di Milano（意大利国家核物理研究所米兰分部）；Università di Pavia（帕维亚大学）；Università Degli Studi Di Padova（帕多瓦大学）；Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-Universidad de Zaragoza（阿拉贡纳米科学与材料研究所（INMA），西班牙国家科学研究委员会-萨拉戈萨大学）
Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with atomic-scale components. Here we investigate negative differential resistance (NDR) devices based on atomically precise graphene nanoribbons. Our computational evaluation of the traditional double-barrier resonant tunneling diode NDR structure uncovers important issues at the atomic scale, concerning the need to minimize the tunneling current between the leads wh…
The influence of substrate steps on the bottom-up synthesis of atomically precise graphene nanoribbons (GNRs) on an Au(111) surface is investigated. A straight surface step is found to promote the assembly of long and compact arrays of polymers with enhanced interchain pi-pi stacking interaction, which creates a steric hindrance effect on cyclodehydrogenation to suppress the H passivation of polymer ends. The modified two-stage growth process results in periodic arrays of GNRs with doubled average length near step edges.
We report on the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4-dibromo-para-terphenyl as molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbons band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinn…
Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise graphene nanoribbons (GNR). We demonstrate the controlled periodic coupling of topological boundary states at junctions of armchair GNRs of different widths to create quasi-1D trivial and non-trivial electronic quantum phases. Their topological class is experimentally determined by drawing upon the bulk-boundary correspondence and measuring the presence (non-t…
Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer
Universidad de Granada（格拉纳达大学）；The Pennsylvania State University（宾夕法尼亚州立大学）；Max Planck Institute for Polymer Research（马克斯·普朗克聚合物研究所）；University of Bern（伯尔尼大学）；Johannes Gutenberg University Mainz（美因茨约翰内斯·古腾堡大学）
Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials carved from graphene lattice. GNRs possess high mobility and current carrying capability, sizable bandgap, and versatile electronic properties tailored by the orientations and open edge structures. These unique properties make GNRs promising candidates for prospective electronics applications including nano-sized field-effect transistors (FETs), spintronic devices, and quantum information processing. To fully exploit the potential of GNRs, fundamental understanding of structure-property relationship, precise control of …
In a bridge configuration, a single graphene nanoribbon (GNR) is positioned with a picometer precision over a trench in between two monoatomic steps on an Au(111) surface. This GNR molecular wire adopts a deformed conformation towards the down terrace in between the two contact step edges. Using differential conductance dI/dV mapping from a low-temperature scanning tunneling microscope, it is demonstrated how the electronic delocalization along GNR is cut at each contact by its down curvature. It points out the need to bring conductive nanocontacts backside of the support for preserving the fr…
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication thro…
Thanks to their highly tunable band gaps, graphene nanoribbons (GNRs) with atomically precise edges are emerging as mechanically and chemically robust candidates for nanoscale light emitting devices of modulable emission color. While their optical properties have been addressed theoretically in depth, only few experimental studies exist, limited to ensemble measurements and without any attempt to integrate them in an electronic-like circuit. Here we report on the electroluminescence of individual GNRs suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate, c…
Deterministic bottom-up approaches for synthesizing atomically well-defined graphene nanoribbons (GNRs) largely rely on the surface-catalyzed activation of selected labile bonds in a molecular precursor followed by step growth polymerization and cyclodehydrogenation. While the majority of successful GNR precursors rely on the homolytic cleavage of thermally labile C-Br bonds, the introduction of weaker C-I bonds provides access to monomers that can be polymerized at significantly lower temperatures, thus helping to increase the flexibility of the GNR synthesis process. Scanning tunneling micro…
Graphene nanoribbons (GNRs) with atomically precise width and edge structures are a promising class of nanomaterials for optoelectronics, thanks to their semiconducting nature and high mobility of charge carriers. Understanding the fundamental static optical properties and ultrafast dynamics of charge carrier generation in GNRs is essential for optoelectronic applications. Combining THz spectroscopy and theoretical calculations, we report a strong exciton effect with binding energy up to 700 meV in liquid-phase-dispersed GNRs with a width of 1.7 nm and an optical bandgap of 1.6 eV, illustratin…
Spin-ordered electronic states in hydrogen-terminated zigzag nanographene give rise to magnetic quantum phenomena that have sparked renewed interest in carbon-based spintronics. Zigzag graphene nanoribbons (ZGNRs), quasi one-dimensional semiconducting strips of graphene featuring two parallel zigzag edges along the main axis of the ribbon, are predicted to host intrinsic electronic edge states that are ferromagnetically ordered along the edges of the ribbon and antiferromagnetically coupled across its width. Despite recent advances in the bottom-up synthesis of atomically-precise ZGNRs, their …
Graphene nanoribbons (GNRs), low-dimensional platforms for carbon-based electronics, show the promising perspective to also incorporate spin polarization in their conjugated electron system. However, magnetism in GNRs is generally associated to localized states around zigzag edges, difficult to fabricate and with high reactivity. Here we demonstrate that magnetism can also be induced away from physical GNR zigzag edges through atomically precise engineering topological defects in its interior. A pair of substitutional boron atoms inserted in the carbon backbone breaks the conjugation of their …
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to th…
Length-independent quantum transport through topological band states of graphene nanoribbons
Université de Strasbourg（斯特拉斯堡大学）；CNRS（法国国家科学研究中心）；Empa - Swiss Federal Laboratories for Materials Science and Technology（瑞士联邦材料科技与工程研究所）；Max Planck Institute for Polymer Research（马克斯·普朗克聚合物研究所）；Johannes Gutenberg University Mainz（美因茨约翰内斯·古腾堡大学）；University of Bern（伯尔尼大学）；Donostia International Physics Center (DIPC) – UPV/EHU（圣塞巴斯蒂安国际物理中心（巴斯克国立大学））；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯基克，巴斯克科学基金会）；Materials Genome Institute, Shanghai University（上海大学材料基因组研究院）；Department of Materials, University of Oxford（牛津大学材料系）
Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally-confined, semiconducting strips of graphene is determined by their width, edge shape, and the terminating unit cell, and is c…
Precise control over the size and shape of graphene nanostructures allows engineering spin-polarized edge and topological states, representing a novel source of non-conventional $π$-magnetism with promising applications in quantum spintronics. A prerequisite for their emergence is the existence of robust gapped phases, which are difficult to find in extended graphene systems: only armchair graphene nanoribbons (GNRs) show a band gap that, however, closes for any other GNR orientation. Here we show that semi-metallic chiral GNRs (chGNRs) narrowed down to nanometer widths undergoes a topological…
Synthesis of Metal-Semiconductor Heterojunctions in Single Graphene Nanoribbons
University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory（加州大学伯克利分校与劳伦斯伯克利国家实验室卡弗里能源纳米科学研究所）；Department of Chemistry, Columbia University（哥伦比亚大学化学系）；Department of Physics, University of Illinois Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校物理系）；Department of Physics, Cornell University（康奈尔大学物理系）；Department of Materials Science and Nanoengineering, Rice University（莱斯大学材料科学与纳米工程系）
We report on the fabrication and transport characterization of atomically-precise single molecule devices consisting of a magnetic porphyrin covalently wired by graphene nanoribbon electrodes. The tip of a scanning tunneling microscope was utilized to contact the end of a GNR-porphyrin-GNR hybrid system and create a molecular bridge between tip and sample for transport measurements. Electrons tunneling through the suspended molecular heterostructure excited the spin multiplet of the magnetic porphyrin. The detachment of certain spin-centers from the surface shifted their spin-carrying orbitals…
