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arXiv 2210.03366cond-mat.mes-hall
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使用多栅极架构的来自原子级精确石墨烯纳米带的可调谐量子点

Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture

Jian Zhang, Oliver Braun, Gabriela Borin Barin, Sara Sangtarash, Jan Overbeck, Rimah Darawish, Michael Stiefel, Roman Furrer, Antonis Olziersky, Klaus Müllen, I… 展开作者

Jian Zhang, Oliver Braun, Gabriela Borin Barin, Sara Sangtarash, Jan Overbeck, Rimah Darawish, Michael Stiefel, Roman Furrer, Antonis Olziersky, Klaus Müllen, Ivan Shorubalko, Abdalghani H. S. Daaoub, Pascal Ruffieux, Roman Fasel, Hatef Sadeghi, Mickael L. Perrin, Michel Calame

摘要:

原子精确的石墨烯纳米带(GNRs)由于其在很大程度上可改变的电子性质而越来越引起人们的兴趣,这可以通过在化学合成期间控制其宽度和边缘结构来定制。近年来,用于电子器件的GNR性质的开发集中在GNR集成到场效应晶体管(FET)几何结构中。然而,这种FET器件由于存在单个栅极而具有有限的静电可调谐性。在这里,我们报告了9原子宽扶手椅型石墨烯纳米带(9-AGNRs)到多栅极FET几何形状的器件集成,包括一个超窄的指状栅极和两个侧栅极。我们使用高分辨率的电子束光刻(EBL)来定义窄至12 nm的指状栅极,并将它们与石墨烯电极相结合以接触GNR。低温输运光谱测量揭示了量子点(QD)的行为与丰富的库仑金刚石图案,这表明GNR形成的量子点是串联和并联连接。此外,我们表明,额外的门使差分调谐的量子点在纳米结,提供了第一步,对GNR为基础的多点系统的多门控制。

英文摘要:

Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.

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