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arXiv 1803.07155cond-mat.mes-hall
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基于高度定向的化学合成N=7扶手椅型石墨烯纳米带网络的场效应晶体管

Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons

Vikram Passi, Amit Gahoi, Boris V. Senkovskiy, Danny Haberer, Felix R. Fischer, Alexander Grüneis, Max C. Lemme

摘要:

我们报告了N = 7扶手椅式石墨烯纳米带(7-AGNR)场效应晶体管的实验演示和电气表征。背栅晶体管由原子级精确和高度对准的7-AGNR制成,采用自下而上的方法合成。大面积转移工艺具有用原子级精确的纳米带制造可扩展器件的前景。FET的沟道比30 nm至40 nm的平均纳米晶长度长约30倍。GNRs的密度很高,因此可以假定运输远高于逾渗阈值。长沟道晶体管表现出87.5的最大I $_{ON}$ /I $_{OFF}$电流比。

英文摘要:

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I$_{ON}$/I$_{OFF}$ current ratio of 87.5.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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