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arXiv 1508.06809cond-mat.mes-hall
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荷电石墨烯纳米粒子量子点

Charging graphene nanoribbon quantum dots

D. P. Żebrowski, B. Szafran

摘要:

我们描述了通过电子或空穴对半导体石墨烯纳米颗粒内静电诱导的量子点充电。所应用的模型是基于紧束缚的方法与电子-电子相互作用的平均场局域自旋密度近似。数值方法考虑了所有$p_z$电子的电荷和电荷中性点附近的状态对外部电势的屏蔽。讨论了均质带和嵌入带内的石墨烯薄片。作为外部限制电位(顶栅电位)和费米能量(背栅电位)的函数的传输带隙的形成描述在良好的定性与实验数据一致。对于固定数量的过量电子,我们发现添加到系统的过量电荷是,-取决于定义器件工作点的电压:- 在由于顶栅电势$(i)$而位于量子点内部的传输间隙中,- 在传输间隙中,由于背栅电势或$(iii)$在量子点区域和带连接上延伸,讨论了用冻结价带近似来描述量子点的过剩电子充电的适用性。

英文摘要:

We describe charging a quantum dot induced electrostatically within a semiconducting graphene nanoribbon by electrons or holes. The applied model is based on a tight-binding approach with the electron-electron interaction introduced by a mean field local spin density approximation. The numerical approach accounts for the charge of all the $p_z$ electrons and screening of external potentials by states near the charge neutrality point. Both a homogenous ribbon and a graphene flake embedded within the ribbon are discussed. The formation of transport gaps as functions of the external confinement potential (top gate potential) and the Fermi energy (back gate potential) are described in good qualitative agreement with the experimental data. For a fixed number of excess electrons we find that the excess charge added to the system is, - depending on the voltages defining the work point of the device: $(i)$ delocalized outside the quantum dot, - in the transport gap due to the top gate potential $(ii)$ localized inside the quantum dot, - in the transport gap due to the back gate potential or $(iii)$ extended over both the quantum dot area and the ribbon connections, - outside the transport gaps. The applicability of the frozen valence band approximation to describe charging the quantum dot by excess electrons is also discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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