Quantum states in graphene are four-fold degenerate: two fold in spins, and two fold in valleys.Both degrees of freedom can be utilized for qubit preparations. In our bilayer graphene quantumdots, we demonstrate that the valley g-factorgv, defined analogously as the spin g-factorgsforvalley splitting in perpendicular magnetic field, is tunable by over a factor of 4 from 20 to 90. Wefind that largergvresults from larger electronic dot sizes, determined from the charging energy.This control is achieved by adjusting voltages on merely two gates, which also allows for tuning ofthe dot-lead tunnel coupling. On our versatile device, bipolar operation, charging our quantum dotwith charge carriers of the same or the opposite polarity as the leads, can be performed. Dots ofboth polarity are tunable to the first charge carrier by action of the plunger gate, such that thetransition from an electron to a hole dot can be observed. By adding more gates, this system caneasily be extended to host double dots.
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.
We present a systematic study of interface roughness and its effect on coherent dynamical processes in quantum dots. The potential due to a sharp, flat interface lifts the degeneracy of the lowest energy valleys and yields a set of valley eigenstates. Interface roughness is characterized by fluctuations in the location of the interface and in the magnitude of the potential step. Variations in the position of the interface, which are expected to occur on the length scale of the lattice constant, reduce the magnitude of the valley-orbit coupling. Variations in the size of the interface potential…
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctu…
Hyperfine interaction (HFI) in carbon nanotube and graphene quantum dots is due to the presence of 13C atoms. We theoretically show that in these structures the short-range nature of the HFI gives rise to a coupling between the valley degree of freedom of the electron and the nuclear spin, in addition to the usual electron spin-nuclear spin coupling. We predict that this property of the HFI affects the Pauli blockade transport in carbon-based double quantum dots. In particular, we show that transport is blocked only if both the spin and the valley degeneracies of the quantum dot levels are lif…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. We propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded into a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a "fin…
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, i…
We present a theoretical study of the Pauli or spin-valley blockade for double quantum dots in semiconducting carbon nanotubes. In our model we take into account the following characteristic features of carbon nanotubes: (i) fourfold (spin and valley) degeneracy of the quantum dot levels, (ii) the intrinsic spin-orbit interaction which is enhanced by the tube curvature, and (iii) valley-mixing due to short-range disorder, i.e., substitutional atoms, adatoms, etc. We find that the spin-valley blockade can be lifted in the presence of short-range disorder, which induces two independent random (i…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposi…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley w…
We propose the concept of valley coherence and superradiance in the reciprocal space and show that it leads to an $N$-fold decrease of the bright exciton radiative lifetime in quantum dots (QDs) of an $N$-valley semiconductor. Next we explain why, despite this, the exciton radiative lifetimes in PbX (X = S, Se, Te) QDs, measured from the photoluminescence decay, are in the microsecond range. We also address peculiarities of the light-matter interaction in nanostructures made of narrow-gap materials with strong inter-band coupling.
The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N = 4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum …
We present electronic structure and quantum transport calculations that predict conducting channels induced in graphene quantum dots by lines of adsorbed hydrogen atoms to function as highly efficient, experimentally realizable valley filters, accumulators and switches. The underlying physics is a novel property of graphene Dirac point resonances (DPRs) that is revealed here, namely, that an electric current passing through a DPR-mediated conducting channel in a given direction is carried by electrons of em only one of the two graphene valleys. Our predictions apply to lines of hydrogen atoms …
Control and manipulation of single charges and their internal degrees of freedom, such as spins, is a fundamental goal of nanoscience with promising technological applications. Recently, atomically thin semiconductors such as WSe$_2$ have emerged as a platform for valleytronics, offering rich possibilities for optical, magnetic and electrical control of the valley index. While progress has been made in controlling valley index of ensemble of charge carriers, valley control of individual charges, crucial for valleytronics, remains unexplored. Here, we provide unambiguous evidence for localized …
We develop a theory of inter-valley Coulomb scattering in semiconducting carbon-nanotube quantum dots, taking into account the effects of curvature and chirality. Starting from the effective-mass description of single-particle states, we study the two-electron system by fully including Coulomb interaction, spin-orbit coupling, and short-range disorder. We find that the energy level splittings associated with inter-valley scattering are nearly independent of the chiral angle and, while smaller than those due to spin-orbit interaction, large enough to be measurable.
We propose a scheme for coherent rotation of the valley isospin of a single electron confined in a carbon nanotube quantum dot. The scheme exploits the ubiquitous atomic disorder of the nanotube crystal lattice, which induces time-dependent valley mixing as the confined electron is pushed back and forth along the nanotube axis by an applied ac electric field. Using experimentally determined values for the disorder strength we estimate that valley Rabi oscillations with a period on the nanosecond timescale are feasible. The valley resonance effect can be detected in the electric current through…
We study a cluster of quantum dots defined within silicene that host confined electron states with spin and valley degrees of freedom. Atomistic tight-binding and continuum Dirac approximation are applied for few-electron system in quest for spontaneous valley polarization driven by inter-dot tunneling and electron-electron interaction, i.e. a valley counterpart of itinerary Nagaoka ferromagnetic ordering recently identified in GaAs square cluster of quantum dots with three excess electrons [P. Dehollain, {\it et al.}, Nature {\bf 579}, 528 (2020)]. We find that for Hamiltonian without intrins…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We demonstrate a simple analytical method to calculate the phase, and thus the exchange splitting and singlet-triplet qubit frequency, for an arbitrary interface. We then show that, with lateral control of the position of a quantum dot using a gate voltage, the valley-orbit phase can be controlled over a wide range, so that variations in the exchange splitting…
We study single and double quantum dots defined electrostatically within silicene. The spin-valley structure of the confined single- and two-electron system is determined and the effects of the intervalley scattering induced by the crystal edge and the Coulomb interaction are quantified. The states in a double quantum system are discussed in the context of the spatial symmetry of the single- and two-electron extended orbitals. We determine the charge, spin and valley transitions times induced by alternate electric fields of the microwave frequency. The valley transition times can be controlled…
We consider the photon-assisted tunneling (PAT) and the Landau-Zener-Stueckelberg (LZS) interference for double quantum dots induced electrostatically along a semiconducting carbon nanotube. An atomistic tight-binding approach and the time-dependent configuration interaction method are employed for description of the systems of a few confined electrons and holes. We reproduce the patterns of the LZS interference recently observed for the quantum double dots describing transport across hole-localized states. Moreover, we indicate that for charge configurations for which the ground-state is Paul…
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in a bilayer graphene quantum dot in the single-electron regime…
Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and va…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology applied to MoS2, we find a twofold degenerate energy spectrum of electrons confined in the two non-equivalent K-valleys by the metallic gates as well as six-fold degenerate spectrum associated with Q-v…
The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the exchange interaction in a symmetric two-electron silicon double quantum dot. Through a configuration interaction calculation, we find that exchange splitting is suppressed at a finite value of valley phase difference between the two dots, and reaches its minimum value ({\sim} 0) when the phase difference is π. Such a suppression can be explained using the Hubb…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum…
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.
We report measurements of mesoscopic fluctuations of elastic cotunneling in Coulomb blockaded quantum dots. Unlike resonant tunneling on Coulomb peaks, cotunneling in the valleys is sensitive to charging effects. We observe a larger magnetic field scale for the cotunneling (valley) fluctuations compared to the peaks, as well as an absence of "weak localization" (reduced conductance at B = 0) in valleys. Cotunneling fluctuations remain correlated over several valleys while peak conductance correlations decreases quickly.
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In…
Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitt…
We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states localized within a quantum dot taking into account the circumferential spin-orbit interaction due to the s-p hybridization and external fields. The basis of eigenstates localized in the quantum dot is used in the solution of the time-dependent Schroedinger equation for description of spin flips and inter-valley transitions that are driven by periodic perturbation…
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nan…
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as well as the quantum dot geometry for both ideal and disordered Si/SiGe interfaces. We theoretically model a realistic electrostatically defined quantum dot and find the exact ground and excited states for the out-of-plane electron motion. This enables us to find the electron envelope function and its dependence on the electric and magnetic fields. For a quant…
The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types of QDs, the valley degree of freedom is a good quantum number. We show that its degeneracy is efficiently and controllably broken by a magnetic field applied perpendicular to the graphene plane. This opens up a feasible route to create well-defined and well controlled spin- and valley-qubits in graphene QDs. We also point out the similarities and difference…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $α$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and calculate the generated pseudomagnetic field having an opposite direction for electrons originating from different valleys, the resulting valley-polarized currents, and the conductance between the injector and collector situated opposite one another. Depending on the quantum dot's width and width-to-height ratio, we detect different transport regimes with and without v…
Similar to atoms and nuclei, semiconductor quantum dots exhibit formation of shells. Predictions of magnetic behavior of the dots are often based on the shell occupancies. Thus, closed-shell quantum dots are assumed to be inherently nonmagnetic. Here, we propose a possibility of magnetism in such dots doped with magnetic impurities. On the example of the system of two interacting fermions, the simplest embodiment of the closed-shell structure, we demonstrate the emergence of a novel broken-symmetry ground state that is neither spin-singlet nor spin-triplet. We propose experimental tests of our…
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these devices. Here we introduce a novel, systematic effective mass theory of valley-orbit coupling in disordered silicon systems. This theory reveals valley-orbit hybridization effects that are detrimental for storing quantum information in the valley degree of freedom, including non-vanishing dipole matrix elements between valley states and altered intervalley tunnel…
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative analytical approach to study the dynamics of exchange-coupled quantum dots with valley degrees of freedom. We show that if the valley splitting is large and electrons are not properly initialized to valley eigenstates, then time evolution of the system will lead to spin-valley entanglement. Spin-valley entanglement will also occur if the valley splitting is small an…
We describe the effects of the crossing of the exciton levels in moire quantum dots in external magnetic field. We demonstrate that the unpolarized light can create significant dynamic valley polarization of interlayer excitons in the conditions where the Zeeman energy is much smaller than the thermal energy. The angular momentum is gained by the excitons from the nuclear spin fluctuations. In the $n$-type moire quantum dots for the typical experimental parameters, the unpolarized light can lead to the complete valley polarization of the resident electrons.
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~μ\text{eV}$ to $610~μ\text{eV}$ with a slope of $-45\pm 3~μ\text{eV/V}$ (or equivalently a slope of $-48\pm 3~μ\text{eV/(MV/m)}$ with respect to the effective …
Hyperfine interaction (HF) is of key importance for the functionality of solid-state quantum information processing, as it affects qubit coherence and enables nuclear-spin quantum memories. In this work, we complete the theory of the basic hyperfine interaction mechanisms (Fermi contact, dipolar, orbital) in carbon nanotube quantum dots by providing a theoretical description of the orbital HF. We find that orbital HF induces an interaction between the nuclear spins of the nanotube lattice and the valley degree of freedom of the electrons confined in the quantum dot. We show that the resulting …
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the depend…
Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-hole crossover in a bilayer graphene QD, demonstrating the opposite sign of the orbital magnetic moments associated with the Berry curvature. Using three layers of metallic top gates, we independently…
Manipulation and readout of spin qubits in quantum dots made in III-V materials successfully rely on Pauli blockade that forbids transitions between spin-triplet and spin-singlet states. Quantum dots in group IV materials have the advantage of avoiding decoherence from the hyperfine interaction by purifying them with only zero-spin nuclei. Complications of group IV materials arise from the valley degeneracies in the electronic bandstructure. These lead to complicated multiplet states even for two-electron quantum dots thereby significantly weakening the selection rules for Pauli blockade. Only…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactions is presently the subject of important open questions. Here we investigate the influence of valleys on exchange in a coupled donor/quantum dot system, a basic building block of recently proposed schemes for robust quantum information processing. Using a scanning tunneling microscope tip to position the quantum dot with sub-nm precision, we find a…
We investigate single-electron transport through quantum dots with negative charging energy induced by a polaronic energy shift. For weak dot-lead tunnel couplings, we demonstrate a bipolaronic blockade effect at low biases which suppresses the oscillating linear conductance, while the conductance resonances under large biases are enhanced. Novel conductance plateau develops when the coupling asymmetry is introduced, with its height and width tuned by the coupling strength and external magnetic field. It is further shown that the amplitude ratio of magnetic-split conductance peaks changes from…
Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-Büttiker formalism along with the tight-binding model, we investigate the quantum Hall (QH) effects in unipolar and bipolar monolayer-bilayer graphene (MLG-BLG) junctions. We find that a Hall bar made of an armchair MLG-BLG junction in the bipolar regime results in valley-polarized edge-channel interferences and can operate a fully tunable Mach-Zehnder (MZ) interferometer device. Investigation of the bar-width and m…
Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, t…
Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In consequence electrons occupy the lowest level in different valleys in the absence of Hund's coupling when the dot size is less than 10 nm. High-spin states are easily realized by applying a small magnetic field. (ii) When the dot size is much larger, the electron-electron interaction becomes relevant in determining the electronic states. Electrons are accommodated i…
We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses <6 nm valley splitting is found to be >150 ueV. Using the unique advantage of atomistic calculations we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5, t…
We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intra-valley tunnel coup…
In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By assuming parabolic confinement for both the electron and the hole, we derive model wave functions for the relative and the center-of-mass motions of electron-hole pairs, and investigate theoretically resonant energy transfer among excitons localized in two neighboring quantum dots. We quantify the probability of energy transfer for a direct-gap transition by …
Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite Coulomb interaction $U$, whose structure mimics the nonlinear conductance through a dot. The density of states is obtained as a function of temperature and applied magnetic field in the Kondo regime using an equation-of-motion approach. We show that there is a very complex peak structure near the Fermi energy, with several signatures that distinguish this spin-va…
We calculate the equilibrium properties and the dynamic response of two vertically coupled circular quantum dots populated by particles of different electrical charge sign, i.e. electrons and holes. The equilibrium density profiles are obtained and used to compute the frequencies and oscillator strengths of magnetoplasma excitations. We find a strong coupling between the modes derived from the center-of-mass modes of the individual dots which leads to an anticrossing with a pronounced oscillator strength transfer from the ``acoustic'' to the ``optical'' branch. Also, due to breaking of the gen…
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of…
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
