蚀刻石墨烯纳米带的能隙
Energy gaps in etched graphene nanoribbons
摘要：
介绍了在蚀刻的石墨烯纳米管上的输运测量。结果表明，两个不同的电压尺度可以实验提取的特征参数区域的抑制电导在低电荷密度的带。其中之一是有关的局域态的充电能量，其他的无序势的强度。闸门的杠杆臂对于不同的局部状态变化高达30%，因此必须沿着带在适当的位置上展开。一个单电子晶体管被用来证明个别电子的局域化状态。在我们的样品中，特征充电能量为10 meV的顺序，无序势的顺序为100 meV的特征强度。
英文摘要：
Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.
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