Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
Ionel Lazanu, Sorina Lazanu
备注：
X-th Pisa Meeting on Advanced Detectors, May 21-27, 2006, La Biodola, Isola d'Elba (Italy), to be published in Nuclear Instruments and Methods in Physics Research A
In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in concrete environments at the next generations of high energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.
The absorption length, $λ_{abs}$, of light with wavelengths between 0.95 and 1.30$~μ$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $λ_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $λ_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $λ_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiat…
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between simulation findings and experimental measurements fosters the applic…
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
The technology of Silicon Drift Detectors (SDDs) has been selected for the two instruments aboard the Large Observatory For X-ray Timing (LOFT) space mission. LOFT underwent a three year long assessment phase as candidate for the M3 launch opportunity within the "Cosmic Vision 2015 -- 2025" long-term science plan of the European Space Agency. During the LOFT assessment phase, we studied the displacement damage produced in the SDDs by the protons trapped in the Earth's magnetosphere. In a previous paper we discussed the effects of the Non Ionising Energy Losses from protons on the SDD leakage c…
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model h…
Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.
Measurements are presented of the reduction of signal output due to radiation damage for plastic scintillator tiles used in the hadron endcap (HE) calorimeter of the CMS detector. The tiles were exposed to particles produced in proton-proton (pp) collisions at the CERN LHC with a center-of-mass energy of 13 TeV, corresponding to a delivered luminosity of 50 fb$^{-1}$. The measurements are based on readout channels of the HE that were instrumented with silicon photomultipliers, and are derived using data from several sources: a laser calibration system, a movable radioactive source, as well as …
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO_2 layer and of the Si-SiO_2 interface using MOS capacitors manufactured on high resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, hav…
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance are presented. In particular, it is shown that the changes…
Nuclear recoils in crystal detectors generate radiation damage in the form of crystal defects that can be measured in scientific-grade CCDs as local hot spots of leakage current stimulated by temperature increases in the devices. In this proceeding, we use a neutron source to generate defects in DAMIC-M CCDs, and using increases in leakage current at different temperatures, we demonstrate a procedure for identifying crystal defects in the CCDs of the DAMIC-M experiment. This is the first time that individual defects generated from nuclear recoils have been studied. This technique could be used…
The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the…
The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of MPPCs from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at Brookhaven National Lab and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10$^8$ n/cm$^2$ to 10$^{12}$ n/cm$^2$. The main effect of gamma ray damage is an increase in the noise and leakage curren…
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ n$_{eq}$/cm$^2$, and the IEL (Ionizing Energy Loss) dose in the SiO$_2$ 12 MGy. The optimisation of the pixel sensors and the understanding of their performance as a function of fluence and dose makes a radiation damage model for TCAD simulations, which describes the available experimental data, highly desirable. The currently available bulk-damage …
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations <100> and <111> produced by two vendors, CiS and Hamamatsu, have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron light source. Using capacitance/conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the surface densities o…
Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly attractive for resource-constrained missions such as space-based detector applications. However the space radiation environment is known to be particularly harsh on semiconductor devices, where high particle fluences can degrade performance over time. The radiation hardness of a particular SiPM, manufactured by ON Semiconductor (formally SensL), has yet to b…
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL.
Radiation Damage Studies of Silicon Photomultipliers
我们报告的硅光电倍增器（SiPM）的辐射硬度的测量由布鲁诺凯斯勒基金会在意大利（1 mm $^2$和6.2 mm $^2$），透视技术和仪器中心在俄罗斯（1 mm $^2$和4.4 mm $^2$），日本滨松公司（1 mm $^2$）。在Massachusetts General Hospital使用212 MeV质子束照射SiPM，SiPM在工作电压下接收高达$3 \times 10^{10}$质子/cm $^2$的注量。在照射期间连续读取漏电流。周期性地暂停质子的递送以记录响应于校准光脉冲的示波器迹线，以监测SiPM的增益、光子检测效率和暗计数。漏电流和暗噪声随注量的增加而增加。Te漏电流被发现是成比例的噪声分布的均方差，表明暗计数是由于增加随机个别像素激活，而SiPM仍然完全功能的光子探测器。发现SiPM在室温下退火，在大约100天内漏电流减少了2倍。
The current understanding of radiation tollerance of Silicon Photomultipliers (SiPMs) is reviewd. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of irradiated SiPMs with X-ray, gamma, electron, proton and neutron sources are presented. The most critical effect of radiation on SiPMs is the increase of dark count rate, which makes it impossible to resolve signals generated by a single photon from the noise. Methods to characterize irradiated SiPMs after their single photo-electron resolution is lost are discu…
The last decade has increasingly seen the use of silicon photomultipliers (SiPMs) instead of photomultiplier tubes (PMTs). This is due to various advantages of the former on the latter like its smaller size, lower operating voltage, higher detection efficiency, insensitivity to magnetic fields and mechanical robustness to launch vibrations. All these features make SiPMs ideal for use on space based experiments where the detectors require to be compact, lightweight and capable of surviving launch conditions. A downside with the use of this novel type of detector in space conditions is its susce…
In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
Marietta Blau Institute for Particle Physics, Austrian Academy of Sciences（玛丽塔·布劳粒子物理研究所，奥地利科学院）；Institute of Atomic and Subatomic Physics, TU Wien（维也纳工业大学原子与亚原子物理研究所）
Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context of using these photodetectors in future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 MeV neutron equivalent fluence ranging from 1.27*10^8 n/cm^2 to 1.23*10^10 n/cm^2 . After the irradiation, the SiPMs experienced a large increase in the dark current and noise, which may pose problems for long-running space missions in terms of power consumption, thermal control and detection of low-energy events. Measurements performed with a CeBr3 scintillator c…
Diamond is more and more used as detector material for particle detection. One argument for diamond is its higher radiation hardness compared to silicon. Since various particles have different potential for radiation damage at different energies a scaling rule is necessary for the prediction of radiation damage. For silicon detectors the non-ionising energy loss (NIEL) is used for scaling the effects of different particles. A different way of predicting the radiation damage is based on the Norget-Robinson-Torrens theorem to predict the number of displacements per atom (DPA). This provides a be…
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors.…
A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for …
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few $10^{14}$ cm$^{-2}$ and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280°C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occ…
This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were estimated at regular intervals by performing dedicated scans of the charge collection efficiency as a function of the applied bias voltage. Predictions of the expected leakage currents and full depletion voltages are extracted from the simulated radiation profile, the luminosity delivered by the LHC, and the thermal history of the silicon sen…
During the three years long assessment phase of the LOFT mission, candidate to the M3 launch opportunity of the ESA Cosmic Vision programme, we estimated and measured the radiation damage of the silicon drift detectors (SDDs) of the satellite instrumentation. In particular, we irradiated the detectors with protons (of 0.8 and 11 MeV energy) to study the increment of leakage current and the variation of the charge collection efficiency produced by the displacement damage, and we "bombarded" the detectors with hypervelocity dust grains to measure the effect of the debris impacts. In this paper w…
This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at $π-$M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to fully design and simulate the device physics response in very short computational time, O(1-100 s) per simulated signal, by exploiting parallel computation using single or multi-thread processors. Thi…
D0 Run II硅微带跟踪器（SMT）有3平方米的硅面积。912个读出模块上的6192个SVXIIe芯片可读出792，576个通道。SMT在D0探测器的全伪快度覆盖范围内提供轨道和顶点重建能力。自2002年4月以来，整个检测器已成功运行。本报告涵盖了调试和运行的经验，最近的电子升级，提高了SMT的稳定性和辐射损伤的估计。
A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an energy close to the silicon band gap. Using published data, a measurement accuracy of 1 to 4 kV/cm is estimated. The set-up is intended for determining the electric field in radiation-damaged silicon detectors as a function of irradiation fluence and particle type, temperature and bias voltage. The overall concept and the individual components of the set-up are p…
A statistical model of the nonlinear response of silicon photomultipliers is presented. It includes losses of both the photodetection efficiency and the gain during pixel recovery periods as well as the effect of correlated and uncorrelated noise. The model provides either the mean output charge of a SiPM for incident light pulses of arbitrary shape or the output current for continuous light. The dependence of the SiPM response on both the overvoltage and the pulse shape is also properly described. The model has been validated for two different silicon photomultipliers using scintillation ligh…
Radiation damage study of Belle II silicon strip sensors with 90 MeV electron irradiation
Institute of High Energy Physics, Austrian Academy of Sciences（奥地利科学院高能物理研究所）；Aix Marseille Univ, CNRS/IN2P3, CPPM（艾克斯-马赛大学，法国国家科学研究中心/法国原子能和替代能源委员会，粒子与宇宙学实验室）；Indian Institute of Technology Bhubaneswar（布巴内斯瓦尔印度理工学院）；Indian Institute of Technology Madras（马德拉斯印度理工学院）；Malaviya National Institute of Technology Jaipur（斋普尔马拉维亚国立技术学院）；Punjab Agricultural University（旁遮普农业大学）；Tata Institute of Fundamental Research（塔塔基础研究院）；Dipartimento di Fisica, Università di Pisa（比萨大学物理系）
The silicon drift detectors are at the basis of the instrumentation aboard the Large Observatory For x-ray Timing (LOFT) satellite mission, which underwent a three year assessment phase within the "Cosmic Vision 2015 - 2025" long-term science plan of the European Space Agency. Silicon detectors are especially sensitive to the displacement damage, produced by the non ionising energy losses of charged and neutral particles, leading to an increase of the device leakage current and thus worsening the spectral resolution. During the LOFT assessment phase, we irradiated two silicon drift detectors w…
The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists of a pixel array with readout ASICs bump-bonded to a silicon sensor with pixels of 200 μm \times 200 μm. The particular requirements for the detector are a high dynamic range (0, 1 up to 10E5 12 keV p…
The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high brilliance X-ray pulses per second with duration less than 100 fs. The unique features of the X-ray beam pose major challenges for detectors used at the European XFEL for imaging experiments, in particular a radiation tolerance of silicon sensors for doses up to 1 GGy for 3 years of operation at an operating voltage above 500 V. One of the detectors under development at the European XFEL is the Adaptive Gain Integrating…
This paper reports on the design optimization done for Double Sided silicon microStrip Detectors(DSSDs) to reduce the Equivalent Noise Charge (ENC) and to maximize the breakdown voltage and Charge Collection Efficiency. Various isolation techniques have been explored and a detailed comparison has been studied to optimize the detector performance. For the evaluation of the performance of the silicon detectors, a radiation damage model has been included. The neutron fluence is expected to be 2x10^{13}n_{eq} cm$^{-2}$ per year for five years of expected CBM run with intermediate periods of warm m…
In this paper we discuss the use of linked thermal and electrical network models to predict the behaviour of a complex silicon detector system. We use the silicon strip detector for the ATLAS Phase-II upgrade to demonstrate the application of such a model and its performance. With this example, a thermo-electrical model is used to test design choices, validate specifications, predict key operational parameters such as cooling system requirements, and optimize operational aspects like the temperature profile over the lifetime of the experiment. The model can reveal insights into the interplay o…
Since the start of data taking in spring 2019 at the SuperKEKB collider (KEK, Japan) the Belle II Silicon Vertex Detector (SVD) has been operating reliably and with high efficiency, while providing high quality data: high signal-to-noise ratio, greater than 99% hit efficiency, and precise spatial resolution. These attributes, combined with stability over time, result in good tracking efficiency. Currently the occupancy, dominated by beam-background hits, is quite low (about 0.5% in the innermost layer), causing no problems to the SVD data reconstruction. In view of the operation at higher lumi…
In order to cope with increasing lifetime radiation damage expected at collider experiments, silicon sensors are becoming increasingly thin. To achieve adequate detection efficiency, the next generation of detectors may have to operate with thresholds below 1000 electron-hole pairs. The readout chips attached to these sensors should be calibrated to some known external charge, but there is a lack of traditional sources in this charge regime. We present a new method for absolute charge calibration based on Compton scattering. In the past, this method has been used for calibration of scintillato…
