The bulk displacement damage in the detector, produces effects at the device level that limits the long time utilisation of detectors as position sensitive devices and thus the lifetime of detector systems. So, the prediction of time behaviour of detectors in hostile radiation environments represents a very useful tool. In this contribution we predict the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC, for detectors fabricated from silicon crystals obtained by different growth technologies, in the frame of the model developed by the authors, and which takes into account the contribution of primary defects.
The e_LiBANS project aims at creating accelerator based compact neutron facilities for diverse interdisciplinary applications. After the successful setting up and characterization of a thermal neutron source based on a medical electron LINAC, a similar assembly for epithermal neutrons has been developed. The project is based on an Elekta 18 MV LINAC coupled with a photoconverter-moderator system which deploys the (γ,n) photonuclear reaction to convert a bremsstrahlung photon beam into a neutron field. This communication describes the development of novel diagnostics to qualify the thermal and …
Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using…
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. In this paper we present defect-spectroscopy measurements (Deep-Level Transient Spectroscopy and Thermally Stimulated Curren…
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance are presented. In particular, it is shown that the changes…
Facility for Antiproton and Ion Research in Europe（欧洲反质子与离子研究装置）
Optical inspection of 1191 silicon micro-strip sensors was performed using a custom made optical inspection setup, employing a machine-learning based approach for the defect analysis and subsequent quality assurance. Furthermore, metrological control of the sensor's surface was performed. In this manuscript, we present the analysis of various sensor surface defects. Among these are implant breaks, p-stop breaks, aluminium strip opens, aluminium strip shorts, surface scratches, double metallization layer defects, passivation layer defects, bias resistor defects as well as dust particle identifi…
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few $10^{14}$ cm$^{-2}$ and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280°C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occ…
University of Tübingen（图宾根大学）；GSI Helmholtzzentrum für Schwerionenforschung GmbH（亥姆霍兹重离子研究中心有限责任公司）
We describe a setup for optical quality assurance of silicon microstrip sensors. Pattern recognition algorithms were developed to analyze microscopic scans of the sensors for defects. It is shown that the software has a recognition and classification rate of $>$~90\% for defects like scratches, shorts, broken metal lines etc. We have demonstrated that advanced image processing based on neural network techniques is able to further improve the recognition and defect classification rate.
Nuclear recoils in crystal detectors generate radiation damage in the form of crystal defects that can be measured in scientific-grade CCDs as local hot spots of leakage current stimulated by temperature increases in the devices. In this proceeding, we use a neutron source to generate defects in DAMIC-M CCDs, and using increases in leakage current at different temperatures, we demonstrate a procedure for identifying crystal defects in the CCDs of the DAMIC-M experiment. This is the first time that individual defects generated from nuclear recoils have been studied. This technique could be used…
