Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.
Radiation effects on surface and bulk properties of ATLAS18 silicon sensors under low- and high-dose gamma irradiation and annealing
Institute of Physics, Academy of Sciences of the Czech Republic（捷克科学院物理研究所）；Santa Cruz Institute for Particle Physics (SCIPP)（圣克鲁斯粒子物理研究所）；UJP Praha a.s.（UJP布拉格有限公司）；Experimental Particle Physics Department, Jožef Stefan Institute（约瑟夫斯特凡研究所实验粒子物理部）；Instituto de Microelectronica de Barcelona (IMB-CNM), CSIC（西班牙国家科学研究委员会巴塞罗那微电子研究所）；Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK)（高能加速器研究机构粒子核研究部）；Physikalisches Institut, Albert-Ludwigs-Universität Freiburg（弗赖堡大学物理研究所）
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Φ_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performance in terms of collected charge and time resolution, were determined between the steps. It was found that the effect of annealing on timing resolution and collected charge is not very large and mainly …
Radiation Hardness of Commercially Available NUV-MT Silicon Photomultipliers
University of Hamburg（汉堡大学）；NCSR “Demokritos（德谟克利特国家研究中心）；Institute of Nuclear and Particle Physics（核与粒子物理研究所）；School of Physics and Astronomy, University of Birmingham（伯明翰大学物理与天文学学院）
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charge concentration $N_{\mathrm{eff}}$ was estimated from the dependence of depletion depth on bias voltage and studied as a function of neutron fluence. Dependence of $N_{\mathrm{eff}}$ on fluence change…
Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with different fluence levels. In this work, samples of different FBK SiPM technologies, made with different manufacturing technologies, were irradiated at the INFN-LNS facility (Italy) with protons reach…
Low dose gamma irradiation study of ATLAS ITk MD8 diodes
Institute of Physics, Czech Academy of Sciences（捷克科学院物理研究所）；Santa Cruz Institute for Particle Physics (SCIPP), University of California, Santa Cruz（加州大学圣克鲁兹分校粒子物理圣克鲁兹研究所）；Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK)（高能加速器研究机构粒子核研究）
