AI 中文总结
研究ATLAS18硅传感器在低剂量和高剂量伽马辐照及退火下的表面和体特性辐射效应，通过对分段微型条传感器和未分段MD8二极管的综合研究，包括多种测量及不同温度退火实验，全面呈现相关效应及热演化情况。
AI 中文摘要
用于HL-LHC的ATLAS内跟踪器（ITk）的硅条探测器必须承受恶劣的辐射条件，包括高达1.6E15 1 MeV n$_{eq}$/cm$^{2}$的通量和高达66 Mrad的总电离剂量（TID）。目前正在生产的ATLAS18硅条传感器采用抗辐射n+-in-p技术满足这些要求。这项工作对ATLAS18硅传感器中的伽马辐照效应进行了综合研究，包括在ATLAS18生产晶圆上制造的分段微型条传感器（minis）和未分段的MD8二极管。样品用$^{60}$Co伽马源辐照到0.5至100 krad之间的多个低TID，对应于ITk跟踪器早期运行阶段的剂量范围。还进行了高达几Mrad的额外测量以研究表面相关损伤效应的饱和情况。辐照后表征包括总、体和表面漏电流的测量，以及用于提取完全耗尽电压的电容-电压测量。使用80°C至300°C之间的等时退火和60°C及160°C的等温退火研究了辐射诱导缺陷的热稳定性。此外，还包括对辐照到数百Mrad超高剂量的MD8二极管的补充研究，远远超出ATLAS ITk的要求，以研究纯伽马辐照引起的可能的体相关效应及其退火行为。低剂量和超高剂量辐照的综合分析提供了ATLAS18硅传感器中表面和体相关伽马诱导效应及其热演化的全面图景。
英文摘要
Silicon strip detectors for the ATLAS Inner Tracker (ITk) at the HL-LHC must withstand harsh radiation conditions, including fluences of up to 1.6E15 1 MeV n$_{eq}$/cm$^{2}$ and total ionizing doses (TID) of up to 66 Mrad. These requirements are met using radiation-hard n+-in-p technology implemented in the ATLAS18 silicon strip sensors currently under production. This work presents a combined study of gamma-irradiation effects in ATLAS18 silicon sensors, including both segmented miniature strip sensors (minis) and unsegmented MD8 diodes fabricated on ATLAS18 production wafers. The samples were irradiated with a $^{60}$Co gamma source to multiple low TIDs between 0.5 and 100 krad, corresponding to the dose range relevant for the early operational phase of the ITk tracker. Additional measurements extending up to a few Mrad were performed to investigate the saturation of surface related damage effects. Post-irradiation characterization included measurements of total, bulk, and surface leakage currents, as well as capacitance-voltage measurements used to extract the full depletion voltage. The thermal stability of radiation-induced defects was studied using isochronal annealing between 80°C and 300°C and isothermal annealing at 60°C and 160°C. In addition, complementary studies of MD8 diodes irradiated to ultra-high doses of several hundred Mrad, well beyond the ATLAS ITk requirements, are included to investigate possible bulk-related effects induced by pure gamma irradiation and their annealing behavior. The combined analysis of low- and ultra-high-dose irradiation provides a comprehensive picture of surface- and bulk-related gamma-induced effects in ATLAS18 silicon sensors and their thermal evolution.
Journal refNucl. Instrum. Methods Phys. Res. A 1092 (2026) 171812
DOI：10.1016/j.nima.2026.171812
