砷化镓辐射探测器的辐射效应
The effects of radiation on Gallium Arsenide radiation detectors
摘要：
用1 MeV中子、24 GeV/c质子和300 MeV/c π介子辐照半绝缘、未掺杂、液封直拉（SI-U LEC）GaAs探测器。最大注量分别为6、3和1.8~10 $^{14}$粒子/cm $^{2}$。对于所有三种类型的照射，由于电子和空穴平均自由程的减少，检测器的电荷收集效率（cce）降低。π介子和质子辐照比中子辐照产生更大的cce减少，其中π介子的影响最大。在室温、200 $^{o}$ C和450 $^{o}$ C下用闪光灯退火探测器的效果已被证明可以减少漏电流并增加辐照探测器的cce。闪光灯退火通过增加电子的平均自由程，使cce从26%增加到70%。两个铟掺杂的样品用24 GeV/c质子辐照，并证明没有改善超过SI U GaAs相对于辐照后cce。
英文摘要：
Semi-insulating, undoped, Liquid Encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1MeV neutrons, 24GeV/c protons, and 300MeV/c pions. The maximum fluences used were 6, 3, and 1.8~10$^{14}$ particles/cm$^{2}$ respectively. For all three types of irradiation the charge collection efficiencies (cce) of the detector are reduced due to the reduction in the electron and hole mean free paths. Pion and proton irradiations produce a greater reduction in cce than neutron irradiation with the pions having the greatest effect. The effect of annealing the detectors at room temperature, at 200$^{o}$C and at 450$^{o}$C with a flash lamp have been shown to reduce the leakage current and increase the cce of the irradiated detectors. The flash-lamp anneal produced the greatest increase in the cce from 26% to 70% by increasing the mean free path of the electrons. Two indium-doped samples were irradiated with 24GeV/c protons and demonstrated no improvement over SI U GaAs with respect to post-irradiation cce.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
