M. Ferrero, R. Arcidiacono, M. Barozzi, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, Z. Galloway, M. Mandurrino, S. Mazza, G. Paternoster, F. Ficorella, L. Pa… 展开作者
M. Ferrero, R. Arcidiacono, M. Barozzi, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, Z. Galloway, M. Mandurrino, S. Mazza, G. Paternoster, F. Ficorella, L. Pancheri, H-F W. Sadrozinski, V. Sola, A. Staiano, A. Seiden, F. Siviero, M. Tornago, Y. Zhao
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to $ϕ_n \sim 3 \cdot 10^{16}\; n/cm^2$ and to proton fluences up to $ϕ_p \sim 9\cdot10^{15}\; p/cm^2$ to test their radiation resistance. The experimental results show that Gallium-doped LGADs are more heavily affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces initial acceptor removal both for Gallium and Boron doping. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more effective in producing initial acceptor removal, making proton irradiation far more damaging than neutron irradiation.
Investigating ultra-thin 4H-SiC AC-LGADs for superior radiation-hard timing applications
School of Physical Sciences, Indian Institute of Technology, Mandi（印度技术学院曼迪分校物理科学学院）；National Institute of Science Education and Research（国家科学教育研究中心）；Homi Bhabha National Institute（霍米·巴巴国立研究所）；Centre for Medical and Radiation Physics, National Institute of Science Education and Research（国家科学教育研究中心医学与辐射物理中心）
Systematic Investigation of Acceptor Removal in HPK LGADs with Modified Gain Layers
University of Tsukuba（筑波大学）；High Energy Accelerator Research Organization（高能加速器研究机构）；Leibniz University Hannover（汉诺威莱布尼茨大学）；The University of Osaka（大阪大学）；International Center for Elementary Particle Physics, The University of Tokyo（东京大学基础粒子物理国际中心）
Effects of Neutron Irradiation on LGADs with Broad Multiplication Layer and varied Carbon-Enriched Doses: A Study on Timing Performance and Gain Deterioration
Mortality of ultra-thin LGADs and PiN diodes from high energy deposition
Brookhaven National Laboratory（布鲁海文国家实验室）；Brown University（布朗大学）；Cheikh Anta Diop University（谢赫·安塔·迪奥普大学）；University of New Mexico（新墨西哥大学）；Stuyvesant High School（斯泰文森高中）
Proton Energy Dependence of Radiation Induced Low Gain Avalanche Detector Degradation
CERN, Organisation europénne pour la recherche nucléaire（欧洲核子研究组织）；TU Wien, Faculty of Physics（维也纳工业大学物理学院）；Instituto de Física de Cantabria, IFCA (CSIC-UC)（坎塔布里亚物理研究所）
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
Institute of Physics of the Czech Academy of Sciences（捷克科学院物理研究所）；onsemi（安森美）；Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague（布拉格捷克技术大学核科学与物理工程学院）
