Effect of deep gain layer and Carbon infusion on LGAD radiation hardness

基于TCT的ATLAS-HGTD生产中LGAD辐射硬度监测

TCT-based monitoring of LGAD radiation hardness for ATLAS-HGTD production

本文提出一种基于瞬态电流技术（TCT）的新测试方法，用于快速表征LGAD传感器辐射硬度，并结合电容-电压和90Sr电荷收集测量校准结果，为ATLAS-HGTD晶圆生产建立辐射硬度验收标准。

浅层碳与深层N++层对IHEP-IME LGAD传感器抗辐照性能的影响

Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

本文通过中子辐照实验比较W1、W7和W8三款IHEP-IME LGAD传感器，评估浅层碳与更深N++层对其抗辐照性能的影响。

HPK电容耦合LGAD（AC-LGAD）探测器的研制

Development of HPK Capacitive Coupled LGAD (AC-LGAD) detectors

本文报道与HPK合作研制电容耦合LGAD探测器，通过优化掺杂、厚度和耦合电容，实现100微米间距像素下30皮秒时间分辨率，并提出两种延缓受主移除的新思路以提升抗辐射硬度。

Radiation Hardness of Thin Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different produce…

4H-SiC LGAD在质子辐照后的研究

The study of 4H-SiC LGAD after proton radiation

本文研究了SiC低增益雪崩探测器SICAR在80 MeV质子辐照下的电学性能退化，结合XRD与C-DLTS表征并引入TCAD仿真，建立了与实验一致的线性缺陷通量退化模型。

Simulation of the 4H-SiC Low Gain Avalanche Diode

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness $d_{gain}=0.5~μm$ is adopted in our design. We design two different types of 4H-SiC LGAD which have…