商用近紫外金属填充沟槽（NUV-MT）硅光电倍增管的辐射硬度
Radiation Hardness of Commercially Available NUV-MT Silicon Photomultipliers
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中文总结 AI 辅助
本研究测试商用Broadcom AFBR-S4N系列NUV-MT SiPM的辐射硬度，发现1 MeV中子辐照会显著恶化其暗噪声和单光子分辨率，热退火可部分恢复性能。
中文摘要 AI 辅助
基于近紫外金属填充沟槽（NUV-MT）技术的硅光电倍增管（SiPM）相比早期设计具有更高的光子探测效率和更低的关联噪声，因此在广泛的粒子物理和天体粒子物理应用中颇具吸引力。由于这类器件可能部署在高辐射环境中，量化其受辐照后的性能至关重要。本研究在雅典的NCSR "Demokritos"的TANDEM加速器设施中，对商用Broadcom AFBR-S4N系列NUV-MT SiPM进行1 MeV中子辐照，注量范围为2×10^9至1.1×10^10 n_eq/cm²，并在辐照前、辐照后以及连续热退火阶段对其进行表征。辐照使暗噪声最多增加三个数量级，单光子分辨率最多降低一个数量级，在最高注量下分辨率完全丧失，同时未观察到击穿电压的偏移。热退火可部分恢复性能，使暗噪声最多降低一倍，并恢复单光子分辨率。
英文摘要
Silicon Photomultipliers (SiPMs) based on the near-ultraviolet, metal-filled trench (NUV-MT) technology offer improved photon detection efficiency and reduced correlated noise relative to earlier designs, making them attractive for a broad range of particle- and astroparticle-physics applications. As such devices may be deployed in high-radiation environments, quantifying their performance after irradiation is essential. Commercially available Broadcom AFBR-S4N series NUV-MT SiPMs were irradiated with 1 MeV neutrons to fluences between 2x10^{9} and 1.1x10^{10} n_{eq}/cm^2 at the TANDEM accelerator facility of NCSR "Demokritos" in Athens, and characterised before and after irradiation and over successive thermal-annealing stages. Irradiation increased the dark noise by up to three orders of magnitude and degraded the single-photon resolution by up to a factor of ten, with resolution lost entirely at the highest fluence, while no shift in breakdown voltage was observed. Thermal annealing partially recovered the performance, reducing the dark noise by up to a factor of two and restoring the single-photon resolution.
发表机构
- University of Hamburg（汉堡大学）
- NCSR “Demokritos（德谟克利特国家研究中心）
- Institute of Nuclear and Particle Physics（核与粒子物理研究所）
- School of Physics and Astronomy, University of Birmingham（伯明翰大学物理与天文学学院）
机构由 AI 辅助整理，请以论文原文为准。
