用简化唯象模型研究硅中辐射诱导缺陷的退火
Annealing of radiation induced defects in silicon in a simplified phenomenological model
摘要：
初级辐射引起的缺陷的浓度先前已估计考虑到两个明确的机制之间的主要相互作用的入射粒子和半导体晶格的原子核，和反冲能量之间的电离和位移的划分，在Lindhard理论的框架。主要的位移缺陷是空位和位错，它们在硅中基本上是不稳定的。它们通过迁移、复合、湮灭相互作用或产生其他缺陷。在目前的工作中，模拟的时间演化的缺陷的浓度由π介子在中，高电阻率硅探测器的辐照后。在某些近似下，表示时间演化过程的微分方程可以解耦。这样得到的理论方程解析求解在某些特定的情况下，与一个自由参数，为一个广泛的粒子注量和/或为一个广泛的能量范围内的入射粒子，对于不同的温度;相应的固定的解决方案也被提出。
英文摘要：
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials, that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of the incident particles, for different temperatures; the corresponding stationary solutions are also presented.
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