模拟高亮度辐射场中硅探测器缺陷的空间分布和电退化的估算
Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
摘要：
辐照是确定半导体缺陷特性的有用工具，也是评估其退化的方法，具有重要的技术后果。在这方面的贡献，从现有的数据在辐射场的硅探测器特性的退化，这些影响进行了解释的框架内的一个模型，假设也生产的SiFFCD缺陷，由于照射。位移阈值能量-不同的晶轴，被认为是模型的参数，建立和获得的结果可能有助于澄清这些有争议的方面。本文预测了在-10grdC加速器强子背景下，DOFZ硅探测器的电学参数（漏电流、有效载流子浓度和电子、空穴的有效俘获几率）的退化。初级缺陷和复合物的生产率的不均匀性，作为深度的函数，低动能的入射粒子，通过模拟在一些特定的和非常简化的假设，表明可能的重要贡献的低能量成分的背景光谱检测器退化。
英文摘要：
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
