使用聚焦keV离子对硅电子器件进行近表面电学表征
Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
AI总结：
本研究针对硅基量子计算大规模施主阵列的确定性制造需求，利用聚焦离子束系统与低噪声检测电子设备，实现了硅器件近表面电学特性的空间映射及高置信度的确定性离子注入，为无掩模施主阵列原型制备提供了新框架。
摘要：
容错阈值附近通用量子逻辑操作的演示，证实了离子注入的近表面施主原子是硅基可扩展量子计算的可行平台。下一步技术进展需要一种确定性制造方法来创建大规模施主阵列，其施主间距仅为几百纳米。本文通过将低能离子注入具有60×60 μm增大敏感区和3.2 nm超薄栅氧化层的硅器件中，探索了该方法的可行性——该器件可承载大规模施主阵列。通过将集成电子束离子源的聚焦离子束系统与真空内超低噪声离子检测电子设备相结合，我们首先展示了一种通用方法，可对浅注入12 keV ¹H₂⁺离子的器件响应特性进行空间映射。尽管内部电场较弱，但整个敏感区仍实现了接近1的电荷收集效率。这可以用高质量热栅氧化层在离子检测响应中的关键作用来解释，它使离子诱导的电荷能够从注入位点初始快速扩散开。接下来，我们调整了方法，在无需额外准直的情况下，将几千个24 keV ⁴⁰Ar²⁺离子确定性注入到预定义的微体积中。尽管较重离子种类的电离作用较弱，但仍获得了与注量无关的≥99.99%的检测置信度。因此，我们的系统不仅提供了一种绘制电子器件近表面电学分布的新方法，也是实现硅基大规模施主阵列无掩模原型制备的极具吸引力的框架。
英文摘要：
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore the feasibility of this approach by implanting low-energy ions into silicon devices featuring an enlarged 60x60 $μ$m sensitive area and an ultra-thin 3.2 nm gate oxide - capable of hosting large-scale donor arrays. By combining a focused ion beam system incorporating an electron-beam-ion-source with in-vacuum ultra-low noise ion detection electronics, we first demonstrate a versatile method to spatially map the device response characteristics to shallowly implanted 12 keV $^1$H$_2^+$ ions. Despite the weak internal electric field, near-unity charge collection efficiency is obtained from the entire sensitive area. This can be explained by the critical role that the high-quality thermal gate oxide plays in the ion detection response, allowing an initial rapid diffusion of ion induced charge away from the implant site. Next, we adapt our approach to perform deterministic implantation of a few thousand 24 keV $^{40}$Ar$^{2+}$ ions into a predefined micro-volume, without any additional collimation. Despite the reduced ionisation from the heavier ion species, a fluence-independent detection confidence of $\geq$99.99% was obtained. Our system thus represents not only a new method for mapping the near-surface electrical landscape of electronic devices, but also an attractive framework towards mask-free prototyping of large-scale donor arrays in silicon.
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