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arXiv physics/0611079physics.ins-dethep-ph
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未来超高能装置中硅探测器的预期退化分析

An Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities

Ionel Lazanu, Sorina Lazanu

摘要:

在这篇文章中,我们讨论了如何准备一些可能的探测器-只考虑硅的选择,为新时代的HEP的挑战,因为在探测器的体积位移损伤,辐射的后果,在设备水平上产生的影响,限制了他们的长期利用,增加漏电流和耗尽电位,最终击穿,从而影响探测器系统的寿命。本文从材料和器件两个层次分析了导致硅探测器退化的物理现象,并对在LHC机升级为SLHC、VLHC或ULHC时所预期的辐射环境中硅探测器的时间退化作了一些预测。在探测器水平的高能宇宙质子轰击后的可能影响进行了研究。这些设备参数的时间依赖性进行了研究,在连续照射的条件下,探测器材料的技术选择进行了讨论,以获得更难辐射的设备。

英文摘要:

In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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