硅传感器中电场的电光成像
Electro-optical imaging of electric fields in silicon sensors
摘要：
提出了一种利用光电成像技术测量硅探测器中电场的概念装置。它基于Franz-Keldysh效应，该效应描述了能量接近硅带隙的光吸收的电场依赖性。使用已发表的数据，估计测量精度为1至4 kV/cm。该装置旨在确定辐射损伤硅探测器中的电场，作为辐射通量和粒子类型、温度和偏置电压的函数。的整体概念和个别组件的设置。
英文摘要：
A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an energy close to the silicon band gap. Using published data, a measurement accuracy of 1 to 4 kV/cm is estimated. The set-up is intended for determining the electric field in radiation-damaged silicon detectors as a function of irradiation fluence and particle type, temperature and bias voltage. The overall concept and the individual components of the set-up are presented.
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