低电场下锗和硅晶体中电子的斜向传播
Oblique propagation of electrons in crystals of germanium and silicon at sub-Kelvin temperature in low electric fields
摘要：
我们表明，倾斜传播的Ge和Si的晶体中，电子的速度不遵循电场，即使在平均水平上的电子，可以解释使用标准的各向异性理论的间接间隙半导体。这些效应在低于~ 1 K的温度和低于~ 5 V/cm的电场下很明显，因为谷间跃迁被大力抑制，迫使电子在整个运动过程中保持在同一带谷中，并且谷在位置空间中分开。为了建模，我们从各向同性近似开始，该近似将晶体的平均特性与一个声子模式相结合，并通过变换到动量空间来包括椭球形电子谷，其中恒定能量表面是球体。我们包括模拟与测量的漂移速度的空穴和电子的比较，并解释在相邻电极的共享事件的电子和空穴之间的巨大差异。
英文摘要：
We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors. These effects are pronounced at temperatures below ~1K and for electric fields below ~5V/cm because inter-valley transitions are energetically suppressed forcing electrons to remain in the same band valley throughout their motion and the valleys to separate in position space. To model, we start with an isotropic approximation which incorporates the average properties of the crystals with one phonon mode, and include the ellipsoidal electron valleys by transforming into a momentum space where constant energy surfaces are spheres. We include comparisons of simulated versus measured drift velocities for holes and electrons, and explain the large discrepancy between electrons and holes for shared events in adjacent electrodes.
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