Monitoring radiation damage in the LHCb Tracker Turicensis
C. Abellan Beteta, M. Atzeni, V. Battista, A. Bursche, B. Dey, A. Dosil Suarez, C. Elsasser, A. Fernandez Prieto, J. Fu, E. Graverini, I. Komarov, E. Lemos Cid,… 展开作者
C. Abellan Beteta, M. Atzeni, V. Battista, A. Bursche, B. Dey, A. Dosil Suarez, C. Elsasser, A. Fernandez Prieto, J. Fu, E. Graverini, I. Komarov, E. Lemos Cid, F. Lionetto, A. Mauri, A. Merli, P. R. Pais, E. Perez Trigo, M. del Pilar Peco Regales, P. Stefko, O. Steinkamp, B. Storaci, M. Tobin, A. Weiden
This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were estimated at regular intervals by performing dedicated scans of the charge collection efficiency as a function of the applied bias voltage. Predictions of the expected leakage currents and full depletion voltages are extracted from the simulated radiation profile, the luminosity delivered by the LHC, and the thermal history of the silicon sensors. Good agreement between measurements and predictions is found.
Seeding and Matching algorithms for the first GPU-based High Level Trigger of the LHCb experiment
Sorbonne Université（索邦大学）；Universitat de Barcelona（巴塞罗那大学）；University of Valencia-CSIC（瓦伦西亚大学-西班牙国家研究委员会）；CERN, European Organization for Nuclear Research（欧洲核子研究中心）；École Polytechnique Fédérale de Lausanne (EPFL)（洛桑联邦理工学院）；Rutherford Appleton Laboratory (RAL)（卢瑟福阿普尔顿实验室）；Tsinghua University（清华大学）
Behavioral-Level Simulation of Digital Readout for COFFEE at LHCb Upstream Pixel Tracker
Nanjing University（南京大学）；Northwestern Polytechnical University（西北工业大学）；University of Chinese Academy of Sciences（中国科学院大学）；Shandong University（山东大学）；High Energy Physics Research Center of Henan Academy of Sciences（河南省科学院高能物理研究中心）
LF-MightyPix: A second HV-MAPS prototype for the {LHCb} Mighty-Tracker
Institute for Data Processing and Electronics, Karlsruhe Institute of Technology（数据处理与电子研究所，卡尔斯鲁厄理工学院）；Physikalisches Institute, University of Heidelberg（物理研究所，海德堡大学）
Testbeam studies of pre-prototype silicon strip sensors for the LHCb UT upgrade project
LHCb实验正准备在2018-2019年进行重大升级。升级的关键组件之一是位于实验分析磁体上游的新硅跟踪器。上游跟踪器（UT）将由硅条探测器的四个平面组成，每个平面覆盖约2 m $^2$的面积。这些探测器的一个重要考虑因素是它们在暴露于大辐射剂量后的性能。在这篇文章中，我们提出了预原型的n-in-p和p-in-n传感器，已被照射的能量密度高达$4.0\times10^{14}$ $n_{\rm eq}$ cm $^{-2}$的测试束结果。
