辐射诱导缺陷的模拟
Simulation of radiation-induced defects
摘要：
主要由于其出色的性能，位置敏感硅探测器被广泛用于高能物理实验的跟踪系统，如ALICE，ATLAS，CMS和LHC的LHCb，世界上最大的粒子物理加速器在欧洲核子研究中心，日内瓦。预计LHC将升级到其高光度（HL）阶段（计划于2023年进行HL-LHC），这将使该设施的物理潜力得到最大利用。运行10年后，预期的通量将使HL-LHC的跟踪系统暴露在超出当前系统设计能力的辐射环境中。因此，为了对全硅中央跟踪器进行必要的升级，RD 50协作组已开始对具有足够辐射耐受性的不同设计和材料的硅传感器进行广泛的测量和模拟研究。作为测量的补充，模拟对于例如器件结构优化或预测硅传感器中的电场和捕获起着至关重要的作用。RD 50合作中器件模拟的主要目标是开发一种使用专业软件对辐照硅探测器的性能进行建模和预测的方法。第一个成功开发的定量模型的辐射损伤，基于两个有效的midgap水平，能够重现实验观察到的探测器特性，如漏电流，全耗尽电压和电荷收集效率（CCE）。最近实施的额外的陷阱在SiO $_2$ /Si界面或接近它扩大了范围的实验同意模拟等表面性质的带间电阻和电容，和CCE的位置依赖性条传感器照射到$\sim$ $1.5\times10^{15}$ n $_{\textrm{eq}}\textrm{cm}^{-2}$。
英文摘要：
Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics accelerator at CERN, Geneva. The foreseen upgrade of the LHC to its high luminosity (HL) phase (HL-LHC scheduled for 2023), will enable the use of maximal physics potential of the facility. After 10 years of operation the expected fluence will expose the tracking systems at HL-LHC to a radiation environment that is beyond the capacity of the present system design. Thus, for the required upgrade of the all-silicon central trackers extensive measurements and simulation studies for silicon sensors of different designs and materials with sufficient radiation tolerance have been initiated within the RD50 Collaboration. Supplementing measurements, simulations are in vital role for e.g. device structure optimization or predicting the electric fields and trapping in the silicon sensors. The main objective of the device simulations in the RD50 Collaboration is to develop an approach to model and predict the performance of the irradiated silicon detectors using professional software. The first successfully developed quantitative models for radiation damage, based on two effective midgap levels, are able to reproduce the experimentally observed detector characteristics like leakage current, full depletion voltage and charge collection efficiency (CCE). Recent implementations of additional traps at the SiO$_2$/Si interface or close to it have expanded the scope of the experimentally agreeing simulations to such surface properties as the interstrip resistance and capacitance, and the position dependency of CCE for strip sensors irradiated up to $\sim$$1.5\times10^{15}$ n$_{\textrm{eq}}\textrm{cm}^{-2}$.
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