SrTiO3 thin films, 20-30nm, with high quality crystal structure and low roughness can be used as growth templates for complex oxides or as the dielectric materials for capacitor structures. In this work, stoichiometric STO thin films were grown by radio frequency magnetron sputtering on Pt (111) templates grown on rAl2O3 substrates, and the effects of growth parameters as well as the underlying Pt templates structural properties on the quality of STO films were studied. A comparison between room temp grown Pt and Pt grown at elevated temps showed that the latter lead to highly ordered Pt and STO films with quasi 2D surface roughness. Xray diffraction showed that the STO thin films had (111) and (222) crystal orientation. A rocking curve full width at half maximum value of 0.2° was achieved, indicating that the STO films are high-quality. The STO films have a roughness less than 1 nm, as measured using atomic force microscopy, comparable to the underlying Pt templates roughness.
Synthesis and characterization of dense Gd2Ti2O7 pyrochlore thin films deposited using RF magnetron sputtering
采用射频磁控溅射法制备了纯相的焦绿石型Gd 2 Ti 2 O 7薄膜。在50%O_2/Ar气氛中，用氧化物靶在800 ℃下沉积在111 YSZ衬底上。烧绿石结构通过掠角X射线衍射和选区电子衍射（SAED）确认。TEM分析表明，薄膜致密，厚度均匀，表面粗糙度约为8 nm。与交流阻抗谱测量的总电导率被发现是独立的厚度和可比的散装Gd 2 Ti 2 O 7的幅度。观察到本体和薄膜样品之间的Arrhenius行为的差异，并归因于不同水平的背景杂质。
The investigations of the reactive magnetron depositing of the stoichiometric coatings metal-metalloid were done. The dependences between sputtering parameters of a target and processes of plasmochemical formation on the surface of sample metal-metalloid and formations of coatings of the appropriate structure were investigated. Experimental data on stoichiometric coatings AlN, Al2O3, TiN, TiO2 is given. Features of reactive magnetron deposition and investigation results for obtaining of coatings with pregiven properties in particular for providing stability and controllability of coating depos…
In-situ Polarized Neutron Reflectometry: Epitaxial Thin Film Growth of Fe on Cu(001) by DC Magnetron Sputtering
本文报道了用原位极化中子反射法研究Fe在Cu（001）/Si（001）上外延生长的实验结果。溅射沉积系统集成到瑞士中子溅射源SINQ的中子反射计AMOR中，这使得能够分析Fe层的所有沉积步骤期间的微观结构和磁矩。我们报告的渐进演变的可访问的参数描述的微观结构和磁性的Fe膜，再现已知的功能和扩展我们的知识的行为的Fe 3 O 4铁膜。
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by MBE consists of Mn- and Co-rich phases, the structures of which are determined to be the L21B-type and disordered L21-type, respectively, according to anomalous XRD analysis. None of them forms the XA-type structure exp…
As2S3 film doped with erbium is prepared using multi-layer magnetron sputtering. The optical properties were measured by reflectance spectroscopy, and its chemical composition is examined by x-ray photoelectron, Rutherford backscattering, and Raman spectroscopy. The results show that the refractive index and absorption coefficient follow closely to a sputtered As2S3 film, and there are no detectable Er-S clusters and photo-induced As2O3 in the film. Rutherford backscattering spectroscopy shows that the film is homogeneous, and revealed the concentration level of erbium, and the stoichiometry o…
Effect of annealing in the formation of well crystallized and textured SrFe$_{12}$O$_{19}$ films grown by RF magnetron sputtering
Instituto de Química Física “Rocasolano”, CSIC（罗卡索拉诺物理化学研究所，西班牙国家研究委员会）；Instituto de Cerámica y Vidrio, CSIC（陶瓷与玻璃研究所，西班牙国家研究委员会）；Alba Synchrotron Light Facility, CELLS（阿尔巴同步辐射光源，加泰罗尼亚高等研究理事会）
We study the microstructure and magnetic properties of Ni80Fe20 thin films grown by high power impulse magnetron sputtering (HiPIMS), and compare with films grown by dc magnetron sputtering (dcMS). The films were grown under a tilt angle of 35° to identical thickness of 37 nm using both techniques, at different pressure (0.13-0.73 Pa) and substrate temperature (room temperature and 100 °C). All of our films display effective in-plane uniaxial anisotropy with square easy axis and linear hard axis magnetization traces. X-ray diffraction reveals that there is very little change in grain size with…
A combinatorial thin-film synthesis approach combined with a high throughput analysis methodology was successfully applied to synthesize TiN/Ni coatings with optimum mechanical properties. The synthesis approach consists of the deposition of TiN/Ni coatings with the Ni content ranging from around 0 to 20 at.%. by reactive magnetron sputtering with a well-defined composition gradient, so that almost all possible compositions are produced in one single coating under identical conditions, removing uncertainties from processing conditions. The analysis methodology continuously screened the microst…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films gro…
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural, optical, and electrical properties respectively. Deposition is carried out at room temperature and between 200 and 300 °C. XRD analysis indicates that the oxide formed is primarily Cu$_2$O and the a…
An Automated Magnetron Sputtering Chamber for Ferroelectric Thin Film Deposition
Materials Research Institute, The Pennsylvania State University（宾夕法尼亚州立大学材料研究所）；Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
On Tailoring Structural and Optoelectronic Properties of TiO2 Thin Films Synthesized via 'Room' Temperature High Power Impulse Magnetron Sputtering (HiPIMS)
Magnetic field strength influence on the reactive magnetron sputter deposition of Ta2O5
反应磁控溅射使得能够沉积各种薄膜以用于保护以及光学和电子应用。然而，在溅射期间进行的靶侵蚀导致靶表面处的磁场强度增加。因此，辉光放电，靶中毒，并因此所制备的薄膜的形态，晶体结构和化学计量的影响。因此，通过在0.50和1.00 A之间改变阴极电流Im，在45和90 mT之间改变磁场强度B，以及在0和100%之间改变O2/（Ar+O2）流速比来研究这些效应。随着氧气流量比的增加，在金属Ta靶表面形成亚化学计量的TaOx氧化物，其进一步转移到非导电的五氧化二钽Ta 2 O 5，阻碍稳定的DC辉光放电。这两个过渡区（从Ta到TaOx和从TaOx到Ta 2 O 5）转变为更高的氧气流速以增加靶电流。相反，增加磁场强度（例如，由于溅射腐蚀）主要将TaOx到Ta 2 O 5的转变转变为较低的氧气流速，同时略微影响Ta到TaOx的转变。为了即使在100%的流量比下也能够稳定地进行DC辉光放电（并且抑制在靶处形成非导电性Ta 2 O 5），需要高的靶电流（Im ≥ 1 A）或低的磁场强度（B ≤ 60 mT）。需要这些条件来制备化学计量和完全结晶的Ta 2 O 5膜。我们的调查清楚地表明，磁场强度的重要性，在溅射腐蚀过程中的变化，对靶中毒和由此产生的薄膜质量。
In this work, amorphous thin films in Mg-Si-O-N system were prepared in order to investigate the dependence of optical and mechanical properties on Mg composition. Reactive RF magnetron co-sputtering from magnesium and silicon targets were used for the deposition of Mg-Si-O-N thin films. Films were deposited on float glass, silica wafers and sapphire substrates in an Ar, N2 and O2 gas mixture. X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, spectroscopic ellipsometry, and nanoindentation were employed to characterize the composition, surface morphology,…
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by combining EDSX and electron probe micro analysis (EPMA) results on reference samples. It secondly presents the relative PL intensities of nanocrystallized samples prepared with identical sputtering p…
Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
Copper deposition has been carried out at various time span on glass slide and silicon substrate by using indigenously developed unbalanced type DC magnetron sputtering system. The main objective of this work is to study the crystalline structure of the deposited materials and also to calculate the crystallite grain size. As a transition metal, Copper nano-particles and structures have several utilities in the field of photo-catalytic and sensor applications. Such structures are utilized to provide free electrons that enhance optical and electrical properties of the photo-catalytic sensor mate…
The effect of applying a positive voltage pulse (Urev = 10 - 150 V) directly after the negative high power impulse magnetron sputtering (HiPIMS) pulse (bipolar HiPIMS) is investigated for the reactive sputter deposition of TiN thin films. Energy-resolved mass spectroscopy analyses are performed to gain insight in the effect on the ion energy distribution function of the various ions. It is demonstrated that the energy of a large fraction of the ions can be tuned by a reverse target potential and gain energy corresponding to the applied Urev. Microscopy observations and x-ray reflectometry reve…
Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated …
A transfer-rod-mounted rotatable sample holder enabling a compact modular vacuum system for ion-beam milling, oblique magnetron sputtering, and co-sputtering
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma working pressure and the radio frequency power. Systematic analysis of cross views of the films allowed the authors to draw a microstructure/process parameters map. Four microstructural types were disting…
Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al2O3. The microstructure changes from large columnar faceted grains for α-V2O3 to smaller equiaxed grains whe…
Two dimensional materials are an emerging class of materials which is transforming the present day research activity on a phenomenal scale. Hexagonal boron nitride is a wide band gap 2D material which is an excellent substrate for graphene based electronics. To achieve the full potential of hBN scalable and high yield growth procedures are required. Here, we demonstrate the synthesis of hBN by reactive R.F magnetron sputtering over copper foil. Copper foil preparation conditions determines the phase selectivity of BN films. Deposition of hBN on non-electropolished Cu foils with predominant (10…
Potentially superhard $W_{1-x}Zr_xB_2$ polymorph hP6-P6$_3$/mmc-$WB_2$ with zirconium doping in the range of x=0.0-0.25 was thoroughly analyzed within the framework of first-principles density functional theory from the structural and mechanical point of view. The obtained results were subsequently compared with properties of material deposited by magnetron sputtering method. All predicted structures are mechanically and thermodynamically stable. Due to theoretical calculations zirconium doping reduces hardness and fracture toughness $K_{IC}$ of $WB_2$. Deposited films are characterized by gre…
