本文提出利用高压磁控溅射在 SrTiO3 衬底上一步外延生长高迁移率 La 掺杂 BaSnO3 薄膜，室温迁移率达 121 cm2V-1s-1，为透明电子学提供了一种简便经济的大规模制备途径。
摘要：
作为一种独特的钙钛矿型透明氧化物半导体，高迁移率 La 掺杂 BaSnO3 薄膜已通过分子束外延和脉冲激光沉积成功合成。然而，对于磁控溅射这一广泛适用且适合大规模制备的技术而言，生长高迁移率 La 掺杂 BaSnO3 薄膜仍然是一个重大挑战。在此，我们开发了一种利用高压磁控溅射在 SrTiO3 单晶衬底上直接合成高迁移率外延 La 掺杂 BaSnO3 薄膜的方法（室温下载流子密度约为 4.0 x 10^20 cm-3 时迁移率高达 121 cm2V-1s-1）。通过结合高分辨 X 射线衍射、X 射线光电子能谱和温度依赖的电输运测量，对 La 掺杂 BaSnO3 薄膜的结构和电学性质进行了表征。本工作中 La 掺杂 BaSnO3 薄膜的室温电子迁移率比已报道的磁控溅射生长薄膜的数值高 2 至 4 倍。此外，在高载流子密度范围（n > 3 x 10^20 cm-3）内，我们工作中 121 cm2V-1s-1 的电子迁移率值在所有已报道的掺杂 BaSnO3 薄膜中处于最高水平之列。研究揭示，溅射过程中的高氩气压在稳定完全弛豫薄膜和诱导氧空位方面起着关键作用，这有利于实现高室温迁移率。我们的工作为透明电子学领域大规模合成高迁移率透明导电薄膜提供了一种简便且经济的方法。
英文摘要：
As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm2V-1s-1 at the carrier density ~ 4.0 x 10^20 cm-3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 x 10^20 cm-3), the electron mobility value of 121 cm2V-1s-1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.
Synthesis and characterization of dense Gd2Ti2O7 pyrochlore thin films deposited using RF magnetron sputtering
采用射频磁控溅射法制备了纯相的焦绿石型Gd 2 Ti 2 O 7薄膜。在50%O_2/Ar气氛中，用氧化物靶在800 ℃下沉积在111 YSZ衬底上。烧绿石结构通过掠角X射线衍射和选区电子衍射（SAED）确认。TEM分析表明，薄膜致密，厚度均匀，表面粗糙度约为8 nm。与交流阻抗谱测量的总电导率被发现是独立的厚度和可比的散装Gd 2 Ti 2 O 7的幅度。观察到本体和薄膜样品之间的Arrhenius行为的差异，并归因于不同水平的背景杂质。
In-situ Polarized Neutron Reflectometry: Epitaxial Thin Film Growth of Fe on Cu(001) by DC Magnetron Sputtering
本文报道了用原位极化中子反射法研究Fe在Cu（001）/Si（001）上外延生长的实验结果。溅射沉积系统集成到瑞士中子溅射源SINQ的中子反射计AMOR中，这使得能够分析Fe层的所有沉积步骤期间的微观结构和磁矩。我们报告的渐进演变的可访问的参数描述的微观结构和磁性的Fe膜，再现已知的功能和扩展我们的知识的行为的Fe 3 O 4铁膜。
Effect of annealing in the formation of well crystallized and textured SrFe$_{12}$O$_{19}$ films grown by RF magnetron sputtering
Instituto de Química Física “Rocasolano”, CSIC（罗卡索拉诺物理化学研究所，西班牙国家研究委员会）；Instituto de Cerámica y Vidrio, CSIC（陶瓷与玻璃研究所，西班牙国家研究委员会）；Alba Synchrotron Light Facility, CELLS（阿尔巴同步辐射光源，加泰罗尼亚高等研究理事会）
An Automated Magnetron Sputtering Chamber for Ferroelectric Thin Film Deposition
Materials Research Institute, The Pennsylvania State University（宾夕法尼亚州立大学材料研究所）；Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
On Tailoring Structural and Optoelectronic Properties of TiO2 Thin Films Synthesized via 'Room' Temperature High Power Impulse Magnetron Sputtering (HiPIMS)
Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
A transfer-rod-mounted rotatable sample holder enabling a compact modular vacuum system for ion-beam milling, oblique magnetron sputtering, and co-sputtering
Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
The role of ionization fraction on the surface roughness, density and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering and HiPIMS: An atomistic simulation
Single-crystalline CrSb(0001) thin films grown by dc magnetron co-sputtering
Institute of Physics, Czech Academy of Sciences（捷克科学院物理研究所）；University of Regensburg（雷根斯堡大学）；Norwegian University of Science and Technology (NTNU)（挪威科技大学）；ETH Zurich（苏黎世联邦理工学院）；Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen（哥本哈根大学尼尔斯·玻尔研究所量子器件中心）；Research Institute of Electrical Communication, Tohoku University（东北大学电气通信研究所）；Tohoku University（东北大学）；Charles University（查理大学）；Czech Technical University in Prague（布拉格捷克理工大学）；University of Nottingham（诺丁汉大学）
Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering
TaN薄膜是[FeN/TaN]（n）多层膜中的一种有吸引力的中间层和扩散阻挡层，在高密度磁纪录中具有潜在的应用前景。采用反应射频溅射法，在不同的N-2分压下，在5 mAr/N-2气氛下，分别在玻璃和Si衬底上制备了两个系列的TaN薄膜，并对薄膜进行了系统的表征分析。当N2分压从0.0%增加到30%时，薄膜中的相发生了明显的变化，从bcc结构的Ta转变为bcc结构的Ta（N）和六方结构的Ta_2N的混合相，然后依次转变为fcc结构的TaN和TaN与富N相的混合相。这些变化与晶粒形状以及薄膜的择优晶向的变化有关，从bcc Ta [100]到[110]，然后到随机，最后到fcc TaN [111]。在77-295 K范围内，它们还与薄膜电阻率从金属到类超导体行为的变化有关。薄膜呈现典型的多晶织构结构，具有小的结晶畴和不规则的晶粒形状。在薄膜中观察到平行于衬底表面的清晰的优选（111）堆叠，其中嵌入有非晶区。在25%N-2分压下获得了电阻率为6.0m Ω cm、具有[ 111]择优取向的TaN薄膜，可作为[FeN/TaN]（n）多层膜的中间层。
