直流磁控溅射法制备TiZrV-Pd薄膜及其表征
Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering
摘要：
TiZrV薄膜主要应用于储存环的超高真空管道。采用直流磁控溅射法，以氩气为溅射气体，在TiZrV薄膜上镀制了一层钯薄膜，以提高吸气剂的使用寿命和抽气速度。采用原子力显微镜（AFM）、扫描电子显微镜（SEM）、X射线光电子能谱学（XPS）和X射线衍射（XRD）等测试手段对TiZrV-Pd薄膜的性能进行了研究。TiZrV和Pd薄膜的晶粒尺寸分别为0.42~ 1.3nm和8.5~ 18.25nm。结果表明，TiZrV薄膜的粗糙度较小，约为2~4 nm，而Pd薄膜的粗糙度较大，约为17~19 nm。PP At.根据XPS测试结果，TiZrV/Pd膜中的Pd %从86.84变化到87.56。
英文摘要：
TiZrV film is mainly applied in the ultra-high vacuum pipe of storage ring. Thin film coatings of palladium which was added onto the TiZrV film to increase the service life of nonevaporable getters and enhance pumping speed for H2, was deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd film were about 0.42~1.3 nm and 8.5~18.25 nm respectively. It was found that the roughness of TiZrV films was small, about 2~4 nm, for Pd film it is large, about 17~19 nm. PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.
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