NbN films were deposited on SS substrates by reactive DC magnetron sputtering at various N2 flow rates and substrate biasing. Effect of N2 flow rate and substrate biasing has been studied on deposition rate, surface hardness, crystal-structure and adhesion values. Process parameters were optimized for deposition of NbN coatings. NbN coatings were then deposited on to MS substrates as such and with Nb interlayer deposited by magnetron sputtering. The thickness of interlayer was 2 \mum. The duplex coating has been studied for the improvement with respect to surface hardness by Knoop micro indentation and corrosion performance by potentiodynamic polarization technique. Open circuit potentials were also measured.
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films gro…
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural, optical, and electrical properties respectively. Deposition is carried out at room temperature and between 200 and 300 °C. XRD analysis indicates that the oxide formed is primarily Cu$_2$O and the a…
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma working pressure and the radio frequency power. Systematic analysis of cross views of the films allowed the authors to draw a microstructure/process parameters map. Four microstructural types were disting…
The chemical composition and structural state of advanced alloys are the decisive factors in optimum biomedical performance. This contribution presents unique Ti-Zr-Ge metallic glass thin-film compositions fabricated by magnetron sputter deposition targeted for nanocoatings for biofouling prevention. The amorphous nanofilms with nanoscale roughness exhibit a large relaxation and supercooled liquid regions as revealed by flash differential scanning calorimetry. Ti\textsubscript{68}Zr\textsubscript{8}Ge\textsubscript{24} shows the lowest corrosion (0.17 \textmu A cm\textsuperscript{\textminus2})…
Potentially superhard $W_{1-x}Zr_xB_2$ polymorph hP6-P6$_3$/mmc-$WB_2$ with zirconium doping in the range of x=0.0-0.25 was thoroughly analyzed within the framework of first-principles density functional theory from the structural and mechanical point of view. The obtained results were subsequently compared with properties of material deposited by magnetron sputtering method. All predicted structures are mechanically and thermodynamically stable. Due to theoretical calculations zirconium doping reduces hardness and fracture toughness $K_{IC}$ of $WB_2$. Deposited films are characterized by gre…
Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al2O3. The microstructure changes from large columnar faceted grains for α-V2O3 to smaller equiaxed grains whe…
Electrochromic materials change color reversibly by applying an external DC voltage. One among the many emerging application of electro-chromics is the smart windows. The coloration efficiency, the optical colour modulation and the cyclability are the factors that bench mark the device. Tungsten oxide (WO3-x) is versatile material and reactive DC magnetron sputtering (with argon as sputter gas) technique is common for electro-chromics. In the present communication we have prepared tungsten oxide thin films by reactive DC magnetron sputtering technique (at room temperature 300 K) using Neon as …
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual stress of these films was calculated by sin2 technique and found that they are varying from tensile to compression with temperature (Ts). Evolution of crystalline growth of AlN films was studied by GIXRD and transmission electron microscopy (TEM) and a preferred a-axis orientation was observed at 400 ?C. The cross-sectional TEM micrograph and selected area elect…
We report the uniaxial anisotropic optical constants of Wurtzite type AlN films deposited on Si (100) substrate using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 C). Evolution of optical properties with Ts is investigated by Spectroscopic Ellipsometry (SE) technique. Thickness and roughness of these films are determined from the regression analysis of SE data, which are corroborated using TEM and AFM technique. Highly a-axis oriented AlN film grown at 400 C, exhibits high n and low k at 210 nm (deep-UV region) with a small birefringence and dichroism nea…
Rock-salt type niobium nitride ($δ$-NbN) is a well-known superconductor having superconducting transition temperature (Tc) $\approx$ 18\,K and a large superconducting gap $\approx$3\,meV. The Tc of $δ$-NbN thin film exhibits a large scattering irrespective of the growth conditions and lattice parameter. In this work, we investigate the atomic origin of suppression of Tc in $δ$-NbN thin film by employing combined methods of experiments and ab-initio simulations. Sputtered $δ$-NbN thin films with different disorder were analyzed through electrical resistivity and x-ray absorption spectroscopy. A…
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear …
We report the structural, magnetic, and interfacial spin transport properties of epitaxial terbium iron garnet (TbIG) ultrathin films deposited by magnetron sputtering. High crystallinity was achieved by growing the films on gadolinium gallium garnet (GGG) substrates either at high temperature, or at room temperature followed by thermal annealing, above 750 °C in both cases. The films display large perpendicular magnetic anisotropy (PMA) induced by compressive strain, and tunable structural and magnetic properties through growth conditions or the substrate lattice parameter choice. The ferrima…
As2S3 film doped with erbium is prepared using multi-layer magnetron sputtering. The optical properties were measured by reflectance spectroscopy, and its chemical composition is examined by x-ray photoelectron, Rutherford backscattering, and Raman spectroscopy. The results show that the refractive index and absorption coefficient follow closely to a sputtered As2S3 film, and there are no detectable Er-S clusters and photo-induced As2O3 in the film. Rutherford backscattering spectroscopy shows that the film is homogeneous, and revealed the concentration level of erbium, and the stoichiometry o…
Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work a systematic study of PMN-PT thin films grown on LCMO buffered platinized glass substrates has been undertaken. The films were grown at room temperature using RF magnetron sputtering. Single phase PMN-PT films could be obtained by exsitu thermal annealing in air for 2h at temperatures 550 and 650 degree C. The films annealed at temperatures lower than 550 d…
From Deposition Stress to Surface Reactivity: Strain-Dependent Hydrogen Evolution on Sputtered Platinum Thin Films
Ruhr-University Bochum（波鸿鲁尔大学）；University Duisburg-Essen（杜伊斯堡-埃森大学）；Center for Interface-Dominated High Performance Materials, (ZGH) Ruhr-University Bochum（波鸿鲁尔大学界面主导高性能材料中心）；University of Copenhagen（哥本哈根大学）
Nickel nitride (Ni-N) thin film samples were deposited using reactive magnetron sputtering process utilizing different partial flow of N2 (RN2). They were characterized using x-ray reflectivity (XRR), x-ray diffraction (XRD) and x-ray absorption near edge spectroscopy (XANES) taken at N K-edge and Ni L-edges. From XRR measurements, we find that the deposition rate and the density of Ni-N films decrease due to successively progression in RN2, signifying that Ni-N alloys and compounds are forming both at Ni target surface and also within the thin film samples. The crystal structure obtained from…
Spin current injection from sputtered yttrium iron garnet (YIG) films into an adjacent platinum layer has been investigated by means of the spin pumping and the spin Seebeck effects. Films with a thickness of 83 and 96 nanometers were fabricated by on-axis magnetron rf sputtering at room temperature and subsequent post-annealing. From the frequency dependence of the ferromagnetic resonance linewidth, the damping constant has been estimated to be $(7.0\pm1.0)\times 10^{-4}$. Magnitudes of the spin current generated by the spin pumping and the spin Seebeck effect are of the same order as values …
A reentrant temperature dependence of the thermoresistivity $ρ_{\mathrm{xx}}(T)$ between an onset local superconducting ordering temperature $T_\mathrm{loc}^\mathrm{onset}$ and a global superconducting transition at $T=T_\mathrm{glo}^\mathrm{offset}$ has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic prope…
The PTFE (Teflon) has been selected as the self-template structural material in preparation of VO2 films using reactive magnetron sputtering systems and post annealing progress. Spontaneous random nano-porous structures of VO2 films growing on quartz glasses have been deliberately established via bottom-up processing through this novel and facile approach. The nano-porous VO2 films exhibit an excellent optical performance based on localized surface plasmon resonance (LSPR), with ultrahigh luminous transmittance (Tlum) up to 78.0% and the promoted solar modulation ability (ΔTsol) of 14.1%. Mean…
Monophasic and homogeneous Ni10Zr7 nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range crystallographic and chemical order in the alloy, thus overcoming the widely acknowledged inherent proclivity of the glass forming Ni-Zr couple towards amorphization. Crystallinity of these alloys is a desirable feature with regard to improved efficacy in applications such as hydrogen storage, catalytic activity and nuclear reactor engineering, to name a few…
We have investigated the structural and magnetic properties of BiFeO$_3$ (BFO) thin films grown over (100)-oriented Si substrates by rf magnetron sputtering in a new route under O$_2$ free low pressure Ar atmosphere. Single-phase BFO films were deposited in a heated substrate and post-annealed in situ. The new routed allows high deposition rate and produce polycrystalline BFO pure phase, confirmed by high resolution X-ray diffraction. Scanning electron and atomic force microscopy reveal very low surface roughness and mean particle size of 33 nm. The BFO phase and composition were confirmed by …
Si-doped GaN films were grown on $\textit{c}$-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N$_2$ in Ar-N2 growth atmosphere and their epitaxial character was ascertained by phi-scans. Energy dispersive x-ray spectroscopy revealed $\thicksim$2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N$_2$ percentage was reduced from 100% to 10%. High resolution x-ray diffraction revealed the dominant presence of edge dislocations ($\thicksim$10$^{12}$ cm$^{-2}$) in the films grown at 30% - 100% N$_2$, which decreased to $\thicksim…
The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystalline order has not been explored. Here, we choose a typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues by investigating its ferromagnetism in an amorphous state. We have fabricate…
We studied the structural and magnetic properties of \FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (\Ts) of 300, 523 and 773\,K. The structure and morphology was measured using x-ray diffraction (XRD), x-ray absorption near edge spectroscopy (XANES) at Fe $L$ and C $K$-edges and atomic/magnetic force microscopy (AFM, MFM), respectively. An ultrathin (3\,nm) $^{57}$\FeC~layer, placed between relatively thick \FeC~layers was used to estimate Fe self-diffusion taking place during growth at differen…
The vacuum chamber of accelerator storage ring need clean ultra-high vacuum environment. TiZrV getter film which was deposited on interior wall of vacuum chamber, can realize distributed pumping, effectively improve the vacuum degree and reduce the longitudinal gradient. But accumulation of pollutants such as N2, O2, will decrease the adsorption ability of non-evaporable getter (NEG), which leads to the reduction of NEG lifetime. Therefore, NEG thin film coated with a layer of Pd which has high diffusion rate and absorption ability for H2, can extend the service life of NEG, and improve the pu…
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick epitaxial HfN layers are grown on MgO(001) by reactive high-impulse magnetron sputtering (HiPIMS) with no external substrate heating. Maximum film growth temperatures Ts due to plasma heating range from 70-150 °C, corresponding to Ts/Tm = 0.10-0.12 (in which Tm is the HfN melting point in K). During HiPIMS, gas and sputtered-metal ion fluxes incident at the growi…
Ultrathin bismuth-yttrium iron garnet films with tunable magnetic anisotropy
ETH Zurich（苏黎世联邦理工学院）；Université Grenoble Alpes, CNRS, Institut Néel（格勒诺布尔阿尔卑斯大学，法国国家科学研究中心，内耳研究所）；Kyoto University（京都大学）；University of Konstanz（康斯坦茨大学）；Instituto de Nanociencia y Materiales de Aragón, CSIC（阿拉贡纳米科学与材料研究所，西班牙国家研究委员会）；Universidad de Zaragoza（萨拉戈萨大学）
