反应溅射氮化镍薄膜的研究
Study of Reactively Sputtered Nickel Nitride Thin Films
摘要：
采用反应磁控溅射工艺，利用不同的N2分流量制备了Ni-N薄膜样品。它们的特征在于使用X射线反射率（XRR），X射线衍射（XRD）和X射线吸收近边光谱（XANES）采取在N K-边缘和Ni L-边缘。通过XRR测量发现，由于在RN 2中的连续进展，Ni-N薄膜的沉积速率和密度降低，这意味着在Ni靶表面和薄膜样品内部都有Ni-N合金和化合物形成。从XRD测量获得的晶体结构表明由Ni、Ni（N）、Ni 4 N、Ni 3 N和Ni 2N给出的不同Ni-N化合物的演变，其中RN 2逐渐升高。XANES测量进一步证实了这些相，与XRD结果一致。极化中子反射率测量进行探测的磁化，它被发现Ni-N薄膜成为非磁性，即使当N掺入增加超过几个原子%。比较了Ni-N样品与Fe-N和Co-N体系的生长行为，发现它们之间既有相似之处，也有不同之处。
英文摘要：
Nickel nitride (Ni-N) thin film samples were deposited using reactive magnetron sputtering process utilizing different partial flow of N2 (RN2). They were characterized using x-ray reflectivity (XRR), x-ray diffraction (XRD) and x-ray absorption near edge spectroscopy (XANES) taken at N K-edge and Ni L-edges. From XRR measurements, we find that the deposition rate and the density of Ni-N films decrease due to successively progression in RN2, signifying that Ni-N alloys and compounds are forming both at Ni target surface and also within the thin film samples. The crystal structure obtained from XRD measurements suggest an evolution of different Ni-N compounds given by: Ni, Ni(N), Ni4N, Ni3N, and Ni2N with a gradual rise in RN2. XANES measurements further confirm these phases, in agreement with XRD results. Polarized neutron reflectivity measurements were performed to probe the magnetization, and it was found Ni-N thin films become non-magnetic even when N incorporation increases beyond few at%. Overall growth behavior of Ni-N samples has been compared with that of rather well-known Fe-N and Co-N systems, yielding similarities and differences among them.
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