毫秒级闪光灯退火实现低电阻率氮掺杂p型Cu₂O薄膜
Low-resistivity nitrogen-doped p-type Cu2O thin films enabled by millisecond flash lamp annealing
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中文总结 AI 辅助
该研究针对低能FLA加工窗口实现低电阻率氮掺杂p型Cu₂O薄膜，通过调控FLA能量密度优化其电学性能，为相关材料的制备提供了关键工艺依据。
中文摘要 AI 辅助
闪光灯退火（FLA）提供毫秒级的热处理工艺，但其对p型Cu₂O及氮相关缺陷的影响尚不清楚。采用反应式高功率脉冲磁控溅射沉积不同氮含量的反应溅射Cu₂O:N薄膜，对其施加1次能量密度为4.9-11.7 J·cm⁻²、时长1.9 ms的FLA脉冲，评估其成分、形貌、结构、振动、电学及光学响应。WDS显示总元素组成无统计学显著变化，XRD证实立方Cu₂O得以保留。含氮薄膜出现表面粗化、Cu₂O衍射峰偏移，以及归属分子N₂的拉曼带非单调变化。氮掺入大幅降低沉积态电阻率，在4.9 J·cm⁻² FLA处理后获得0.045 Ω·cm的极低值，而更高能量密度则显著提高电阻率。霍尔测量显示迁移率增加但空穴浓度降低，高能量密度下富氮薄膜的光学带隙变宽。研究明确了对电学性能有积极作用的窄低能加工窗口，而高能FLA会改变结构与光吸收边，但劣化电导率。
英文摘要
Flash lamp annealing (FLA) provides millisecond-scale thermal processing, but its effects on p-type Cu2O and nitrogen-related defects remain poorly understood. Reactively sputtered Cu2O:N films with different nitrogen content were deposited using reactive high-power impulse magnetron sputtering and exposed to a single 1.9 ms FLA pulse at 4.9 - 11.7 J cm-2. Their compositional,morphological, structural, vibrational, electrical, and optical responses were evaluated. WDS showed no statistically significant change in total elemental composition, and XRD confirmed retention of cubic Cu2O. Nitrogen-containing films exhibited surface coarsening, shifts of the Cu2O reflections, and non-monotonic changes in the Raman band assigned to molecular N2. Nitrogen incorporation substantially reduced the as-deposited resistivity. The very low value of 0.045 Ωcm was obtained after FLA at 4.9 J cm-2, whereas higher energy densities markedly increased resistivity. Hall measurements showed increasing mobility but decreasing hole concentration. At high energy densities, the optical band gap of nitrogen-rich films widened. The results define a narrow low-energy processing window with a positive effect on electrical properties, whereas high-energy FLA modifies the structure and optical absorption edge but degrades electrical conductivity.
