反应溅射DC薄膜的带隙调谐
Band Gap Tuning of DC Reactively Sputtered ZnON Thin Films
摘要：
氮氧化锌（ZnO $_x$ N $_y$）是一种新型的具有带隙可调的半导体材料。在这项研究中，一种新的直流反应溅射协议，制备ZnO $_x$ N $_y$薄膜具有不同的元素浓度，通过精确控制工作压力。使用UV-可见光谱法对带隙进行严格分析，并通过EDAX光谱法进行补充以确定元素组成的变化。利用原子力显微镜、X射线衍射仪和拉曼光谱仪研究了薄膜的微观结构与禁带宽度的关系，并利用乌尔巴赫定理对缺陷态进行了分析。这项研究揭示了在带隙调整过程中形成的中间结构的存在，这对未来旨在开发异质结构和二维超晶格的光子学应用的研究具有重要意义。
英文摘要：
Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnO$_x$N$_y$ films with varying elemental concentrations, by precisely controlling the working pressure. The band gap was rigorously analyzed using UV-Visible spectroscopy, which was complemented by EDAX spectroscopy to determine the variations in the elemental composition. The correlation between the microstructure and band gap was investigated through the application of AFM, XRD, and Raman spectroscopy, while the Urbach theorem was used to evaluate the defect states. This study revealed the existence of intermediate structures formed during the tuning of the band gap, which can have important implications for future research aimed at developing heterostructures and 2D superlattices for photonics applications.
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