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arXiv 0909.1637cond-mat.mtrl-sci
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衬底偏压对磁控溅射BaxSr1-xTiO3薄膜结构和介电性能的影响

Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films

Tommi Riekkinen, Jan Saijets, Pasi Kostamo, Timo Sajavaara, Sebastiaan van Dijken

摘要:

在射频磁控溅射过程中施加衬底偏压改变了Sr 1-xTiO 3薄膜的晶体结构、晶粒形貌、晶格应变和成分。因此,Pt/SrTiO 3/Pt平行板电容器的介电性质显著改变。随着衬底偏压的增加,我们观察到一个明确的转变的铁电顺电相变向更高的温度,在室温下的介电常数和可调谐性的增加,和恶化的介电损耗。在很大程度上,这些变化与拉伸面内膜应变随衬底偏压的逐渐增加和膜组合物的突然变化相关。

英文摘要:

The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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