研究铁磁体的热电性质对于开发未来高效能量转换的微电子器件具有重要意义。居里温度高达$T_{\ m C}$ = 450 K、远高于室温的铁磁Mn$_5$Ge$_3$C$_x$薄膜，通过集成到CMOS异质结构中，有望用于自旋电子学应用。在本工作中，我们实验研究了在蓝宝石(11-20)衬底上磁控溅射沉积的薄膜的热电势，特别是反常能斯特效应(ANE)。随着碳含量x的增加，ANE逐渐增大，在x=0.8时达到最大值，这与先前对磁化和反常霍尔效应的研究结果一致。与母体Mn$_5$Ge$_3$化合物相比，ANE增强了三倍。然而，对于x=0.8，我们观察到计算得到的ANE与测量值存在明显偏差。
英文摘要：
Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up to $T_{\rm C}$ = 450 K well above room temperature are potential candidates for spintronic applications by integration into CMOS heterostructures. In this work, the thermoelectric power, in particular, the anomalous Nernst effect (ANE) has been investigated experimentally for magnetron sputtered thin films on sapphire (11-20) substrates. The ANE gradually increases with increasing carbon content x up to a maximum value obtained for x=0.8 in line with earlier investigations of the magnetization and anomalous Hall effect. The ANE is strongly enhanced by a factor three compared to the parent Mn$_5$Ge$_3$ compound. However, for x=0.8 we observe a clear deviation of the calculated ANE from the measured values.
We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of Ti-doped sapphire crystals with high figure-of-merit (FOM). The FOM of a given sample is defined as the ratio of the coefficient of absorption at the pump frequency to the coefficient of absorption at the working frequency of Ti:sapphire laser. It is believed that FOM is proportional to the ratio of the concentration of isolated Ti$^{3+}$ ions to the concentration…
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics. For two-dimensional (2D) materials, however, main fabrication routes have been mechanical exfoliation and chemical-vapor deposition by making good use of weak van der Waals bonding nature between neighboring layers, and MBE growth of 2D materials, in particular o…
Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown in a single run revealing single crystalline epitaxial structures with sharp interfaces as observed by applying transmission electron microscopy. The in-plane magnetization experiments have revealed separate magnetization switching of a thin top Co (soft) layer and a thick bottom Co (hard) layer. At zero magnetic field the two Co layers are found in an antip…
In this study, we implemented a finite-difference algorithm for computing anomalous Hall and Nernst conductivity. Based on the expression to evaluate the Berry curvature in an insulating system [J. Phys. Soc. Jpn. 74 1674(2005)], we extended the methods to a metallic system. We calculated anomalous Hall conductivity and Nernst conductivity in a two-dimensional ferromagnetic material FeCl$_2$ and three-dimensional ferromagnetic transition metals bcc-Fe, hcp-Co, and fcc-Ni. Our results are comparable to previously reported results computed by Kubo-formula or Wannier representation. To evaluate a…
A sizable transverse thermoelectric coefficient N , large to the extent that it potentially serves applications, is predicted to arise, by means of first-principles calculations, in a Skyrmion crystal assumed on EuO monolayer where carrier electrons are introduced upon a quantum anomalous Hall insulating phase of Chern number C = 2. This encourages future experiments to pursue such an effect.
Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001) can be transformed into Cu(111) with centimeter-sized grains. Employing optical m…
The effects of Ga+ ion irradiation and high temperature annealing on behavior of nanocrystalline graphene directly grown on quartz and sapphire are presented. It is shown that nanocrystalline graphene stands fairly high doses of ion irradiation (up to 3e14 cm-2 of 5 to 50 keV Ga+ ions) without degradation in conductance. At higher doses, nanocrystalline graphene rapidly loses its conductance and at doses over 2e15 cm-2 becomes actually insulating. Annealing in vacuum restores conductance of the irradiated nanocrystalline graphene and, if the irradiation has not exceeded a dose of 3e15 cm-2, th…
We identify and investigate thermal spin transport phenomena in sputter-deposited Pt/NiFe$_2$O$_{\textrm{4-x}}$ ($4\geq x \geq 0$) bilayers. We separate the voltage generated by the spin Seebeck effect from the anomalous Nernst effect contributions and even disentangle the intrinsic anomalous Nernst effect (ANE) in the ferromagnet (FM) from the ANE produced by the Pt that is spin polarized due to its proximity to the FM. Further, we probe the dependence of these effects on the electrical conductivity and the band gap energy of the FM film varying from nearly insulating NiFe$_2$O$_4$ to metalli…
In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) compared a film grown on sapphire (Tc=68C). We also investigated differences in the detected Raman signal for different wavelengths and polarizations of the excitation laser. We found that for either s…
In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl$_2$O$_4$ (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus…
Dirac/Weyl semimetals hosting linearly-dispersing bands have received recent attention for potential thermoelectric applications, since their ultrahigh-mobility carriers could generate large thermoelectric and Nernst power factors. To optimize these efficiencies, the Fermi energy needs to be chemically controlled in a wide range, which is generally difficult in bulk materials because of disorder effects from the substituted ions. Here it is shown that the Fermi energy is tunable across the Dirac point for layered magnet EuMnBi$_2$ by partially substituting Gd$^{3+}$ for Eu$^{2+}$ in the insula…
A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the laser spot position and external magnetic field magnitude and orientation. The local SSE effect is detected in a similar fashion by exploiting the inverse spin Hall effect in a Pt layer deposited on to…
We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature dependent electrical measurements…
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains …
The Casimir free energy of dielectric films, both free-standing in vacuum and deposited on metallic or dielectric plates, is investigated. It is shown that the values of the free energy depend considerably on whether the calculation approach used neglects or takes into account the dc conductivity of film material. We demonstrate that there are the material-dependent and universal classical limits in the former and latter cases, respectively. The analytic behavior of the Casimir free energy and entropy for a free-standing dielectric film at low temperature in found. According to our results, th…
We study the laser control of magnon topological phases induced by the Aharonov-Casher effect in insulating antiferromagnets (AFs). Since the laser electric field can be considered as a time-periodic perturbation, we apply the Floquet theory and perform the inverse frequency expansion by focusing on the high frequency region. Using the obtained effective Floquet Hamiltonian, we study nonequilibrium magnon dynamics away from the adiabatic limit and its effect on topological phenomena. We show that a linearly polarized laser can generate helical edge magnon states and induce the magnonic spin Ne…
Extending the notion of symmetry protected topological phases to insulating antiferromagnets (AFs) described in terms of opposite magnetic dipole moments associated with the magnetic N$\acute{\rm{e}} $el order, we establish a bosonic counterpart of topological insulators in semiconductors. Making use of the Aharonov-Casher effect, induced by electric field gradients, we propose a magnonic analog of the quantum spin Hall effect (magnonic QSHE) for edge states that carry helical magnons. We show that such up and down magnons form the same Landau levels and perform cyclotron motion with the same …
