离子辐照石英和蓝宝石表面纳米石墨烯
Ion Irradiation of Nanocrystalline Graphene on Quartz and Sapphire
摘要：
研究了Ga+离子辐照和高温退火对石英和蓝宝石衬底上直接生长纳米石墨烯的影响。它示出，纳米晶石墨烯站在相当高剂量的离子辐照（高达3e 14 cm-2的5至50 keV的Ga+离子），而不降低电导。在较高剂量下，纳米晶石墨烯迅速失去其电导，并且在超过2 e15 cm-2的剂量下变得实际上绝缘。在真空中退火恢复被照射的纳米晶石墨烯的电导，并且如果照射没有超过3e 15 cm-2的剂量，则该恢复可以完成。在接近1 e16 cm-2的高剂量下的离子辐照导致几层石墨烯的完全离子溅射。除了辐照诱导的电导降低和温度诱导的电导恢复之外，离子辐照的另外两个效应是增强石墨烯与衬底的粘附性和增加衬底的成核能力以用于直接沉积石墨烯。对于50 keV的Ga+离子，在超过2 e14 cm-2的辐照剂量下观察到粘附的增强。在宽剂量范围内观察到促进的石墨烯成核。结果表明，上述效应可用于开发石墨烯在绝缘衬底上的图案化方法和石墨烯的压印光刻方法。
英文摘要：
The effects of Ga+ ion irradiation and high temperature annealing on behavior of nanocrystalline graphene directly grown on quartz and sapphire are presented. It is shown that nanocrystalline graphene stands fairly high doses of ion irradiation (up to 3e14 cm-2 of 5 to 50 keV Ga+ ions) without degradation in conductance. At higher doses, nanocrystalline graphene rapidly loses its conductance and at doses over 2e15 cm-2 becomes actually insulating. Annealing in vacuum restores conductance of the irradiated nanocrystalline graphene and, if the irradiation has not exceeded a dose of 3e15 cm-2, this restoration can be complete. Ion irradiation at high doses approaching 1e16 cm-2 results in complete ion sputtering of a few layer graphene. Along with the irradiation-induced reduction of conductance and the temperature-induced restoration of conductance, two other effects of the ion irradiation are the enhancement of adhesion of graphene to substrate and the increase in the nucleation capability of substrate for direct deposition of graphene. For 50 keV Ga+ ions, the enhancement of adhesion is observed at irradiation doses over 2e14 cm-2. The promoted graphene nucleation is observed in a broad dose range. It is shown that the above effects can be used for development of methods of patterning of graphene on insulating substrates and a method of imprint lithography of graphene.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
