超导量子传感器用NbN沉积工艺的研究
Development of a NbN Deposition Process for Superconducting Quantum Sensors
摘要：
我们进行了详细的计划，以探索超导特性的反应直流磁控溅射NbN。基本原理是使用氩气点燃等离子体，然后引入少量额外的氮气流以实现Nb靶的氮化。随后的溅射导致NbN沉积到主衬底上。溅射膜的特性取决于许多参数：氩气压力，氮气流速和时间演变曲线，衬底材料等。至关重要的是，在作为氮气流量的函数的靶电压的滞后可以用来提供一个非常有效的监测反应过程中的氮气消耗。通过研究这些依赖性，我们已经能够在蓝宝石、硅上的二氧化硅和硅上的氮化硅上实现高度可再现的膜特性。通过优化氩气压力使膜内应力最小化，得到具有Tc = 14.65 K的NbN膜。在本文中，我们报告的特性，如沉积速率，残余电阻比（RRR），薄膜电阻率，转变温度，和应力，作为沉积条件的函数。为了提高我们对薄膜微波性能的理解，我们制作了各种微带NbN谐振器（半波长，四分之一波长，环形谐振器）。在本文中，我们提供了一个说明性的结果，从这项工作中显示了一个2.1097 GHz的谐振器具有15,962的Q值在3.3 K。
英文摘要：
We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.
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