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arXiv 2007.12235cond-mat.str-el
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URu $_2$ Si $_2$中类间隙行为的起源:准粒子散射谱和电阻率测量的联合研究

Origin of gap-like behaviors in URu$_2$Si$_2$: Combined study via quasiparticle scattering spectroscopy and resistivity measurements

S. Zhang, G. Chappell, N. Pouse, R. E. Baumbach, M. B. Maple, L. H. Greene, W. K. Park

摘要:

我们解决两个长期存在的问题,关于隐藏的顺序URu2Si2:它与杂交过程中,有什么不同的角色所发挥的本地化和巡回电子?我们的准粒子散射光谱揭示了一个杂交间隙无处不在的整个相空间跨越的P和Fe的替代URu2Si2,包括无序和反铁磁区域,在跨越相边界的变化极小。这表明它的开放与有序无关,因此定域电子必须是主要的参与者。为了一致的理解,所有其他的间隙一样的行为只观察到低于转变温度,我们分析了电阻率使用的模型,其中间隙玻色子激发是主要的散射源。由于它们的刚度设置为遵循不寻常的温度依赖性(随着温度的降低而降低),该模型很好地拟合了我们所有的电阻率数据,包括过渡处的跳跃。值得注意的是,提取的间隙随着Fe含量的增加而缓慢增加,类似于在Q1 =(1.4,0,0)处通过非弹性中子散射检测到的间隙,表明共同的起源。这样的模型也可以自然地解释霍尔效应的温度依赖性,而不调用费米表面间隙。

英文摘要:

We address two long-standing questions regarding the hidden order in URu2Si2: Is it associated with the hybridization process, and what are the distinct roles played by the localized and itinerant electrons? Our quasiparticle scattering spectroscopy reveals a hybridization gap ubiquitous in the entire phase space spanned by P and Fe substitutions in URu2Si2, including the no-order and antiferromagnetic regions, with minimal change upon crossing the phase boundary. This indicates its opening isn't associated with the ordering, and thus localized electrons must be the major player. Towards a consistent understanding of all the other gap-like behaviors observed only below transition temperatures, we analyze the electrical resistivity using a model in which gapped bosonic excitations are the dominant scattering source. With their stiffness set to follow an unusual temperature dependence (decreasing with decreasing temperature), this model fits all of our resistivity data well including the jump at the transition. Remarkably, the extracted gap increases slowly with increasing Fe content, similarly to the gap detected by inelastic neutron scattering at Q1 = (1.4, 0, 0), suggesting a common origin. Such a model can also naturally explain the Hall effect temperature dependence without invoking Fermi surface gapping.

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