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arXiv 1908.06182physics.ins-dethep-ex
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Measured Effectiveness of Deep N-well Substrate Isolation in a 65nm Pixel Readout Chip Prototype

Peilian Liu, Maurice Garcia-Sciveres, Timon Heim, Amanda Krieger, Dario Gnani

英文摘要:

The same charge sensitive preamplifier and discriminator circuit with different isolation strategies has been tested to compare the isolation of both analog and digital circuits from the substrate of a 65nm bulk CMOS process to the isolation of only digital circuits, tying analog ground locally to the substrate. This study will show that the circuit with analog on the substrate and digital in deep N-well has better noise isolation between analog and digital.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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