用于HL-LHC上ATLAS MDT室读出升级的ASD2芯片
The ASD2 Chip for the Upgrade of the ATLAS MDT Chamber Readout at HL-LHC
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中文总结 AI 辅助
该研究针对HL-LHC上ATLAS MDT室读出升级需求，采用130nm工艺研发ASD2前置放大器，其性能优于500nm工艺的ASD1，且经测试具备良好环境耐受性，已完成多阶段流片及量产验证。
中文摘要 AI 辅助
为在高亮度LHC（HL-LHC）运行条件下升级ATLAS探测器，需采用新的、选择性更强的触发方案，通过整合RPC触发信息来控制MDT漂移管室的读出，这要求更换MDT读出电子设备，包括容纳ASD放大器的前端板和定制设计的TDC。TDC缓存定时测量结果，传输至安装在室上的数据集中器（CSM），CSM再与MDT数据处理器通信，MDT数据处理器会将MDT跟踪数据与RPC定时信息结合，以专门识别高能μ子径迹。本文报道了新型ASD2前置放大器，讨论其架构、设计细节、功能及实测性能，还给出了多项目晶圆（MPW）流片、工程流片及8万颗量产芯片的测试结果。与当前用于MDT读出的ASD1前置放大器（采用500nm芯片工艺）不同，ASD2采用更先进的130nm工艺制造，这带来了一系列技术改进，提升了关键性能参数，如信号上升时间、噪声电平及芯片各通道阈值设置的可重复性，还给出了对比测量结果以验证该改进性能。最后，讨论了ASD2对辐射暴露及MDT漂移管内潜在高压放电等环境条件的耐受性。
英文摘要
Upgrading the ATLAS detector for operation at the High-Luminosity LHC requires a new, more se-lective trigger scheme to control the readout of MDT drift-tube chambers by incorporating RPC trigger information. This necessitates replacing the MDT readout electronics, including the front-end boards that house the ASD amplifiers and the custom-designed TDC. The latter buffers timing measurements for transmission to a chamber-mounted data concentrator (CSM), which, in turn, communicates with the MDT Data Processor, where MDT tracking data are combined with RPC timing information, to specifically identify high-energy muon tracks. In this article, we report on the new ASD2 preamplifier, discussing its architecture, design details, functionality and measured performance. We also present test results for chips from MPW runs, the engineering run and the volume production of 80,000 chips. Unlike the ASD1 preamplifier, currently used for MDT readout, which relies on 500 nm chip tech-nology, the ASD2 is manufactured using the more advanced 130 nm technology. This offers a range of technical improvements that enhance critical performance parameters such as signal rise time, noise levels, and the reproducibility of threshold settings across a chip's channels. Comparative measurements are presented to verify this improved performance. Finally, we discuss the robust-ness of ASD2 against environmental conditions like radiation exposure and potential high-voltage discharges within the MDT drift tubes.
