M. Adamus, J. Ciborowski, L. Maczewski, P. Luzniak
We present measurements of elongation and cluster charge using MIMOSA-18 MAPS pixel matrix with 10 $μ$m pixel pitch, using electron test beams of energies ranging from 15 to 500 MeV. We observe energy dependence of cluster charge and elongation for large incident angles.
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Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R\&D phase, especially for small-scale applications, such interconnect technologies need to be suitable for the assembly of single dies, typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D programme and the AIDAinnova collaboration, innovative hybridisation concepts targeting vertex-detector applications at future colliders are under development. Recent results of two novel interconnect me…
We are currently investigating the spatial resolution of highly pixelated Cadmium Zinc Telluride (CZT) detector for imaging applications. A 20 mm {\times} 20 mm {\times} 5 mm CZT substrate was fabricated with 600 μm pitch pixels (500 μm anode pixels with 100 μm gap) and coplanar cathode. Charge sharing between two pixels was studied using collimated 122 keV gamma ray source. Experiments show a resolution of 125 μm FWHM for double-pixel charge sharing events when the 600 μm pixelated and 5 mm thick CZT detector biased at -1000 V. In addition, we analyzed the energy response of the 600 μm pitch …
A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, …
Silicon tracking detectors can record the charge in each channel (analog or digitized) or have only binary readout (hit or no hit). While there is significant literature on the position resolution obtained from interpolation of charge measurements, a comprehensive study of the resolution obtainable with binary readout is lacking. It is commonly assumed that the binary resolution is $\text{pitch}/\sqrt{12}$, but this is generally a worst case upper limit. In this paper we study, using simulation, the best achievable resolution for minimum ionizing particles in binary readout pixels. A wide rang…
An innovative X-ray imaging sensor with intrinsic digital characteristics is presented. It is based on Chromatic Photon Counting technology. The detector is able to count individually the incident X-ray photons and to separate them according to their energy (two 'color' images per exposure). The energy selection occurs in real time and at radiographic imaging speed (GHz global counting rate). Photon counting, color mode and a very high spatial resolution (more than 10 l.p./mm at MTF50) allow to obtain an optimal ratio between image quality and absorbed dose. The individual block of the imaging…
Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch
本文设计并表征了一种基于150 nm CMOS工艺的单片dSiPM-IC，包含32×32像素阵列，通过12位TDC实现亚100 ps精度和3 MHz采集率，总吞吐量达4 Gbps，并全面验证了其功能与性能。
Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments. The detector requirements become extremely demanding for operation at the High-Luminosity LHC, where up to 200 interactions will overlap in the same bunch crossing on top of the process of interest. Additionally, fluences up to 2.3 10^16 cm^-2 1 MeV neutron equivalent at 3.0 cm distance from the beam are expected for an integrated luminosity of 3000 fb^-1. In …
A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.
First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC
本文在DESY测试束设施测量了RSD 450微米节距像素阵列的4D分辨率，使用FAST2 ASIC读出7像素矩阵，实现了15微米位置分辨率和60 ps时间分辨率，证明十字形电极RSD传感器是4D径迹追踪的理想选择。
We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50 micron pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in t…
Post-fabrication trimming of a 1024-pixel, single-photon counting, Microwave Kinetic Inductance Detector array with a pixel pitch of 150 micron
针对紧密排列的微波动力学电感探测器阵列，提出制造后修整方法，将频率散布降低两个数量级，良率从76%提升至94%。
A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The sensor, taped out with a 180 nm CMOS Image Sensor (CIS) process, consists of nine different pixel arrays varying in pixel pitches, diode sizes and geometries in order to study the particle detection performance of enlarged pixels. The test was carried out with a Fe-55 radioactive source. Two soft X-ray peaks observed were used to calibrate the charge to voltage f…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 50$\times$50 $μ$m$^{2}$ devices has been measured in the l…
Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R&D phase, and in general for small-scale applications, such interconnect technologies need to be suitable for the assembly of single-dies, typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D programme and the AIDAinnova collaboration, innovative hybridisation concepts targeting vertex-detector applications at future colliders are under development. This contribution presents recent result…
Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator
本文介绍FASTPIX亚纳秒CMOS像素传感器演示器的设计与测试束测量结果，通过小收集电极和多种像素设计实现全效率下低于150 ps的时间分辨率。
Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC
中科大研发超薄三维硅传感器，采用超小像素尺寸，实现单像素级位置与时间信息测量。
Development of AC-LGAD detector with finer pitch electrodes for high energy physics experiments
本文研发了面向高能物理实验的精细间距AC-LGAD探测器，通过优化参数制备了条形和像素传感器，测试表明其具备良好的信号幅度、时间与空间分辨率及探测效率。
For the ATLAS Pixel Detector fast readout electronics has been successfully developed and tested. Main attention was given to the ability to detect small charges in the order of 5,000 electrons within 25 ns in the harsh radiation environment of LHC together with the challenge to cope with the huge amount of data generated by the 80 millions channels of the Pixel detector. For the integration of the 50 micron pitch hybrid pixel detector reliable bump bonding techniques using either lead-tin or indium bumps has been developed and has been successfully tested for large scale production.
The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector concepts for the ILC vertex detector (VTX). Basic characteristics of two MAPS pixel matrices MIMOSA-5 (17 $μ$m pixel pitch) and MIMOSA-18 (10 $μ$m pixel pitch) are studied and compared (pedestals, noises, calibration of the ADC-to-electron conversion gain, detector efficiency and charge collection properties). The e+e- collisions at the ILC will be accompanied by i…
Cadmium Zinc Telluride and Cadmium Telluride are the detector materials of choice for the detection of X-rays in the X-ray energy band E >= 5keV with excellent spatial and spectral resolution and without cryogenic cooling. Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolution between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of X-ray telescopes will require pixelated X-ray detectors with pixels on a grid with a…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $μ$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $μ$A and at a sensor bias voltage of 160 V. The ASIC was also characteri…
Pixel detector hybridization and integration with anisotropic conductive adhesives
针对混合像素探测器开发，提出基于各向异性导电胶和化学镀镍浸金的单芯片互连工艺，经多种尺寸验证，优化后提升电镀均匀性与互连良率。
In the past 20 years the search for neutrinoless double beta decay has driven many developements in all kind of detector technology. A new branch in this field are highly-pixelated semiconductor detectors - such as the CdTe-Timepix detectors. It compromises a cadmium-telluride sensor of 14 mm x 14 mm x 1 mm size with an ASIC which has 256 x 256 pixel of 55 \textmu m pixel pitch and can be used to obtain either spectroscopic or timing information in every pixel. In regular operation it can provide a 2D projection of particle trajectories; however, three dimensional trajectories are desirable fo…
\textit{Topmetal-${II}^-$} is a low noise CMOS pixel direct charge sensor with a pitch of 83$μm$. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build a detector with high spatial resolution. In our experiments, an epoxy adhesive is used as the conductive medium to connect the sensor and Cadmium Zinc Telluride (CdZnTe). The diffusion coefficient and charge efficiency of electrons are measured at a low bias voltage of -2 Volts, and the image of a single alpha is clear with a reasonable spatial resolution. The …
Characterisation of analogue MAPS fabricated in 65 nm technology for the ALICE ITS3
针对ALICE实验顶点探测器性能提升需求，研究了65 nm工艺模拟MAPS的特性，验证其满足ALICE ITS3要求，同时为FCC-ee顶点探测器应用提供了可行性支撑。
Significant progress has been made to develop silicon pixel technologies for use in the vertex and tracker regions of the proposed Compact Linear Collider (CLIC) detector design. The electron-positron collisions generated by this linear accelerator provide a clean, low-radiation environment for the inner detectors. However, physics-driven performance targets, the CLIC beam structure, and occupancies from beam-induced backgrounds place challenging requirements on detector technologies for this region. A pixel pitch down to 25 x 25$μ$m$^{-2}$, material budget $\leq$ 0.2-2$\%X_0$ per layer, avera…
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. The studied parameters include: reverse substrate bias, epitaxial layer thickness, charge colle…
Hybrid pixel sensor technology such as the Medipix3 represents a unique tool for electron imaging. We have investigated its performance as a direct imaging detector using a Transmission Electron Microscope (TEM) which incorporated a Medipix3 detector with a 300 micrometre thick silicon layer compromising of 256x256 pixels at 55 micrometre pixel pitch. We present results taken with the Medipix3 in Single Pixel Mode (SPM) with electron beam energies in the range, 60 to 200 keV. Measurements of the Modulation Transfer Function (MTF) and the Detective Quantum Efficiency (DQE) were investigated. At…
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the buildi…
Wavelength-dispersive spectrometers (WDS) are often used in synchrotron and FEL applications where high energy resolution (in the order of eV) is important. Increasing WDS energy resolution requires increasing spatial resolution of the detectors in the dispersion direction. The common approaches with strip detectors or small pixel detectors are not ideal. We present a novel approach, with a sensor using rectangular pixels with a high aspect ratio (between strips and pixels, further called "strixels"), and strixel redistribution to match the square pixel arrays of typical ASICs while avoiding t…
Performance studies of the CE-65v2 MAPS prototype structure
面向ALICE ITS3升级需求，研究人员开发了65nm工艺的CE-65v2 MAPS测试结构，经CERN SPS试验束测试，其击中效率超99%，空间分辨率最高可达3μm以下，还可开展像素内性能分布研究。
The physics aims at the proposed future CLIC high-energy linear $e^+ e^-$ collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements with robustness against the expected high rates of beam-induced backgrounds. A spatial resolution of a few microns and a material budget down to 0.2\% of a radiation length per vertex-detector layer have to be achieved together with a few nanoseconds time stamping accuracy. These requirements are addressed with innovative technologies in an ambitious detector …
Pixel detectors only record signals above a tuned threshold in order to suppress noise. As sensors become thinner, pitches decrease, and radiation damage reduces the collected charge, it is increasingly desirable to lower thresholds. By making the simple, but powerful observation that hit pixels tend to be spatially close to each other, we introduce a scheme for dynamic thresholds. This dynamic scheme can enhance the signal efficiency without significantly increasing the occupancy. In addition to presenting a selection of empirical results, we also discuss some potential methods for implementi…
We describe a UV photo-detector with single photon(electron) counting and imaging capability. It is based on a CsI photocathode, a GEM charge multiplier and a self triggering CMOS analog pixel chip with 105k pixels at 50 micron pitch. The single photoelectron produced by the absorption of a UV photon is drifted to and multiplied inside a single GEM hole. The coordinates of the GEM avalanche are reconstructed with high accuracy (4 micron rms) by the pixel chip. As a result the map of the GEM holes, arranged on a triangular pattern at 50micron pitch, is finely imaged.
20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
本文提出MONOLITH项目第二款无内部增益层的单片硅像素探测器原型，通过优化传感器与SiGe HBT前端电子学的时间性能，在130 V偏置平台下实现99.8%效率和20 ps时间分辨率。
This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chip, BUSARD-A, takes advantage of this buried diffusion as an ionizing particle sensor. It includes a small array of 13$\times$13 pixels, with a pitch of $80\,μ$m, and each pixel has one buried diffusio…
When an X-ray photon lands into a pixel (event pixel), the primary charge is mainly collected into the event pixel. If the X-ray landing position is sufficiently close to the pixel boundary, the primary charge spills over to the adjacent pixel forming split events. We can easily understand that there are three parameters coupled together; the X-ray landing position inside the pixel, the X-ray event pattern and the primary charge cloud shape. We can determine any one of them from the other two parameters. Since we know the charge cloud shape using the multi-pitch mesh experiment, we can calcula…
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
Improved Pixel-wise Calibration for Charge-Integrating Hybrid Pixel Detectors with Performance Validation
针对MÖNCH混合像素探测器，提出基于背面脉冲技术的逐像素增益与非线性校准方法，生成三维查找表映射响应，显著提升了能量与空间分辨率，并实现坏像素诊断与凸点键合良率估计。
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time re…
Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 $μ$m thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of $14\times10^{15}$ n$_{eq}$/cm$^2$. The charge collection and tracking efficiency of the …
High Density Hybridisation Using ENIG Bumping and Anisotropic Conductive Films
本研究针对传统凸点键合成本高、单芯片应用难的问题，提出结合自研ENIG凸点与ACF键合的倒装芯片混合互连技术，验证了55μm功能器件与25μm测试结构的可行性，并开发仿真程序优化界面几何结构，为高密度互连提供低成本可扩展方案。
Using industrial standard 0.35μm CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud distribution. The first version, Topmetal-I, features a 64x64 pixel array of 80μm pitch size. Direct charge calibration reveals an average capacitance of 210fF per pixel. The charge collection noise is near the thermal noise limit. With the readout, individual pixel channels exhibit a most probable equivalent noise charge of 330e-.
Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
本文研究了180 nm CMOS工艺下大规模DMAPS芯片TJ-Monopix2的串扰问题，通过实验室测量和阈值变化分析，评估其在高能物理实验中的高辐射环境下的性能表现。。
The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial $180$ nm HV-CMOS process and contains a matrix of $128\times128$ square pixels with $25$ $μ$m pitch. First prototypes have been produced with a standard resistivity of $\sim20$ $Ω$cm for the substrate and tested in standalone mode.…
We report on the results of a new, sealed, Gas Pixel Detector. The very compact design and the absence of the gas flow system, make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 micron wide, hexagonal cells)…
Optimizing Charge Transport Simulation for Hybrid Pixel Detectors
针对MÖNCH混合像素探测器模拟与测量不一致的问题，本文通过蒙特卡罗模拟优化电荷输运建模，引入电荷排斥后显著提升了模拟与X射线测量结果的一致性。
Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
本研究对Horizon 2020 MONOLITH项目的带内部增益层SiGe BiCMOS单片硅像素ASIC原型开展试验束测试，验证了其高探测效率与优异时间分辨率，为高性能像素探测提供了技术支撑。
Enhanced micrometre spatial resolution and usable photon flux for hybrid pixel detectors via deep-learning-based X-ray localization
该研究针对MÖNCH混合像素探测器，采用深度学习模型定位X射线单光子与堆积事件，提升了空间分辨率与可用光子通量，在刃边测量中实现了更优的分辨率与更高的重建效率。
Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser
本研究利用飞秒激光评估MONOLITH项目单片硅像素探测器的时间分辨率，在2.7 W/cm2功率下对1200和11k电子信号分别测得45 ps和3 ps，并与束流测试对比分析电荷收集抖动。
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex detector is justified for the ILC. To achieve a point(spatial single layer) resolution below the one-μm range while improving other characteristics (radiation tolerance and eventually time resolution) we will need the use of 1-micron pitch pixels. Therefore, we propose a single MOS transistor that acts as an amplifying device and a detector with a buried charge-co…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\ti…
The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 μm. In Topmetal-M, a novel charge collection method combing the Monolithic Active Pixel Sensor (MAPS) and the Topmetal sensor has been proposed for the first time. Both the ionized charge deposited by the particle in the sensor and along the track over the sensor can be collected. The in-pixel circuit mainly consists of a low-noise charge sensitive amplifier to establish the signal for the e…
The spectrum of laser-plasma generated X-rays is very important, it characterizes electron dynamics in plasma and is basic for applications. However, the accuracies and efficiencies of existing methods to diagnose the spectrum of laser-plasma based X-ray pulse are not very high, especially in the range of several hundred keV. In this study, a new method based on electron tracks detection to measure the spectrum of laser-plasma produced X-ray pulses is proposed and demonstrated. Laser-plasma generated X-rays are scattered in a multi-pixel silicon tracker. Energies and scattering directions of C…
The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is spu…
Position resolution is a key property of the innermost layer of the upgraded ATLAS and CMS pixel detectors for determining track reconstruction and flavor tagging performance. The 11 GeV electron beam at the SLAC End Station A was used to measure the position resolution of RD53A modules with a $50\times50$ and a $25\times100\ μ$m$^2$ pitch. Tracks are reconstructed from hits on telescope planes using the EUTelescope package. The position resolution is extracted by comparing the extrapolated track and the hit position on the RD53A modules, correcting for the tracking resolution. 10.9 and 6.8 $μ…
Development of Segmented 4H-SiC LGADs
本文研究了4H-SiC LGADs分段器件的设计、制造和初步表征，通过多通道隔离策略实现了高精度粒子检测。
Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
本研究对MONOLITH项目的SiGe BiCMOS单片硅像素ASIC原型开展辐照试验与束流测试，测量了不同偏压下探测效率、时间分辨率随质子注量的变化，验证了提升偏压可改善辐照后器件性能。
In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the individual pixel to the external electronics chain. For this reason a custom CMOS array of 2101 active pixels with 80 micron pitch, directly used as the charge collecting anode of a GEM amplifying structure, has been developed and built. Each charge collecting pad, hexagonally shaped, realized using the top metal layer of a deep submicron VLSI technology is individ…
Spatial resolution for gamma ray interactions in stacks of monolithic silicon sensors
研究用于核医学的康普顿成像中像素大小对空间分辨率的影响，采用两种算法评估，经蒙特卡罗模拟，发现100μm左右像素尺寸可实现几十微米量级空间分辨率。
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