BUSARD芯片的X射线表征：在埋氧层下具有像素传感器的HV-SOI单片粒子探测器
X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide
摘要：
本文介绍了一种用于电离粒子探测的专用集成电路（ASIC）BUSARD的设计。ASIC是一种单片有源像素传感器，采用高压绝缘体上硅（HV-SOI）工艺制造，该工艺允许在掩埋氧化物（BOX）下方制造掩埋N+扩散作为标准工艺步骤。芯片的第一个版本BUSARD-A利用这种掩埋扩散作为电离粒子传感器。它包括一个13个$\times$ 13像素的小阵列，间距为$80\,μ$ m，每个像素具有一个带有电荷放大器的埋置扩散区，具有偏移调谐和数字处理。探测器具有多种操作模式，包括粒子计数和超阈值时间（ToT）。进行探测器的初始X射线表征，获得若干脉冲高度和ToT谱，然后将其用于执行装置的能量校准。钼$\mathbf{K_α}$发射通过使用模拟脉冲输出测量ENC的标准偏差为$127\,e^{-}$，通过使用ToT数字输出测量ENC的标准偏差为$276\,e^{-}$。ToT模式下的分辨率由像素间的变化决定。
英文摘要：
This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chip, BUSARD-A, takes advantage of this buried diffusion as an ionizing particle sensor. It includes a small array of 13$\times$13 pixels, with a pitch of $80\,μ$m, and each pixel has one buried diffusion with a charge amplifier, discriminator with offset tuning and digital processing. The detector has several operation modes including particle counting and Time-over-Threshold (ToT). An initial X-ray characterization of the detector was carried out, obtaining several pulse height and ToT spectra, which then were used to perform the energy calibration of the device. The Molybdenum $\mathbf{K_α}$ emission was measured with a standard deviation of $127\,e^{-}$ of ENC by using the analog pulse output, and with $276\,e^{-}$ of ENC by using the ToT digital output. The resolution in ToT mode is dominated by the pixel-to-pixel variation.
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