Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105k pixels at 50 micron pitch
R. Bellazzini, G. Spandre, M. Minuti, L. Baldini, A. Brez, F. Cavalca, L. Latronico, N. Omodei, M. M. Massai, C. Sgro, E. Costa, P. Soffitta F. Krummenacher, R. DeOliveira
备注：
14 pages, 18 figures, to be submitted to Nuclear Instruments and methode A
我们报告了一个大的有效面积（15 × 15 mm ~ 2），高通道密度（470像素/mm ~ 2），自触发CMOS模拟芯片，我们已经开发的像素化的电荷收集电极的微图案气体检测器。该器件在尺寸和性能方面都向前迈出了一大步，是复杂性不断增加的三代定制ASIC的最后一个版本。CMOS像素阵列具有以50微米间距在105600个六边形像素的矩阵中图案化的顶部金属层。每个像素都直接连接到下面的完整电子链，该电子链已在0.18微米VLSI技术的剩余五个金属层和两个多晶硅层中实现。该芯片具有可定制的自触发能力，并包括用于事件坐标自动定位的信号预处理功能。以这种方式，可以通过将信号输出仅限于属于感兴趣区域的那些像素来显著减少读出时间和数据量。非常小的像素面积和深亚微米CMOS技术的使用使噪声降低到50电子ENC。从这个设备的深度测试时，耦合到一个细间距（50微米的三角形图案）气体电子倍增器的结果。读出和气体放大间距的匹配允许获得最佳结果。讨论了该探测器在天文X射线偏振测量中的应用。实验探测器响应偏振和非偏振X射线辐射时，与两种气体混合物和两种不同的光子能量的工作示出。从一个完整的蒙特卡罗模拟几个银河系和河外atronomic源的结果也有报道。
英文摘要：
We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50 micron pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and two poly-silicon layers of a 0.18 micron VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The very small pixel area and the use of a deep sub-micron CMOS technology has brought the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50 micron on a triangular pattern) Gas Electron Multiplier are presented. The matching of readout and gas amplification pitch allows to get optimal results. The application of this detector for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown. Results from a full MonteCarlo simulation for several galactic and extragalactic atronomical sources are also reported.
A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The sensor, taped out with a 180 nm CMOS Image Sensor (CIS) process, consists of nine different pixel arrays varying in pixel pitches, diode sizes and geometries in order to study the particle detection performance of enlarged pixels. The test was carried out with a Fe-55 radioactive source. Two soft X-ray peaks observed were used to calibrate the charge to voltage f…
We present the first characterization results of Timespot1, an ASIC designed in CMOS 28 nm technology, featuring a $32 \times 32$ pixel matrix with a pitch of $55 ~ μm$. Timespot1 is the first small-size prototype, conceived to readout fine-pitch pixels with single-hit time resolution below $50 ~ ps_\text{rms}$ and input rates of several hundreds of kilohertz per pixel. Such experimental conditions will be typical of the next generation of high-luminosity collider experiments, from the LHC run5 and beyond. Each pixel of the ASIC includes a charge amplifier, a discriminator, and a Time-to-Digit…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\ti…
The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial $180$ nm HV-CMOS process and contains a matrix of $128\times128$ square pixels with $25$ $μ$m pitch. First prototypes have been produced with a standard resistivity of $\sim20$ $Ω$cm for the substrate and tested in standalone mode.…
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a continuous n-type implant for full lateral depletion, and the second with a segmentation in the n-type implant for accelerated charge collection. Moreover, CLICTD features an innovative sub-pixel segmentation scheme that allows the digital footprint to be reduced while maintaining a small sub-pixel pitch. In this contribution, test-beam measurements for the …
We present the design and the absolute calibration of charged particle high-repetition-rate online readout CMOS system tailored for high-power laser experiments. This system equips a Thomson parabola (TP) spectrometer, used at the Apollon petawatt scale laser facility to measure the spectra of protons produced by high-intensity laser-target interactions. The RadEye1 CMOS matrixes array detectors are paired with a custom triggering system for image grabbing. This allows us to register the proton and ion signals remotely at a high-repetition-rate. The latter is presently of one shot/min, but the…
Electron tracking based Compton imaging is a key technique to improve the sensitivity of Compton cameras by measuring the initial direction of recoiled electrons. To realize this technique in semiconductor Compton cameras, we propose a new detector concept, Si-CMOS hybrid detector. It is a Si detector bump-bonded to a CMOS readout integrated circuit to obtain electron trajectory images. To acquire the energy and the event timing, signals from N-side are also read out in this concept. By using an ASIC for the N-side readout, the timing resolution of few us is achieved. In this paper, we present…
The physics aims at the proposed future CLIC high-energy linear $e^+ e^-$ collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements with robustness against the expected high rates of beam-induced backgrounds. A spatial resolution of a few microns and a material budget down to 0.2\% of a radiation length per vertex-detector layer have to be achieved together with a few nanoseconds time stamping accuracy. These requirements are addressed with innovative technologies in an ambitious detector …
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex detector is justified for the ILC. To achieve a point(spatial single layer) resolution below the one-μm range while improving other characteristics (radiation tolerance and eventually time resolution) we will need the use of 1-micron pitch pixels. Therefore, we propose a single MOS transistor that acts as an amplifying device and a detector with a buried charge-co…
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. The studied parameters include: reverse substrate bias, epitaxial layer thickness, charge colle…
We present the evolutions of the C-BLUE One family of cameras (formerly introduced as C-MORE), a laser guide star oriented wavefront sensor camera family. Within the Opticon WP2 european funded project, which has been set to develop LGS cameras, fast path solutions based on existing sensors had to be explored to provide working-proven cameras to ELT projects ready for the first light schedule. Result of this study, C-BLUE One is a CMOS based camera with 1600x1100 pixels (9um pitch) and 481 FPS refresh rate. It has been developed to answer most of the needs of future laser based adaptive optics…
Chromatic X-Ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC
提出了一种具有数字特性的新型X射线成像传感器。它基于彩色光子计数技术。探测器能够单独计数入射的X射线光子，并根据它们的能量将它们分离（每次曝光两个“彩色”图像）。能量选择以射线照相成像速度（GHz全局计数率）实时进行。光子计数、彩色模式和极高的空间分辨率（超过10 l. p./ mm，MTF 50）允许获得图像质量和吸收剂量之间的最佳比率。成像系统的单独块是由薄像素化CdTe晶体（传感器）耦合到大面积VLSI CMOS像素ASIC制成的双面可对接半导体辐射检测器。已建成1、2、4、8个瓦片单元。8块单元具有25 cm x 2.5cm的敏感区域。结果和图像从深入测试的几种配置的系统。X射线成像系统是PIXIRAD成像计数器s.r.l.的技术平台，最近成立的INFN分拆公司。
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion de…
The physics aims at the proposed future high-energy linear $e^+e^-$ collider CLIC pose challenging demands on the performance of the detector system. In particular, the vertex and tracking detectors have to combine a spatial resolution of a few micrometres and a low material budget with a time-stamping accuracy of a few nanoseconds. For the vertex detector, fine-pitch sensors, dedicated 65nm readout ASICs, fine-pitch bonding techniques using solder bumps or anisotropic conductive films as well as monolithic devices based on Silicon-On-Insulator technology are explored. Fully monolithic CMOS se…
In this paper, a low-noise CMOS image sensor with enhanced dynamic range (DR), using an in-pixel chopping technique, is presented. The proposed in-pixel chopping technique is used to reduce the low-frequency or 1/f noise of the source follower (SF) in an active pixel sensor (APS), which is a major component of the temporal noise. A conventional 3T active pixel, with n-well/p-sub photodiode (PD), is modified to implement a chopper inside a pixel. A single minimum sized nMOS transistor is used in each pixel, without much compromising in the fill-factor (FF). Using chopping action the low-frequen…
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel fl…
IDeF-X HD is a 32-channel analog front-end with self-triggering capability optimized for the readout of 16 x 16 pixels CdTe or CdZnTe pixelated detectors to build low power micro gamma camera. IDeF-X HD has been designed in the standard AMS CMOS 0.35 microns process technology. Its power consumption is 800 micro watt per channel. The dynamic range of the ASIC can be extended to 1.1 MeV thanks to the in-channel adjustable gain stage. When no detector is connected to the chip and without input current, a 33 electrons rms ENC level is achieved after shaping with 10.7 micro seconds peak time. Spec…
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, di…
The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders
Nikhef National Institute for Subatomic Physics（荷兰国家亚原子物理研究所）；MBI - Marietta Blau Institute for Particle Physics of the Austrian Academy of Sciences（奥地利科学院玛丽埃塔·布劳粒子物理研究所）；Institute for High Energy Physics (IFAE), Autonomous University of Barcelona (UAB)（巴塞罗那自治大学高能物理研究所）；Instituto de Física Corpuscular (IFIC), CSIC-UV.（西班牙高等科学研究理事会-瓦伦西亚大学核物理研究所）；Dept. of Electronic Engineering, School of Engineering at University of Sevilla（塞维利亚大学工程学院电子工程系）；Department of Physics, University of Liverpool（利物浦大学物理系）；Physikalisches Institut, Rheinische Friedrich-Wilhelms-Universitaet Bonn（波恩大学物理研究所）
Optical readout of GEM based devices by means of high granularity and low noise CMOS sensors allows to obtain very interesting tracking performance. Space resolution of the order of tens of $μ$m were measured on the GEM plane along with an energy resolution of 20%$÷$30%. The main limitation of CMOS sensors is represented by their poor information about time structure of the event. In this paper, the use of a concurrent light readout by means of a suitable photomultiplier and the acquisition of the electric signal induced on the GEM electrode are exploited to provide the necessary timing inform…
Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology
European Organisation for Nuclear Research (CERN)（欧洲核子研究组织）；University of Torino（都灵大学）；INFN, Sezione di Torino（意大利国家核物理研究所都灵分部）；INFN, Sezione di Trieste（意大利国家核物理研究所的里雅斯特分部）；University of Bari（巴里大学）；INFN, Sezione di Bari（意大利国家核物理研究所巴里分部）；Polytechnic of Bari（巴里理工大学）；University of Trieste（的里雅斯特大学）
Upgrade of the Belle II Vertex Detector with Depleted Monolithic CMOS Active Pixel Sensors
Marietta Blau Institute for Particle Physics, Austrian Academy of Sciences（玛丽亚·布劳粒子物理研究所，奥地利科学院）；Department of Engineering and Applied Sciences, University of Bergamo（贝加莫大学工程与应用科学学院）；Department of Electrical, Computer and Biomedical Engineering, University of Pavia（帕维亚大学电气、计算机和生物医学工程系）；Dipartimento di Fisica “E. Fermi”, Università di Pisa（比萨大学“E. 费米”物理系）；INFN Sezione di Pisa（意大利国家核物理研究所比萨分部）；Aix Marseille Univ, CNRS IN2P3, CPPM（艾克斯-马赛大学，法国国家科学研究中心，法国国家核物理与粒子物理研究所，普罗旺斯粒子物理中心）；Laboratoire de Physique des 2 infinis Irène Joliot-Curie – IJCLab, Université Paris-Saclay, CNRS IN2P3（巴黎-萨克雷大学，法国国家科学研究中心，法国国家核物理与粒子物理研究所，伊雷娜·约里奥-居里双无限物理实验室）；Université de Strasbourg, CNRS, IPHC UMR 7178（斯特拉斯堡大学，法国国家科学研究中心，高能物理研究所）；Physikalisches Institut, Rheinische（莱茵（威斯特法伦）联邦工业大学物理学院）
Belle II实验为应对更高的亮度，计划升级顶点探测器，采用耗尽单片主动像素传感器，设计高辐射容忍度和低功耗性能。
Significant progress has been made to develop silicon pixel technologies for use in the vertex and tracker regions of the proposed Compact Linear Collider (CLIC) detector design. The electron-positron collisions generated by this linear accelerator provide a clean, low-radiation environment for the inner detectors. However, physics-driven performance targets, the CLIC beam structure, and occupancies from beam-induced backgrounds place challenging requirements on detector technologies for this region. A pixel pitch down to 25 x 25$μ$m$^{-2}$, material budget $\leq$ 0.2-2$\%X_0$ per layer, avera…
\textit{Topmetal-${II}^-$} is a low noise CMOS pixel direct charge sensor with a pitch of 83$μm$. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build a detector with high spatial resolution. In our experiments, an epoxy adhesive is used as the conductive medium to connect the sensor and Cadmium Zinc Telluride (CdZnTe). The diffusion coefficient and charge efficiency of electrons are measured at a low bias voltage of -2 Volts, and the image of a single alpha is clear with a reasonable spatial resolution. The …
Beam Test Performance of AstroPix sensor with 120 GeV protons
Argonne National Laboratory（阿贡国家实验室）；NASA Goddard Space Flight Center（美国宇航局戈达德太空飞行中心）；Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院）；Oak Ridge National Laboratory（橡树岭国家实验室）
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to…
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometrie…
The hit combinatorial problem is a main challenge for track reconstruction and triggering at high rate experiments. At hadron colliders the dominant fraction of hits is due to low momentum tracks for which multiple scattering (MS) effects dominate the hit resolution. MS is also the dominating source for hit confusion and track uncertainties in low energy precision experiments. In all such environments, where MS dominates, track reconstruction and fitting can be largely simplified by using three-dimensional (3D) hit-triplets as provided by pixel detectors. This simplification is possible since …
The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 μm. In Topmetal-M, a novel charge collection method combing the Monolithic Active Pixel Sensor (MAPS) and the Topmetal sensor has been proposed for the first time. Both the ionized charge deposited by the particle in the sensor and along the track over the sensor can be collected. The in-pixel circuit mainly consists of a low-noise charge sensitive amplifier to establish the signal for the e…
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the buildi…
Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 $μ$m thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of $14\times10^{15}$ n$_{eq}$/cm$^2$. The charge collection and tracking efficiency of the …
Characterization of a 28 nm $\textit{smartpixels}$ ASIC With On-Chip ML for Particle Tracking Detectors
Fermi National Accelerator Laboratory（费米国家加速器实验室）；University of Illinois Chicago（伊利诺伊大学芝加哥分校）；The University of Chicago（芝加哥大学）；Northwestern University（西北大学）；Politecnico di Milano（米兰理工大学）；INFN, Sezione di Milano（意大利国家核物理研究所米兰分部）；Purdue University（普渡大学）；Cornell University（康奈尔大学）
